Oxidation mechanism of silicon and silicon-based ceramics in ozone-containing atmosphere.

硅及硅基陶瓷在臭氧气氛中的氧化机理

基本信息

批准号：
11650730
负责人：
NARUSHIMA Takayuki
金额：
$ 2.3万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650730/
关键词：
ozone oxidation silicon silicon carbide silica parabolic rate law kinetics rate-controlling step

项目摘要

IntroductionThe oxidation kinetics of silicon and silicon carbide were investigated in an oxygen-ozone atmosphere at 973 K, and the possible oxidation mechanism of silicon-based materials is discussed.ExperimentalThe samples used for oxidation tests were single crystalline silicon, polycrystalline silicon carbide (CVD), and single crystalline α(6H)-silicon carbide. An oxygen-ozone mixture gas (ozone gas partial pressure : 2-7 kPa, total pressure : 0.1 MPa) was generated with a silent discharge ozonizer system using dry oxygen as a source gas. Oxidation temperature was 973 K.Thickness of the oxide film formed on a sample was measured by ellipsometry at a fixed refractive index (1.462). The oxide films were examined by secondary ion mass spectroscopy (SIMS).Results and discussion(1) Oxidation kineticsParabolic behavior was observed at 973 K in oxygen-ozone mixture gas for the oxidation of silicon carbide C-face, Si-face and silicon. The oxidation rates of silicon and silicon carbide were much higher than those in pure oxygen. Atomic oxygen supplied by the dissociation of ozone gas seems to cause the increasing of oxidation rates, and the atomic oxygen diffusion through silica film is a rate-controlling process for oxidation because parabolic rate constant increased linearly with ozone gas partial pressure.(2) High oxidation rate of SiC C-faceThe oxidation rates of silicon carbide C-face in ozone-containing atmospheres are higher than those of Si-face and silicon. The higher oxidation rates of C-face than those of silicon may be caused by carbon in silica film formed on C-face detected with SIMS.

引言在973 K的氧气气氛中研究了硅和碳化硅的氧化动力学，并讨论了基于硅的材料的可能氧化机制。使用了用于氧化测试的样品是单晶硅，多晶硅硅硅硅（CVD）和单晶（Cycon）和单晶（Crycon）和单晶（Crycon）（Crbidic）。使用干氧作为源气体生成氧气混合气体（臭氧气体部分压力：2-7 kPa，总压：0.1 MPa）。氧化温度为973 k。在样品上形成的氧化物薄膜的厚度是通过固定折射率（1.462）的椭圆测量测量的。通过二级离子质谱法检查氧化物膜（SIMS）和讨论。硅和碳化硅的氧化速率比纯氧中的氧化速率高得多。通过臭氧气体解离提供的原子氧似乎会导致氧化速率的增加，并且通过硅胶膜的原子氧扩散是氧化速率的速率控制过程，因为抛物性速率恒定与散型的部分压力线性增加。高于Si-Face和Silicon。 C面的氧化速率比硅的氧化速率更高，这可能是由在用SIMS检测到的C-FACE形成的二氧化硅膜中引起的。