Development of a Local-Surface-Analysis Apparatus with Micro-Electron Beam and Retarding Two-Dimensional Display Type Electron Analyzer

微电子束及延迟二维显示型电子分析仪局部表面分析仪的研制

• 批准号: 07554051
• 负责人: KONO Shozo
• 金额: $ 1.6万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07554051/
• 关键词: MICRO-ELECTRON BEAM; AUGER ELECTRON DIFFRACTION; MEDIUM ENERGY ELECTRON DIFFRACTION; TWO-DIMENSIONAL DISPLAY ELECTRON ENERGY ANALYZER; SURFACE ANALYSIS APPARATUS; オ-ジエ電子回折; MICRO-ELECTRON BEAM; AUGER ELECTRON DIFFRACTION; MEDIUM ENERGY ELECTRON DIFFRACTION; TWO-DIMENSIONAL DISPLAY ELECTRON ENERGY ANALYZER; SURFACE ANALYSIS APPARATUS; オ-ジエ電子回折

We have developed an apparatus suitable for analyzing structures and chemical compositions of local surfaces. This apparatus is composed of a micro-electron beam and a retarding-field two-dimensional display-type electron energy analyzer (RDA analyzer) and called mu-GBMEED ; abbreviation for Grazing-incidence Backscattering Medium Energy Electron Diffraction. The method of GBMEED has been invented by the head investigator in which a monochromatic electron beam of an energy of 1 to 3 keV is incident on a specimen surface at a grazing angle and elastically scattered electrons along backward direction are analyzed by the RDA analyzer. This dives us a so-called mu-GBMEED pattern. By analyzing this pattern, structural and compositional information about local surface of an order of -0.1 mum can be obtained. The apparatus has been realized by combining a commercial mu-electron beam gun and a home-made RDA analyzer on a specially designed ultrahigh vacuum chamber. Signals from the RDA analyzer are recorded with a CCD-camera system which mu-GBMEED patterns with a wide-solid angle can be efficiently stored in a computer memory. The apparatus is also combined with a UHV-STM system, so that atomic-scale STM images on the same specimen surface can be measured and used as a guide for thr analysis by mu-GBMEED.As a test of the apparatus, we have investigated a Si (001) surface in order to determine the backling angle of the buckled Si-dimers wich are known to be present. The buckling angle is reported to be about 19^ﾟ but is not so certain. A single domain Si (001) 2x1 surface was investigated with mu-electron beam at 1 to 2 KeV and mu-GBMEED patterns were recorded. With the aid of presently developed single-scattering method for GBMEED,a forward-scattering diffraction feature was found. However, the quality of the pattern was not good enough to finally determine the buckling angle. We are in the stage of improving the quality of GBMEED patterns by several means.

我们开发了一种适用于局部表面的分析结构和化学组成的设备。该设备由微电子束和阻滞场二维显示型电子能量分析仪（RDA分析仪）组成，称为MU-GBMEED；放牧降低反向散射中等能电子衍射的缩写。 GBMEED的方法是由头部研究者发明的，其中1至3 KEV的能量的单色电子束以梯度角入射在样品表面上，并通过RDA分析仪分析了沿向后方向的弹性散射的电子。这为我们潜入了所谓的MU-GBMEED模式。通过分析这种模式，可以获得有关-0.1妈妈的局部表面的结构和复合信息。通过将商业Mu-Electron Beam Gun和一个自制的RDA分析仪组合在特殊设计的超高真空室中，可以实现该设备。 RDA分析仪的信号是使用CCD相机系统记录的，该系统具有宽角度角度的MU-GBMEED模式，可以有效地存储在计算机存储器中。该设备还与UHV-STM系统相结合，因此可以测量同一试样表面上的原子尺度的STM图像，并将其用作由MU-GBMEED进行的指南。作为对设备的测试，我们已经研究了SI（001）的表面，以确定已知的SI-Dimers-Dimers weS wess wess wess wece sie si的表面。据报道，屈曲角约为19^ﾟ，但不太确定。用Mu-Electron束在1至2 keV中研究了单个域Si（001）2x1表面，并记录了MU-GBMEED模式。借助目前开发的GBMEED单碎片方法，发现了前散射的衍射功能。但是，图案的质量不足以最终确定屈曲角。我们正处于通过几种方式提高GBMEED模式质量的阶段。