Development of Low-Temperature Processes for High-Temperature Intermetallic Compounds and their microstructure control

高温金属间化合物低温工艺开发及其微观结构控制

• 批准号: 07555228
• 负责人: MARUYAMA Toshio
• 金额: $ 3.9万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555228/
• 关键词: Mo(Si, Al)_2; Nb(Si, Al)_2; Nb(Al, Si)_3; intermetallic compounds; hot dipping; self-propagation; liquid-phase reactive sintering; 低温合成; 高温酸化; 表面コーティング

(1) DIP COATING OF Nb BY USING Al-Si LIQUIDBy dipping of Nb in Si-saturated Al liquid at temperatures from 940 K to 1140 K,C40-type Nb(Si_<0.9>, Al_<0.1>)_2 layr formed at the interface on Nb. The intermetallic layr consisted of fine particles with submicrons in diameter and included Al-Si liquid between particles. The growth of Nb(Si, Al)_2 layr was rate-controlled by the dissolution-precipitation reaction at the Nb/Nb(Si, Al)_2 interface. The growth rate of Nb(Si, Al)_2 was 3 times faster than that of Mo(Si, Al)_2 in the Mo dipping.In the dipping of Nb in non-saturated Al-Si liquid at 1025 K,C40-type Nb(Si, Al)_2 formed with Al-23 mol% Si liquid. The growth rate was faster than that in the case of the saturated Al-Si liquid. Product layr by dipping Nb in Al-Si liquid with around 20 mol% Si exhibited the layr-by-layr structure consisting of C40-type Nb(Si, Al)_2 and D0_<22>-type Nb(Al, Si)_3. With decreasing Si content down to 5 mol% in Al-Si liquid, the product layr consisted of the … More D0_<22>-type Nb(Al, Si)_3. Their results imply that C54-type Nb(Si, Al)_2 does not exist in the Nb-Si-Al system at 1025 K.(2) MECHANISM OF DIP COATING USING Al-Si LIQUID :By dipping Mo in Si-saturated Al liquid, C40-type Mo(Si, Al)_2 layr formed on Mo. The C40-type intermetallic layr was comprised of needle-like Mo(Si, Al)_2 grains with Al-Si liquid at grain boundary. The needle-like grains grow by dissolution-precipitation process through Al-Si liquid at the interface between Mo(Si, Al)_2 and Mo.The mechanism of the growth of C40-type intermetallic layr is the dissolution-precipitation process through Al-Si liquid at the interface between Mo or Nb and the product layr. The difference of grain shape on Mo(Si, Al)_2 and Nb(Si, Al)_2 is discussed with the phase relation and supply and consumption of Al and Si from the liquid phase in the interface. The formation of the layr-by-layr structure in the Nb dipping was explained by the consumption of Al and Si with different ratios for D0_<22> and C40.(3) DEVELOPMENT OF CRACK=FREE COATING BY DIPPING USING Al-Si LIQUIDAddition of Cr, Nb, Ta and Ti in Al-Si liquid was carried out in order to prevent the formation of cracks of Mo(Si, Al)_2 layr on Mo surface with large curvature. The dipping of MO into Al-Si-Cr liquid leads to the formation of the crack-free layr. In the dipping with Al-Si-Cr liquid, (Cr, Mo) (Si, Al)_2 grains formed on the Mo(Si, Al)_2 layr. There is no change ofthe chemical composition and the growth rate of Mo(Si, Al)_2 by addition of Cr in Al-Si liquid.(4) LIQUID-PHASE REACTIVE SINTERING OF Mo-Si-Al POWDER MIXTURELiquid-phase reactive sintering of Mo-Si-Al powdr mixture were investigated. In the powder mixture with high Al content, self-propagation reaction occurred and Mo(Si, Al)_2 formed. The sintered bodies have porous structure. Less

