STUDY ON THERMALLY STABLE HETEROJUNCTION OHMIC CONTACTS TO GaAs

GaAs热稳定异质结欧姆接触研究

• 批准号: 63550228
• 负责人: ISHIWARA Hiroshi
• 金额: $ 1.54万
• 依托单位: TOKYO INSTITUTE OF TECHNOLOGY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1988
• 资助国家: 日本
• 起止时间: 1988 至 1989
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-63550228/
• 关键词: GaAs; OHMIC CONTACT; HETEROSTRUCTURE; SOLID PHASE EPITAXY; GERMANIUM; SILICON; RAPID THERMAL ANNEALING; オーミックコンタクト; ヘテロ接合; 炭化シリコン; プラズマ化学気相堆積法

In order to obtain thermally stable Ohmic contacts to GaAs, Ge/GaAs and Si/GaAs heterostructure were studied experimentally. Main results obtained are summarized as follows.1) It is possible to obtain Ohmic contacts using vacuum-deposition of Ge or Si films on chemically cleaned GaAs substrates and subsequently by changing them in n-type materials using ion implantation and furnace annealing.2) In case of the Ge/GaAs system, two-step annealing composed of low and high temperature annealings is effective in crystallizing the Ge films in single crystal. On the other hand, Si films on GaAs tend to become polycrystalline even after the same heat treatment.3) Good Ohmic characteristics are more easily obtained in the Si/GaAs structure than the Ge/GaAs structure. This difference is considered due to the different behavior of diffused Si and Ge atoms in GaAs. That is, Si atoms in GaAs act as donors and increase the carrier concentration near the surface, while Ge atoms act as acceptors and decrease it.4) Rapid thermal annealing to the Si/GaAs system is effective to obtain good Ohmic contacts. Particularly, the combination of rapid thermal annealing and implantation of Si ions in the Si/GaAs interface is useful to decrease contact resistance.5) From fabrication of test devices, it has been shown that the Si/GaAs heterostructure is good enough to apply to the actual devices.

为了获得GaAs的热稳定欧姆接触，对Ge/GaAs和Si/GaAs异质结构进行了实验研究。获得的主要结果总结如下。1) 通过在化学清洁的 GaAs 衬底上真空沉积 Ge 或 Si 薄膜，然后使用离子注入和炉退火将其改变为 n 型材料，可以获得欧姆接触。2)在Ge/GaAs系统的情况下，由低温和高温退火组成的两步​​退火对于使Ge薄膜结晶为单晶是有效的。另一方面，即使在相同的热处理之后，GaAs上的Si膜也倾向于变成多晶。3)Si/GaAs结构比Ge/GaAs结构更容易获得良好的欧姆特性。这种差异被认为是由于 GaAs 中扩散的 Si 和 Ge 原子的不同行为造成的。也就是说，GaAs中的Si原子充当施主并增加表面附近的载流子浓度，而Ge原子充当受主并降低其浓度。4）Si/GaAs系统的快速热退火对于获得良好的欧姆接触是有效的。特别是，快速热退火和 Si/GaAs 界面中 Si 离子注入的结合对于降低接触电阻非常有用。5) 从测试器件的制造来看，Si/GaAs 异质结构足以应用于实际设备。

项目成果

T.Asano,H.Ishiwara,and S.Furukawa: "Heteroepitaxial growth of GaAs films on SaF_2/Si(511) structures prepared with rapid thermal annealing" Japanese Journal of Applied Physics. 28. 1784-1788 (1989)

T.Asano、H.Ishiwara 和 S.Furukawa：“通过快速热退火制备的 SaF_2/Si(511) 结构上 GaAs 薄膜的异质外延生长”《日本应用物理学杂志》。

T.Asano, T.Fukada, S.Furukawa, and H.Ishiwara: "A new thermostable Ohmic contact to n-GaAs" Extended Abstracts of 19th Conf. on Solid State Devices and Materials, Tokyo, pp.67-70 (1987).

T.Asano、T.Fukada、S.Furukawa 和 H.Ishiwara：“一种新的 n-GaAs 热稳定欧姆接触”第 19 届会议的扩展摘要。

T.Fukada, T.Asano, S.Furukawa, and H.Ishiwara: "Formation of Ohmic contacts to n-GaAs by solid phase epitaxy of evaporated and ion implanted Ge films" Jpn. J. Appl. Phys., Vol.26, pp.117-121 (1987).

T.Fukada、T.Asano、S.Furukawa 和 H.Ishiwara：“通过蒸发和离子注入 Ge 薄膜的固相外延形成与 n-GaAs 的欧姆接触”Jpn。

T.Asano: Proceedings of 2nd International Conference on Amorphous and Crystalline Silicon Carbide. (1989)

T.Asano：第二届非晶和结晶碳化硅国际会议论文集。

S.Furukawa and T.Asano: "Ion assisted processing for formation of GaAs Ohmic contacts" Proc. 12th Intern. Symp. of Hosei Univ. "Application of Ion Beams in Materials Science", Tokyo, pp.57-65 (1987).

S.Furukawa 和 T.Asano：“离子辅助处理形成 GaAs 欧姆接触”Proc。