Development of highly-functional monolithic optical integrated circuits for photonic networking

用于光子网络的高功能单片光集成电路的开发

• 批准号: 11355016
• 负责人: NAKANO Yoshiaki
• 金额: $ 12.22万
• 依托单位: University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-11355016/
• 关键词: semiconductor optical Integrated circuit; selective area growth; OVPE; Mach-Zehnder interferometer; MMI coupler; optical wavelength conversion; photonic switching; 光スイッチング; MMlカプラ; AWG; MOCVD; 多モード干渉カプラ; MMI

1.Selective area growth mechanism in metal organic vapor phase epitaxy integration : Concerning the selective area MOVPE growth which forms the basis of monolithically integrated photonic circuits fabrication, we experimentally obtained selective growth thickness profiles of InP and GaAs, and extracted important parameters such as sticking probability and diffusion constants by comparing the experimental profiles with two dimensional simulation profiles. These parameters enable computer-aided design of photomasks in photonic integrated circuits (PICs) through the simulation of selective area growth.2.Mach-Zehnder optical switch circuit incorporating bulk InGaAsP/InP high-mesa waveguides : We investigated Mach-Zehnder interferometer optical switch circuits with high-mesa waveguide structure utilizing Franz-Keldysh effect in bulk InGaASP on InP substrates. We established methane-hydrogen cyclic reactive ion beam etching technique, and made fabrication of the high-mesa waveguides possible … More . Devices were then fabricated by using the etching technique and an electron beam lithography. Consequently, switching voltage as low as 3V was achieved over a wavelength range of 1.53-1.56 μm independent of polarization. The product of the phase modulation region length and the switching voltage is 1.5V mm, which is four times better than previous reports.3.Design and fabrication of integrated all-optical witch circuits se he selective re growth and multimode interference (MMI) devices : The selective area MOVPE above has been utilized to integrate semiconductor optical amplifiers, MMI couplers, and input/output waveguides on InP substrates, and thereby all-optical switch circuits were fabricated. Extinction ratio was improved in an optical switching experiment by control light.4.All-optical wavelength conversion circuit based on photo-induced refractive index change in electro-absorption (EA) optical modulators : By utilizing polarization dependence of photo-induced refractive index change in EA modulators, we demonstrated all-optical wavelength conversion with a very simple configuration consisting of an EA modulator and a polarizer.5.Study on wavelength assigned photonic switching system : We proposed "wavelength assigned photonic switching system (WAPS)" as a method of optical switching in photonic networks utilizing photonic integrated circuits, and studied its transmission characteristics as well as its applicability to IP networks. Less

1.金属有机气相外延集成中的选择性区域生长机制：针对构成单片集成光子电路制造基础的选择性区域MOVPE生长，我们通过实验获得了InP和GaAs的选择性生长厚度分布，并提取了粘着等重要参数通过将实验轮廓与二维仿真轮廓进行比较，可以确定概率和扩散常数，这些参数可以通过选择性区域的仿真对光子集成电路 (PIC) 中的光掩模进行计算机辅助设计。 2.结合体InGaAsP/InP高台面波导的Mach-Zehnder光开关电路：我们研究了利用InP衬底上体InGaASP中的Franz-Keldysh效应的具有高台面波导结构的Mach-Zehnder干涉仪光开关电路我们建立了甲烷。 -氢循环反应离子束蚀刻技术，使高台面波导的制造成为可能……然后使用经测试，在 1.53-1.56 μm 的波长范围内实现了低至 3V 的开关电压，与偏振无关。相位调制区域长度和开关电压的乘积为 1.5V mm。比之前的报告好四倍。 3.集成全光巫电路的设计和制造选择性再生和多模干扰（MMI）器件：上面的选择性区域MOVPE已被用于在InP衬底上集成半导体光放大器、MMI耦合器和输入/输出波导，从而制作了全光开关电路，通过控制光来提高光开关实验的消光比。4.基于InP的全光波长转换电路。电吸收 (EA) 光调制器中光致折射率变化：通过利用 EA 调制器中光致折射率变化的偏振依赖性，我们演示了全光波长转换由EA调制器和偏振器组成的简单配置。5.波长指定光子切换系统的研究：我们提出了“波长指定光子切换系统（WAPS）”作为利用光子集成电路的光子网络中的光切换方法，并研究了其传输特性及其对 IP 网络的适用性。

项目成果

Drew N.Maywar: "Robust all-optical control of a semiconductor optical amplifier flip-flop"Technical Digest, Topical Meeting on Optical Amplifiers and their Applications (OAA 2000). OMD14. 79-81 (2000)

Drew N.Maywar：“半导体光放大器触发器的鲁棒全光控制”技术文摘，光放大器及其应用专题会议 (OAA 2000)。

Byongjin Ma: "Directionally-coupled semiconductor optical amplifier for all-optical digital wavelength conversion"Technical Digest, the Pacific Rim Conference on Lasers and Electro-Optics (CLEO PacRim '99). FI5. 1161-1162 (1999)

Byongjin Ma：“用于全光数字波长转换的定向耦合半导体光放大器”技术文摘，环太平洋激光和电光会议 (CLEO PacRim 99)。

Yoshiaki Nakano: "(Invited Paper) Recent advances in semiconductor photonic devices and integrated circuits"Technical Digest, 26th General Assembly of the International Union of Radio Science (URSI). D6.6. 253 (1999)

中野义明：“（特邀论文）半导体光子器件和集成电路的最新进展”技术文摘，国际无线电科学联盟（URSI）第26届大会。

Drew N.Maywar: "All-optical set and reset of semiconductor-optical-amplifier-based flip-flop"Technical Digest (Postdeadline Papers), 10^<th> Topical Meeting on Optical Amplifiers and their Applications (OAA'99). PDP-3. 11-14 (1999)

Drew N.Maywar：“基于半导体光放大器的触发器的全光设置和重置”技术文摘（截止日期后论文），第 10 届光放大器及其应用专题会议 (OAA99)。

Olivier Feron: "MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates : distribution of composition and growth rate in a horizontal reactor"Applied Surface Science. 159-160・1-4. 318-327 (2000)

Olivier Feron：“InP 和 GaAs 衬底上的 InGaAsP、InGaAs 和 InGaP 的 MOCVD：卧式反应器中的成分分布和生长速率”应用表面科学 159-160・1-4（2000 年）。