Growth and properties of III-V-semiconductor/ferromagnet hybrid materials system (GaAs : Mn)

III-V族半导体/铁磁体混合材料系统（GaAs：Mn）的生长和性能

基本信息

批准号：
08455006
负责人：
TANAKA Masaaki
金额：
$ 4.29万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455006/
关键词：
GaAs : Mn MnAs GaAs Si substrates III-V-semiconductor ferromagnet hybrid materials system molecular beam epitaxy (MBE)ferromagnmet-semiconductor heterostructures ferromagnetic semiconductor GaMnAs 磁気結合 GaAs : Mn MnAS 磁性半導体異常ホール

项目摘要

Recent progress in epitaxial growth technology has made it possible to prepare a variety of new artificial thin films and heterostructures (HSs) consisting of dissimilar materials. Among them, stable epitaxial ferromagnet/semiconductor HSs offer unprecedented opportunities for basic and applied research, adding a new degree of freedom in materials design. We have studied epitaxial growth and physical properties of such novel dissimilar heterostructures focusing on ferromagnetic compound/Ill-V semiconductor systems.We have successfully grown MnAs/GaAs(00l) and MnAs/Si(001) ferromagnet/semiconductor single HSs, and MnAs/GaAs/MnAs ferromagnet/semiconductor trilayer HSs on GaAs (111)B and on Si(111) substrates by molecular-beam epitaxy (MBE). Despite dissimilarity in crystal structure, chemical bonding, electronic and magnetic properties, cross-sectional images by transmission electron microscopy showed that the HSs are formed as intended with fairly smooth and atomically abrupt interfaces. In the trilayer HSs, double-step features were observed in magnetization characteristics due to the difference in coercive force between the top and bottom MnAs layers. The interlayer coupling was little when the thickness of the GaAs spacer layer was 5-10 nm.We have also studied epitaxial growth and properties of (GaMn)As thin films and (GaMn)As/A1As quantum HSs grown by low-temperature MBE.(GaMn)As is a new class of III-V based magnetic alloy semiconductor, which contains a large amount of Mn atoms (up to -8%) far above the equilibrium solubility limit of Mn in GaAs. We show that the feasibility of preparing such a III-V based ferromagnetic semiconductor and its HSs gives a new degree of freedom in the materials design of III-V systems, as well as device applications using both magnetic and optical/electronic functions in III-V semiconductors.

外延生长技术的最新进展使得准备各种由不同材料组成的新型人工薄膜和异质结构（HSS）。其中，稳定的外延铁磁铁/半导体HSS为基础和应用研究提供了前所未有的机会，增加了材料设计的新自由度。我们已经研究了针对铁磁化合物/ILL-V半导体系统的这种新型异质结构的外延生长和物理特性。我们成功地种植了MNAS/GAAS（00L）和MNAS/SI（001）Ferromagnet/semiconductor Singles/MNAS/MNAS/MNAS/MNAS/MNAS/MNAS/MNAS/MNAS/MNAS/MNAS/SINAS/SINAS/SI（00l）。 GAAS/MNA Ferromagnet/半导体Trilayer HSS在GAAS（111）B（111）B和Si（111）底物上通过分子梁外稳定（MBE）。尽管晶体结构，化学键合，电子和磁性特性不同，但通过电子显微镜进行的横截面图像表明，HSS是按照相当光滑且原子上突然的接口形成的。在Trilayer HSS中，由于顶部和底部MNA层之间的强制性差异，在磁化特性中观察到了双步特征。当GAAS间隔层的厚度为5-10 nm时，层间耦合几乎没有。我们还研究了（GAMN）作为薄膜和（GAMN）AS/A1AS量子HSS的外延生长和（GAMN）的特性，而低温MBE生长。（GAMN）和新的基于III -V的磁合金半导体一样，其中包含大量Mn原子（高达-8％），远高于GAAS中Mn的平衡溶解度极限。我们表明，准备此类基于III-V的铁磁半导体及其HSS的可行性在III-V系统的材料设计中具有新的自由度，以及使用III-II-II-II-II-II-V的设备应用程序的应用程序应用。 v半导体。