New AィイD23ィエD2BCィイD23ィエD2DィイD22ィエD2OィイD214ィエD2-type single crystal materials for piezoelectric applications

用于压电应用的新型 AD23D2BCD23D2D22D2OD214D2 型单晶材料

• 批准号: 10650301
• 负责人: FUKUDA Tsuguo
• 金额: $ 2.18万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650301/
• 关键词: piezoelectric crystal; bulk single crystal; device characteristic; substitutional material

Recent progress in electronic technology requires new piezoelectric crystals having superior properties such as zero temperature coefficients and large electromechanical coupling factors. We have developed a series of new leading candidates to satisfy those requirements : LaィイD23ィエD2GaィイD25ィエD2SiOィイD214ィエD2 (Langasite, LGS), LaィイD23ィエD2NbィイD20.5ィエD2GaィイD25.5ィエD2OィイD214ィエD2 (LNG) and LaィイD23ィエD2TaィイD20.5ィエD2GaィイD25.5ィエD2OィイD214ィエD2 (LTG). Since LGS-type structure has 4 kinds of sites (AィイD23ィエD2BCィイD23ィエD2DィイD22ィエD2OィイD214ィエD2), it has high potential for creation of new materials with better properties. By isovalent substitution, a series of LGS-type crystals have been synthesized. The determination of lattice constants for these crystals showed that an increase of lattice constants is advantage for the increment of piezoelectric moduli. Especially, and increase of an average ionic radius in A-site was found to be effective. According to this tendency, new materials have been synthesize … More d by two kinds of aliovalent substitutions, one is the substitution with A-site, and the other is that with all A-, B-, C-, D-sites. Crystallinity of these materials was examined by the micro pulling-down technique. Among them, transparent LaィイD23-xィエD2SrィイD2xィエD2TaィイD20.5+x/2ィエD2GaィイD25.5-x/2ィエD2OィイD214ィエD2 and SrィイD23ィエD2TaGaィイD23ィエD2SiィイD22ィエD2OィイD214ィエD2 micro single crystals without crack formation were grown. Subsequently, single crystals of these materials 1 inch in diameter have also been grown by the Czochralski technique, at a pulling rate of 0.6 mm/h. Obvious variation of lattice constants and chemical composition of these crystals along the growth axis was not observed. They showed superior piezoelectric properties comparable to LGS, LNG and LTG.Using LGS single crystals, we made monolithic-type filters (10.4 and 21.4 MHz) with low input and output impedance, small size and with low attenuation, compared with those made of quartz. A 71MHz wide passband SMD filter for the GSM base station was also made and exhibited superior properties. The volume of a 71 MHz LGS filter is 1/5 that of a conventional discrete-type one made of quartz. Less

电子技术的最新进展需要具有优质特性的新型压电晶体，例如零温度系数和大型机电耦合因子。 We have developed a series of new leading candidates to satisfy those requirements: Lai D23E D2Gay D25E D2SiOy D214E D2 (Langasite, LGS), Lai D23E D2NbiE D20.5E D2Gay D25.5E D2Oy D214E D2 (LNG) and Lai D23E D2Tayy D20.5E D2Gayy D25.5E D2OYYY D214E D2（LTG）。由于LGS型结构具有4种站点（AI D23E D2BCI D23E D2D2D2D2D2D2D2OYYY D214E D2），因此它具有很高的潜力，可以创建具有更好特性的新材料。通过等值替代，已经合成了一系列LGS型晶体。这些晶体的晶格常数的测定表明，晶格常数的增加对于压电模量的增加是有利的。特别是，发现A位点中平均离子半径的增加是有效的。根据这种趋势，新材料已经合成了……更多的d被两种Aliovalent取代，一种是带有A位置的替代，另一个是所有A-，B-，C-，D-doce。这些材料的结晶度通过微拉下技术检查。其中，透明的LAI D23-XIE D2SRHI D2XIE D2TASERHI D20.5+X/2D2GAI D25.5-X/2D2OI D214D2和SRI D23D222TAGAGAI D23D2SI D2SI D2SI D2SI D2SI D22OI D214D 2 MICCROTIND SIMS CRACK NOTICATION NODITATION NOFITATION NOWN NOwnation Singal watals watals growant granl watal watal growant。随后，这些材料的单晶直径为1英寸，也通过牙齿技术以0.6 mm/h的速度生长。未观察到这些晶体沿生长轴的明显变化和这些晶体的化学组成。它们显示出与LGS，LNG和LTG相当的优质压电性能。使用LGS单晶，我们制作了单片型过滤器（10.4和21.4 MHz），其输入和输出阻抗，尺寸较小，尺寸较小，并且衰减较低。还制造了一个71MHz宽的Passband SMD滤波器，并制造了出色的特性。 71 MHz LGS滤波器的体积为1/5，该滤波器由石英制成的常规离散型滤波器的体积为1/5。较少的

项目成果

T.Fukuda et al.: "Crystal Growth of Oxide and Fluoride Materials for Optical, Piezoelectric and Other Applications"Journal of Materials Science : Materials in Electronics. 10. 571-580 (1999)

T.Fukuda 等人：“用于光学、压电和其他应用的氧化物和氟化物材料的晶体生长”材料科学杂志：电子材料。

H. Takeda et al.: "Crystal Growth and Structure of LaィイD23ィエD2MィイD14+ィエD1GaィイD25ィエD2OィイD214ィエD2 (M=Ti, Zr, Hf)"Journal of Alloys and Compounds. 290. 244-249 (1999)

H.Takeda等人：“LaiD23D2MD14+D1GaD25D2OD214D2(M=Ti、Zr、Hf)的晶体生长和结构”合金和化合物杂志290.244-249(1999)。

H. Takeda et al.: "Synthesis and Characterization of SrィイD23ィエD2TaGaィイD23ィエD2SiィイD22ィエD2OィイD214ィエD2 Single Crystals"Journal of Materials Research Bulletin. (in press).

H. Takeda 等人：“SrD23D2TaGaD23D2SiD22D2OD214D2 单晶的合成和表征”材料研究通报杂志（正在出版）。

Tsuguo Fukuda: "Crystal Growth of Oxide and Fluoride Materials for Optical, Piezoelectric and Other Applications"Journal of Materials Science : Materials in Electronics. 10. 571-580 (1999)

Tsuguo Fukuda：“用于光学、压电和其他应用的氧化物和氟化物材料的晶体生长”材料科学杂志：电子材料。

J. Sato et al.: "Czochralski growth of REィイD23ィエD2GaィイD25ィエD2SiOィイD214ィエD2 (RE=La, Pr, Nd) single crystals for the analysis of the influence of rare earth substitution on piezoelectricity"Journal of Crystal Growth. 191. 746-753 (1998)

J. Sato 等人：“RED23D2GaD25D2SiOD214D2 (RE=La、Pr、Nd) 单晶的直拉生长，用于分析稀土取代对压电性的影响”《晶体生长杂志》191. 746-753 (1998)。