New AィイD23ィエD2BCィイD23ィエD2DィイD22ィエD2OィイD214ィエD2-type single crystal materials for piezoelectric applications

用于压电应用的新型 AD23D2BCD23D2D22D2OD214D2 型单晶材料

基本信息

批准号：
10650301
负责人：
FUKUDA Tsuguo
金额：
$ 2.18万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650301/
关键词：
piezoelectric crystal bulk single crystal device characteristic substitutional material

项目摘要

Recent progress in electronic technology requires new piezoelectric crystals having superior properties such as zero temperature coefficients and large electromechanical coupling factors. We have developed a series of new leading candidates to satisfy those requirements : LaィイD23ィエD2GaィイD25ィエD2SiOィイD214ィエD2 (Langasite, LGS), LaィイD23ィエD2NbィイD20.5ィエD2GaィイD25.5ィエD2OィイD214ィエD2 (LNG) and LaィイD23ィエD2TaィイD20.5ィエD2GaィイD25.5ィエD2OィイD214ィエD2 (LTG). Since LGS-type structure has 4 kinds of sites (AィイD23ィエD2BCィイD23ィエD2DィイD22ィエD2OィイD214ィエD2), it has high potential for creation of new materials with better properties. By isovalent substitution, a series of LGS-type crystals have been synthesized. The determination of lattice constants for these crystals showed that an increase of lattice constants is advantage for the increment of piezoelectric moduli. Especially, and increase of an average ionic radius in A-site was found to be effective. According to this tendency, new materials have been synthesize … More d by two kinds of aliovalent substitutions, one is the substitution with A-site, and the other is that with all A-, B-, C-, D-sites. Crystallinity of these materials was examined by the micro pulling-down technique. Among them, transparent LaィイD23-xィエD2SrィイD2xィエD2TaィイD20.5+x/2ィエD2GaィイD25.5-x/2ィエD2OィイD214ィエD2 and SrィイD23ィエD2TaGaィイD23ィエD2SiィイD22ィエD2OィイD214ィエD2 micro single crystals without crack formation were grown. Subsequently, single crystals of these materials 1 inch in diameter have also been grown by the Czochralski technique, at a pulling rate of 0.6 mm/h. Obvious variation of lattice constants and chemical composition of these crystals along the growth axis was not observed. They showed superior piezoelectric properties comparable to LGS, LNG and LTG.Using LGS single crystals, we made monolithic-type filters (10.4 and 21.4 MHz) with low input and output impedance, small size and with low attenuation, compared with those made of quartz. A 71MHz wide passband SMD filter for the GSM base station was also made and exhibited superior properties. The volume of a 71 MHz LGS filter is 1/5 that of a conventional discrete-type one made of quartz. Less

电子技术的最新进展需要具有卓越性能的新型压电晶体，例如零温度系数和大机电耦合因子，我们开发了一系列新的领先候选材料来满足这些要求：LaiD23D2GaD25D2SiO D214 D2（Langasite，LGS）， La D23 D2Nb D20.5 D2 Ga D25.5 D2O D214 D2 (LNG) 和 La D23 D2 Ta D20.5 D2 Ga D25.5D2OD214D2 (LTG) 由于 LGS 型结构有 4 种位点。 (AD23D2BCD23D2DD22D2OD214D2)，通过等价取代，合成了一系列LGS型晶体，这些晶体的晶格常数的测定表明，晶格常数的增加有利于创造新材料。特别是压电模量的增量。发现A位平均离子半径的增加是有效的。根据这种趋势，通过两种异价取代合成了新材料，一种是A位取代，另一种是A位取代。通过微下拉技术检查了这些材料的所有A-、B-、C-、D-位点的结晶度。未形成裂纹的 La D23-x D2 Sr D2x D2 Ta D20.5+x/2 D2 Ga D25.5-x/2 D2O D214 D2 和 Sr D23 D2TaGa D23 D2Si D22 D2O D214 D2 微单晶随后，这些材料的单晶直径为 1 英寸，通过直拉技术以 0.6 毫米/小时的提拉速率生长，没有观察到这些晶体沿生长轴的晶格常数和化学成分的明显变化。它们表现出与 LGS、LNG 和 LTG 相媲美的卓越压电特性。使用 LGS 单晶，我们制作了单片型滤波器（10.4 和 21.4 MHz），与石英制成的71MHz宽通带SMD滤波器相比，输入和输出阻抗低，尺寸小，衰减低，并且具有71MHz LGS滤波器的优越性能。 5 比传统的石英制成的离散型要少。