PREPARATION OF HIGHLY SENSITIVE AND STABLE GAS SENSING FILM BY USING HYDROTHERMALLY TREATED SEMICONDUCTING OXIDE COLLOIDAL PARTICLE

水热处理半导体氧化物胶体颗粒制备高灵敏稳定气敏膜

基本信息

批准号：
10450324
负责人：
YAMAZOE Noboru
金额：
$ 9.02万
依托单位：
KYUSHU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10450324/
关键词：
Hydrothermal treatment Semiconducting oxide Tin-oxide sol Thin film sensor High sensitivity Stability Small particle Grain size 酸化スズコロイド粒子結晶子径

项目摘要

Thin film semiconductor gas sensors have been an intensive research target owing to their indispensable advantages such as high sensitivity, low fabrication cost and applicability for microsensors. Although there have been many attempts to fabricate thin-film sensors, none of them have been commercially available yet. It seems to be of key importance for a thin film device how the thin film can be fabricated uniform and kept stable during sensor operation. This study aims at establishing or evaluating hydrothermal treatment condition for SnOィイD22ィエD2 sol solutions, thermal growth behavior of SnOィイD22ィエD2 grains (crystallites) at elevated temperatures and gas sensing properties of the resulting this film device.1. Preparation of SnOィイD22ィエD2 sol by a hydrothermal treatment and grain growth behavior of hydrothermally treated SnOィイD22ィエD2A Hydrothermal treatment of α-stannic acid gel in ammonia water gives to a sol solution dispersing nanoparticle of SnOィイD22ィエD2 with a narrow particle si … More ze distribution (5 -7 nm). In addition, the SnOィイD22ィエD2 powder derived from the sol solution is very resistant to grain growth at evaluated temperature. This indicates that the thermal growth of crystallites is suppressed remarkably with the hydrothermal treatment. The suppression was more pronounced with decreasing SnOィイD22ィエD2 content of the sol solution, almost saturating at 1.8wt% sol content. It is seen that, at this content, crystallite size can be small as 13 nm after calcination at 900℃2. Gas sensing properties of thin film devices prepared from hydrothermally treated sol solutionsThis film SnOィイD22ィエD2 sensors were prepared from the hydrothermally treated sol solutions by a spin-coating method. This film devices proved higher sensitivity and quicker response transients compared with the conventional sintered-block type ones. These effects are expected to arise from a reduction in gas sensing layer thickness as well as smaller grain size. It was found that the HィイD22ィエD2 sensitivity decreased with an increase in film thickness. The CO sensitivity, on the other hand, was found to be almost independent on the film thickness. It seems that the observed difference in the thickness dependence reflects the difference in gas diffusion properties between HィイD22ィエD2 and CO through the micro pores of the film. Less

薄膜半导体气体传感器因其灵敏度高、制造成本低和适用于微传感器等不可缺少的优点而成为人们广泛研究的对象，尽管人们已经进行了许多制造薄膜传感器的尝试，但尚未实现商业化。对于薄膜器件来说，如何制造均匀的薄膜并在传感器运行过程中保持稳定似乎至关重要。本研究旨在建立或评估 SnO2D22D2 的水热处理条件。溶胶溶液、SnOD22D2 晶粒（微晶）在高温下的热生长行为以及所得薄膜器件的气敏性能。 1．通过水热处理制备 SnOD22D2 溶胶，以及水热处理后的 SnO-D22D2A 的晶粒生长行为。 -氨水中的锡酸凝胶形成分散纳米粒子的溶胶溶液此外，来自溶胶溶液的 SnOD22D2 粉末在评估温度下对晶粒生长具有很强的抵抗力，这表明水热法抑制了微晶的热生长。随着溶胶溶液中 SnO22D2 含量的降低，抑制作用更加明显，在 20℃时几乎达到饱和。 1.8wt% 溶胶含量可以看出，在此含量下，在 900℃ 下煅烧后，微晶尺寸可小至 13 nm。2. 水热处理溶胶溶液制备的薄膜器件的气敏性能。与传统的烧结块型器件相比，该薄膜器件通过旋涂法水热处理溶胶溶液，具有更高的灵敏度和更快的响应瞬态。这些效应预计是由于气敏层厚度的减小以及晶粒尺寸的减小而产生的。我们发现，HiD22 的灵敏度随着膜厚度的增加而降低，而 CO 的灵敏度则几乎为零。观察到的厚度依赖性差异似乎反映了 HID22D2 和 CO 通过薄膜微孔的气体扩散特性的差异。