Study on Surface Reaction Processes Using High Performance Beam Device

利用高性能束流装置进行表面反应过程的研究

基本信息

批准号：
10308016
负责人：
SUGAI Hideo
金额：
$ 24.62万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10308016/
关键词：
plaasma processing etching CVD surface reaction neutral radical ion beam silicon XPS プロズマプロセス

项目摘要

To investigate surface reaction processes in plasma processing (etching, CVD) for semiconductor manufacturing, highly controlled beam experiment has been carried out A few kinds of reactive ionic species important for processing are irradiated to a substrate with controlled energy and flux, and various kinds of surface-desorbed ionic and neutral radicals are detected by highly sensitive quadrupole mass spectrometer. At the same time, beam-irradiated surface is analyzed by in-situ XPS, Our purpose is to understand reaction process occurring on the surface based on these measurements.The project is carried out focused on the following points.( 1 ) Improvement of the experimental setupThe experimental setup is improved : detection sensitivity of neutral radicals are increased and in-situ XPS device is installed to the apparatus.( 2 ) Study on reactions of fluorocarbon ion beam on silicon surfaceCF_3^+ and CF_2^+ ion beam are irradiated on silicon surface, where surface-produced species such as SiF_2, SiF_4 and CF_x neutral radicals are successfully detected. Furthermore, surface state is monitored by in-situ XPS.( 3 ) Study on reactions of fluorocarbon ion beam on silicon dioxide surfaceCF_3^+ and CF_2^+ ion beam are irradiated on silicon dioxide surface, where surface-produced species and surface state are monitored by quadrupole mass spectrometer and in-situ XPS. Furthermore, the correlation of etching rate with species desorbed from the surface is investigated.( 4 ) Study on fluorine ion beam with siliconFluorine ions which are believed to be one of important species for etching are irradiated on silicon surface, while surface-produced species are monitored.

为了研究半导体制造等离子处理（蚀刻、CVD）中的表面反应过程，进行了高度受控的束流实验，将几种对处理重要的活性离子种类以受控的能量和通量照射到基材上，并进行了各种类型的反应。通过高灵敏度四极杆质谱仪检测表面解吸的离子和中性自由基。同时，通过原位XPS对光束照射的表面进行分析，我们的目的是根据这些测量来了解表面发生的反应过程。该项目主要围绕以下几点进行。（1）改进实验装置改进了实验装置：提高了中性自由基的检测灵敏度，并安装了原位XPS装置。(2)氟碳离子束在硅表面CF_3^+和CF_2^+离子反应的研究光束照射在硅表面，成功检测到表面产生的SiF_2、SiF_4和CF_x中性自由基等物质。 (3)氟碳离子束在二氧化硅表面反应的研究CF_3^+和CF_2^+离子束照射在二氧化硅表面,表面产生的物种和表面态为通过四极杆质谱仪和原位 XPS 进行监测。此外,还研究了刻蚀速率与表面脱附物质的相关性。(4)氟离子束与硅的研究将被认为是刻蚀重要物质之一的氟离子照射到硅表面,而表面产生的物质被被监控。