Growth of new transparent conducting materials, gallium oxide single crystals, and their carrier doping

新型透明导电材料氧化镓单晶的生长及其载流子掺杂

基本信息

批准号：
12650001
负责人：
FUKUDA Tsuguo
金额：
$ 2.11万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650001/
关键词：
transparentconducting materials bulk single crystal carrier doping thermal treatment

项目摘要

In this study, we established all technologies and made database all research results, which can be referred widely as basic technological knowledge.By three growth technologies such as Czochralski (Cz), μ-Pulling Down (μ-PD) and Floating Zone (Fz) methods, various doped Ga_2O_3 single crystals such as (Ga_<1-x>W_x)_2O_3, (Ga_<1-x>Mo_x)_2O_3, (Ga_<1-x>Ge_x)_2O_3, (Ga_<1-x>Hf_x)_2O_3, (Ga_<1-x>Zr_x)_2O_3 were grown and their electrical and optical properties were investigated. Also, by using thermal treatment as a tool to make a oxygen deficiency for the grown crystals, Ga_2O_3 single crystals of n-type semiconducting was realized. We summarize the research results as follows:1. We established a technology to grow doped Ga_2O_3 single crystals by Cz method. For electrical and optical properties of the grown single crystals, the features of n-type semiconducting and blue luminescence, respectively, were clearly revealed.2. We established a technology to grow doped Ga_2O_3 single crystals by μ-PD method. For electrical and optical properties of the grown single crystals, the features of n-type semiconducting and blue luminescence, respectively, were clearly revealed.3. We established a technology to grow doped Ga_2O_3 single crystals by Fz method. For electrical and optical properties of the grown single crystals, the features of n-type semiconducting and blue luminescence, respectively, were clearly revealed.4. For the grown crystals by Cz, μ-PD, and Fz methods, the n-type semiconducting property was improved by optimizing partial pressure of mixture gas (oxygen and nitrogen) and thermal treatment temperature so that the crystals are of proper oxygen-deficiency.

在本研究中，我们建立了所有技术并将所有研究成果数据库化，可以作为基础技术知识广泛引用。通过直拉法（Cz）、μ-下拉（μ-PD）和浮区（Fz）三种生长技术)方法，各种掺杂Ga_2O_3单晶如(Ga_<1-x>W_x)_2O_3、(Ga_<1-x>Mo_x)_2O_3、生长了(Ga_<1-x>Ge_x)_2O_3、(Ga_<1-x>Hf_x)_2O_3、(Ga_<1-x>Zr_x)_2O_3并研究了它们的电学和光学性能。实现了N型半导体Ga_2O_3单晶的氧缺陷生长，我们的研究成果如下： 1．建立了Cz法生长掺杂Ga_2O_3单晶的技术，对于所生长的单晶的电学和光学性质，分别清楚地揭示了n型半导体和蓝色发光的特征。 2． μ-PD法制备的Ga_2O_3单晶的电学和光学性质，分别清晰地揭示了n型半导体和蓝色发光的特征。 3．采用Fz法生长掺杂Ga_2O_3单晶，生长出的单晶具有n型半导体发光和蓝光发光的特征。 4．、Fz方法，通过优化混合气体（氧气和氮气）的分压和热处理温度，使晶体处于适当的缺氧状态，从而提高n型半导体性能。