PREPARATION OF HIGHLY SENSITIVE AND STABLE GAS SENSING FILM BY USING HYDROTHERMALLY TREATED SEMICONDUCTING OXIDE COLLOIDAL PARTICLE

水热处理半导体氧化物胶体颗粒制备高灵敏稳定气敏膜

基本信息

批准号：
10450324
负责人：
YAMAZOE Noboru
金额：
$ 9.02万
依托单位：
KYUSHU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10450324/
关键词：
Hydrothermal treatment Semiconducting oxide Tin-oxide sol Thin film sensor High sensitivity Stability Small particle Grain size 酸化スズコロイド粒子結晶子径

项目摘要

Thin film semiconductor gas sensors have been an intensive research target owing to their indispensable advantages such as high sensitivity, low fabrication cost and applicability for microsensors. Although there have been many attempts to fabricate thin-film sensors, none of them have been commercially available yet. It seems to be of key importance for a thin film device how the thin film can be fabricated uniform and kept stable during sensor operation. This study aims at establishing or evaluating hydrothermal treatment condition for SnOィイD22ィエD2 sol solutions, thermal growth behavior of SnOィイD22ィエD2 grains (crystallites) at elevated temperatures and gas sensing properties of the resulting this film device.1. Preparation of SnOィイD22ィエD2 sol by a hydrothermal treatment and grain growth behavior of hydrothermally treated SnOィイD22ィエD2A Hydrothermal treatment of α-stannic acid gel in ammonia water gives to a sol solution dispersing nanoparticle of SnOィイD22ィエD2 with a narrow particle si … More ze distribution (5 -7 nm). In addition, the SnOィイD22ィエD2 powder derived from the sol solution is very resistant to grain growth at evaluated temperature. This indicates that the thermal growth of crystallites is suppressed remarkably with the hydrothermal treatment. The suppression was more pronounced with decreasing SnOィイD22ィエD2 content of the sol solution, almost saturating at 1.8wt% sol content. It is seen that, at this content, crystallite size can be small as 13 nm after calcination at 900℃2. Gas sensing properties of thin film devices prepared from hydrothermally treated sol solutionsThis film SnOィイD22ィエD2 sensors were prepared from the hydrothermally treated sol solutions by a spin-coating method. This film devices proved higher sensitivity and quicker response transients compared with the conventional sintered-block type ones. These effects are expected to arise from a reduction in gas sensing layer thickness as well as smaller grain size. It was found that the HィイD22ィエD2 sensitivity decreased with an increase in film thickness. The CO sensitivity, on the other hand, was found to be almost independent on the film thickness. It seems that the observed difference in the thickness dependence reflects the difference in gas diffusion properties between HィイD22ィエD2 and CO through the micro pores of the film. Less

薄膜半导体气体传感器由于其不可或缺的优势，例如高灵敏度，低制造成本和微传感器的适用性，因此一直是一个密集的研究目标。尽管已经有很多尝试制造薄膜传感器的尝试，但尚未在商业上使用。对于薄膜设备的薄膜如何制造均匀并保持传感器操作过程中，这似乎是至关重要的。这项研究旨在建立或评估SNOI D22 SOL溶液，SNOI D22晶粒（Crystallites）在升高温度下的热热治疗条件，以及所得膜设备的气体感测特性。1。通过热液处理和氨水中α-斯坦尼酸凝胶的氢化SNOI D22A水热处理的晶粒生长行为来制备SNOI D22 SOL在氨水中的水热处理可为SOL溶液分散SNOI D22的纳米颗粒，并具有窄的粒子SI…更多的ZE Ze分布（5 -7 nm）。另外，从SOL溶液中衍生的SNOI D22粉末对评估温度下的晶粒生长非常抗性。这表明通过水热处理可极大地抑制微晶的热生长。抑制作用更为明显，而SOL溶液的SNOI D22含量降低，几乎以1.8wt％的SOL含量饱和。可以看出，在此内容下，在900℃2计算后，结晶石的大小可能很小为13 nm。通过热水处理的SNOI D22传感器制备的薄膜设备的气体灵敏度特性是通过自旋涂层方法从水热处理的SOL溶液中制备的。与常规的烧结型型型相比，该膜设备证明了更高的灵敏度和更快的响应瞬变。这些影响预计会导致气体灵敏度层厚度以及较小的晶粒尺寸的降低。发现H-D22-D2灵敏度随膜厚度的增加而降低。另一方面，发现CO敏感性几乎独立于膜厚度。看来，观察到的厚度依赖性差异反映了HII D22和CO之间通过膜的微孔差异的差异。较少的