Studies on Semiconductor Quantum Wells and Long-Wavelength Infrared Lasers

半导体量子阱与长波红外激光器研究

• 批准号: 12650309
• 负责人: ISHIDA Akihiro
• 金额: $ 2.37万
• 依托单位: Shizuoka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650309/
• 关键词: Quantum well; Cascade laser; IV-VI semiconductor; Nitride; AlN; Mid infrared; Intersubband; PIEZO; AlN; 窒化物半導体; 中赤外線レーザ; 量子カスケード; 超格子; A1N; PbSnTe; 赤外線レーザ; 発光素子; サブバンド間発光

We studied IV-VI semiconductor films and quantum wells for interband mid-infrared laser applications, and AlGaN-based quantum wells for intersubband quantum-cascade laser applications. In IV-VI semiconductors, we prepared PbSrS/PbS lasers for 3-4μm region and PbCaTe/PbTe lasers for 4-6μm region, and obtained pulsed laser operation up to 235K in the PbCaTe/PbTe MQW laser. We also studied PbSnCaTe films and PbSnCaTe/PbSnTe superlattices for longer wavelength laser applications around 6-20μm. The heterojunction becomes type-I which is useful for effective confinements of electrons and holes in the PbSnTe active layer. In the AlGaN system for intersubband laser applications, we prepared high quality AlGaN based films and superlattices by hot wall epitaxy. We proposed (AlN)_1/(GaN)_n short-period superlattices consisting of one atomic layer AlN and around 10 atomic layers of GaN for mid-infrared intersubband lasers, and also proposed [(AlN)_1/(GaN)_<n1>]_m/(AlN)_<n2> quantum cascade structures which utilize large polarization fields in the AlN/GaN to inject electrons into higher subbands. We prepared the short-period superlattices and the quantum-cascade structures by hot wall epitaxy and well-controlled structures were confirmed by X-ray diffraction and TEM measurements.

我们研究了IV-VI半导体膜Forls Forls Forls中红外激光应用TUM-CASCADE激光应用。 PBCATE/PBTE MQW激光器的激光运行最多可用于较长的波长激光应用。基于热墙外观的胶片和超晶格。 <n1>] _ m/（aln）_ <n2>量子级联结构，这些结构在ALN/GAN中向电子中的大极化场进入较高的子带，并通过热壁外观和控制良好的结构进行量子级别。通过X射线衍射和TEM测量确认。

项目成果

A.Ishida, T.Ose, H.Nagasawa, Y.Inoue, H.Tatsuoka, H.Fujiyasu, H.J.Ko, H.Makino, T.Yao, H.Kan: "Characterization of AlN/GaN Quantum Cascade Structures Prepared by Hot-Wall Epitaxy"Phys. Stat. Sol. (c). 0・1. 520-523 (2002)

A.Ishida、T.Ose、H.Nagasawa、Y.Inoue、H.Tatsuoka、H.Fujiyasu、H.J.Ko、H.Makino、T.Yao、H.Kan：“AlN/GaN 量子级联结构的表征热壁外延“Phys. Stat. Sol. (c). 0・1. 520-523 (2002)

A.Ishida, T.Ose, H.Nagasawa, K.Ishino, Y.Inoue, H.Fujiyasu: "Quantum-Cascade Structure in A1N/GaN System Assisted by Piezo-Electric Effect"Jpn.J.Appl.Phys.Part2,. 41・3A. 236-238 (2002)

A.Ishida、T.Ose、H.Nagasawa、K.Ishino、Y.Inoue、H.Fujiyasu：“压电效应辅助的 A1N/GaN 系统中的量子级联结构”Jpn.J.Appl.Phys.Part2 ,. 41・3A. 236-238 (2002)

A.Ishida, M.Kitano, T.Ose, H.Nagasawa, K.Ishino, Y.Inoue, H.Fujiyasu, H.Kan, H.Makino and T.Yao: "AlN/GaN Short-Period Superlattices with Monolayer AlN for Optical-Device Applications"Physica E. Vol.13. 1098-1101 (2002)

A.Ishida、M.Kitano、T.Ose、H.Nagasawa、K.Ishino、Y.Inoue、H.Fujiyasu、H.Kan、H.Makino 和 T.Yao：“单层 AlN/GaN 短周期超晶格

A.Ishida, T.Ohashi, S.Wang, T.Tsuchiya, K.Ishino, Y.Inoue, H.Fujiyasu: "PbSnCaTe Films and PbSnCaTe/PbSnTe Superlattices Prepared by Molecular Beam Epitaxy"Jpn. J. Appl. Phys.. 41(1)・6A. 3655-3657 (2002)

A.Ishida、T.Ohashi、S.Wang、T.Tsuchiya、K.Ishino、Y.Inoue、H.Fujiyasu：“分子束外延制备的 PbSnCaTe 薄膜和 PbSnCaTe/PbSnTe 超晶格”J. Appl。 41（1）·6A（2002）

A.Ishida, Y.Inoue, M.Kuwabara, H.Kan, H.Fujiyasu: "AlN/GaN Near-Infrared Quantum-Cascade Structures with Resonant-Tunneling Injectors Utilizing Polarization Fields"Jpn. J. Appl. Phys.. 41(2)・11B. L1303-L1305 (2002)

A.Ishida、Y.Inoue、M.Kuwabara、H.Kan、H.Fujiyasu：“利用极化场的谐振隧道注入器的 AlN/GaN 近红外量子级联结构”Jpn。 J. Phys. 41 (2)・11B。L1303-L1305 (2002)