（1）通过使用al-Si液体液在温度从940 K到1140 K，C40型NB（si_ <0.9>，al_ <0.1>）的温度下，将Nb浸入NB，在SI饱和的Al液体中浸入liquation _ 2。金属间的Layr由直径为直径的细颗粒组成，并包括颗粒之间的Al-Si液体。 NB（SI，AL）_2 Layr的生长是由NB/NB（SI，AL）_2接口的溶解性反应反应速率控制的。 NB（Si，al）_2的生长速率比Mo浸入中的Mo（Si，al）_2的生长速率快3倍。在1025 K，C40型NB（SI，AL）_2中，NB在非饱和Al-SI液体中的浸入中，用Al-23 mol％Si Si Si液体形成。在饱和的Al-Si液体的情况下，生长速度要快。通过将NB浸入AL-SI液体中，乘积layr，约20 mol％Si暴露了由C40型NB（SI，AL）_2和D0_ <22> -Type Nb（Al，Si）_3组成的逐层结构。随着Si含量降低至5 mol％的Al-Si液体，产物LAYR由…更多D0_ <22> -Type nb（Al，Si）_3组成。他们的结果表明，在1025 K处的NB-Si-AL系统中，C54型NB（SI，Al）_2不存在。（2）使用Al-Si液体的浸入涂层机制：通过在Si饱和的Al液体中浸入Mo，C40型MO（si，al）_2 layr在Mo.c40型Layr中形成了CONILE。 mo（si，al）_2晶粒在晶界处具有Al-Si液体。针状晶粒通过在Mo（Si，Al）_2和Mo之间的界面和MO之间的界面上通过溶解液化过程而生长。C40型金属间层层的生长机理是通过MO或NB和产品Layr之间的界面上的Al-Si液体通过Al-Si液体进行的溶出性溶解过程。讨论了Mo（Si，al）_2和Nb（Si，al）_2上晶粒形状的差异，并与界面中液相的Al and Si的相位关系，供应和消耗进行了讨论。 The formation of the layr-by-layr structure in the Nb dipping was explained by the consumption of Al and Si with different ratios for D0_<22> and C40.(3) DEVELOPMENT OF CRACK=FREE COATING BY DIPPING USING Al-Si LIQUIDAddition of Cr, Nb, Ta and Ti in Al-Si liquid was carried out in order to prevent the formation of cracks of Mo(Si, Al)_2 layr on Mo surface with large曲率。将MO浸入AL-SI-CR液体会导致形成无裂纹的Layr。在用Al-Si-Cr液体的浸入中，（Cr，Mo）（Si，al）_2粒子在Mo（Si，al）_2 layr上形成。通过在Al-Si液体中添加Cr的Mo（Si，al）_2的化学成分和生长速率没有变化。（4）MO-SI-AL粉末混合液相结合的液相反应性烧结研究了Mo-Si-Al粉末混合物的反应性烧结。在具有高含量的粉末混合物中，发生自传播反应，并形成Mo（Si，al）_2。烧结的身体具有多孔结构。较少的

项目成果

鎌田 弘之: "MoとAl-Si-X融体(X=Cr,Nb,Ta,Ti)との反応により生成するMo(Si,Al)2の組織とその制御" 1998年春期(第121回)大会日本金属学会講演概要. (1998)

Hiroyuki Kamata：“Mo和Al-Si-X熔体反应形成的Mo(Si,Al)2的结构和控制（X=Cr,Nb,Ta,Ti）”1998年春季（第121次会议））会议摘要日本金属研究所讲座（1998）。

南口 誠: "Si飽和Al融体中のNbおよびMo上に生成したダイシリサイドの微細組織" 1996年秋期(第121回)大会日本金属学会講演概要. 396- (1997)

Makoto Minamiguchi：“硅饱和铝熔体中 Nb 和 Mo 上形成的二硅化物的微观结构”日本金属学会 1996 年秋季（第 121 届）会议的演讲摘要 396-（1997 年）。

M.Nanko: "Microstructure of Disilicides Formed on Nb or Mo in Si saturated Al Liquid" Abst.1996 Fall Meeting of Japan Institute of Metals. 396 (1996)

M.Nanko：“硅饱和铝液中 Nb 或 Mo 上形成的二硅化物的微观结构”Abst.1996 年日本金属学会秋季会议。

高橋明男: "Si飽和Al融体を用いた超高温金属間化合物の合成" 1996年春期(第118回)大会日本金属学会講演概要. 90 (1996)

Akio Takahashi：“使用硅饱和铝熔体合成超高温金属间化合物”1996 年春季（第 118 届）日本金属学会会议摘要 90（1996）。

M. Nanko: "Formation of Intermetallic Compounds on Refractory Metals in Aluminum-Silicon Liquid" Abst.of the 3rd Okinaga Symp.Mater.Sci.Eng.Serving Soc.46- (1997)

M. Nanko：“在铝硅液体中难熔金属上形成金属间化合物” Abst.of the 3rd Okinaga Symp.Mater.Sci.Eng.Serving Soc.46- (1997)