Development of a Heterojunction Structure Detector in the Submillimeter Wave Region

亚毫米波异质结结构探测器的研制

基本信息

批准号：
11650363
负责人：
SUZUKI Tetsu
金额：
$ 2.24万
依托单位：
Sendai National College of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11650363/
关键词：
millimeter wave heretojunction HBT structure detector model experiment AlGaAs GaAs サブミリ波 HBT マイクロ波帯モデル実験

项目摘要

A heretojunction bipolar transistor (HBT) structure detector has been studied as a new type detector in the millimeter (MM) and submillimeter (SMM) wave region. The detector which may have much higher sensitivity compared to the Schottky Barrier Diode (SBD) in the frequency range from 100GHz to 1THz.Primarily, we have studied the heterojunction structure detector theoretically as a simulation taking into account of transit time and parasitic elements, and experimentally as a model experiment using a Si bipolar transistor in the microwave region.The video sensitivity of 5x10^5 V/W has been obtained in the low frequency range, which is much higher than that of the diode detector. And also, the sensitivity of 2x10^3 V/W is obtained even at the frequency of about 8 times higher than the cutoff frequency (ft) of the transistor. The influence of the parasitic capacitance between base and corrector is not high for detector operation, not for amplifier operation, as predicted by the theoretical simulation. The result has suggested a possibility of special design of the emitter, base, corrector structure for the SMM wave detector.We have designed the emitter base structure specially for the SMM detector and AlGaAs/GaAs semiconductor layer and impurities structure for it. And we have completed semiconductor deposition precisely using the MBE method.Now the fabrication process of the detector are improved and going on using photolithography, ECR plasma etching, and selective wet etching.

在毫米（MM）和亚毫升（SMM）波区域中，已经研究了一种近距离结晶晶体管（HBT）结构检测器。与Schottky屏障二极管（SBD）相比，检测器的灵敏度可能更高，从100GHz到1THZ的频率范围内。我们在理论上研究了异质结构结构探测器，这是一个模拟，考虑到运输时间和寄生元素，以及寄生元素，以及在微波区域中使用SI双极晶体管的模型实验。在低频范围内获得了5x10^5 V/W的视频灵敏度，该敏感性比二极管检测器的视频灵敏度高得多。而且，即使在晶体管的截止频率（FT）高约8倍的频率下，也获得了2x10^3 V/W的灵敏度。基础和校正器之间的寄生电容的影响对于检测器的操作不是很高，而不是由理论模拟所预测的放大器操作的影响。结果表明，SMM波检测器的发射极，基础，校正结构的特殊设计可能性。我们已经设计了SMM检测器和藻类/GAAS半导体层以及其杂质结构的发射极基碱结构。我们已经使用MBE方法精确地完成了半导体沉积。