New Protium Function

新 Protium 功能

• 批准号: 10148106
• 负责人: HAYASHI Yasunori
• 金额: $ 43.39万
• 依托单位: Kyushu University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research on Priority Areas (A)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10148106/
• 关键词: protium; hydrogen; transparent conductor; oxide; nitride; proton conduction; strain super lattice; low dimensional super structure; エネルギーバンド構造; 光電気化学; ヘリコンスパッタ; カソードルミネッセンス

In order to develop a new function of materials induced by hydrogen incorporation, thin films of nitrides, oxides and metal multilayers were investigated in relation to the optical and electrical properties. Investigations on proton conduction at middle-high temperatures were also carried out in strained super lattice films and low-dimensional artificial structures of perovskite type oxides.The effects of hydrogen incorporation on electrical conduction of AlN and CuN were appeared differently depending on the difference in the stoichiometry of the nitrides. Electrical conductivities of Sn and Ge mixed oxides and ZnO films were increased more than 4 orders of magnitude without loosing their transparency for visible light.Strain distribution in super-structures of SrCeO_3/SrZrO_3 modifies the proton conduction. The mutual distance between oxide ions around a proton was revealed to be a critical factor for the proton conduction. Nano-scale 2 dimensional structures of perovskite type oxides were fabricated for further investigation of proton conduction at the interface between electrodes and solid electrolytes.

为了开发氢掺入材料的新功能，研究了氮化物、氧化物和金属多层薄膜的光学和电学性能。在应变超晶格薄膜和钙钛矿型氧化物低维人工结构中也开展了中高温质子传导的研究。氢掺入对AlN和CuN电导率的影响随着电导率的不同而出现不同的变化。氮化物的化学计量。 Sn、Ge混合氧化物和ZnO薄膜的电导率提高了4个数量级以上，且不损失可见光透明度。SrCeO_3/SrZrO_3超结构中的应变分布改变了质子传导。研究表明，质子周围的氧化物离子之间的相互距离是质子传导的关键因素。制备了钙钛矿型氧化物的纳米级二维结构，以进一步研究电极和固体电解质之间界面的质子传导。

项目成果

M.Arita: "Effects of Hydrogen Introduction on Electrical and Optical Properties of Cd-doped Ge Oxide and Zn Oxide Thin Films"The Fourth Pacific Rim Proceedings of International Conference on Advanced Materials and Processing. PRICM4. 2841-2844 (2001)

M.Arita：“氢气引入对掺镉氧化锗和氧化锌薄膜电学和光学性能的影响”第四届环太平洋先进材料与加工国际会议论文集。

石川努: "Cu-N薄膜の電気特性に及ぼす水素注入の効果"水素エネルギーシステム. 25・1. 24-28 (2000)

Tsutomu Ishikawa：“氢注入对 Cu-N 薄膜电性能的影响”25・1（2000 年）。

Y. Hayashi: "Modification of Electrical Properties of Metal Oxide and Thin Films by Protium Inclusion"Progress In Hydrogen Treatment of Materials, Donetsk-2001-Coral Gables. 67-72 (2001)

Y. Hayashi：“通过氕夹杂物改变金属氧化物和薄膜的电性能”材料氢处理进展，Donetsk-2001-Coral Gables。

H. Yugami: "Fabrication of proton conductors with nano-structured surface by alumina membrane mask"Solid State Ionics. 154-155. 693-697 (2002)

H. Yugami：“通过氧化铝膜掩模制造具有纳米结构表面的质子导体”固态离子学。

Y.Hayashi: "Modification of Electrical and Optical Properties of Metal Nitride Thin Films by Hydrogen Inclusion"J. Alloys Comp.. 330-332. 348-351 (2002)

Y.Hayashi：“通过氢夹杂改变金属氮化物薄膜的电学和光学性能”J。