Oxidation mechanism of silicon and silicon-based ceramics in ozone-containing atmosphere.

硅及硅基陶瓷在臭氧气氛中的氧化机理

基本信息

批准号：
11650730
负责人：
NARUSHIMA Takayuki
金额：
$ 2.3万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650730/
关键词：
ozone oxidation silicon silicon carbide silica parabolic rate law kinetics rate-controlling step

项目摘要

IntroductionThe oxidation kinetics of silicon and silicon carbide were investigated in an oxygen-ozone atmosphere at 973 K, and the possible oxidation mechanism of silicon-based materials is discussed.ExperimentalThe samples used for oxidation tests were single crystalline silicon, polycrystalline silicon carbide (CVD), and single crystalline α(6H)-silicon carbide. An oxygen-ozone mixture gas (ozone gas partial pressure : 2-7 kPa, total pressure : 0.1 MPa) was generated with a silent discharge ozonizer system using dry oxygen as a source gas. Oxidation temperature was 973 K.Thickness of the oxide film formed on a sample was measured by ellipsometry at a fixed refractive index (1.462). The oxide films were examined by secondary ion mass spectroscopy (SIMS).Results and discussion(1) Oxidation kineticsParabolic behavior was observed at 973 K in oxygen-ozone mixture gas for the oxidation of silicon carbide C-face, Si-face and silicon. The oxidation rates of silicon and silicon carbide were much higher than those in pure oxygen. Atomic oxygen supplied by the dissociation of ozone gas seems to cause the increasing of oxidation rates, and the atomic oxygen diffusion through silica film is a rate-controlling process for oxidation because parabolic rate constant increased linearly with ozone gas partial pressure.(2) High oxidation rate of SiC C-faceThe oxidation rates of silicon carbide C-face in ozone-containing atmospheres are higher than those of Si-face and silicon. The higher oxidation rates of C-face than those of silicon may be caused by carbon in silica film formed on C-face detected with SIMS.

简介在973 K的氧-臭氧气氛中研究了硅和碳化硅的氧化动力学，并讨论了硅基材料可能的氧化机理。实验氧化测试使用的样品为单晶硅、多晶碳化硅（CVD），和单晶α(6H)-碳化硅氧气-臭氧混合气体（臭氧气体分压：2-7kPa，总。使用干燥氧气作为源气体，用无声放电臭氧发生器系统产生氧化温度为973K。通过椭圆光度法在固定折射率(1.462)下测量样品上形成的氧化膜的厚度。通过二次离子质谱（SIMS）对薄膜进行了检查。结果与讨论（1）氧化动力学在973处观察到抛物线行为K在氧-臭氧混合气体中氧化碳化硅C面、Si面和硅的氧化速率似乎比纯氧中由臭氧气体离解提供的氧化速率高。引起氧化速率的增加，并且原子氧通过二氧化硅膜的扩散是氧化的速率控制过程，因为抛物线速率常数随臭氧气体分压线性增加。（2）高SiC C面的氧化率碳化硅C面在含臭氧气氛中的氧化率高于Si面和硅，C面的氧化率高于硅，可能是由二氧化硅中的碳引起的。用SIMS检测C面形成的薄膜。