Development of Superhigh-Frequency Electromagnetic-Wave Detectors Using Grain-Boundary Junctions of BKBO

利用 BKBO 晶界结开发超高频电磁波探测器

基本信息

  • 批准号:
    07505014
  • 负责人:
  • 金额:
    $ 3.26万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
  • 财政年份:
    1995
  • 资助国家:
    日本
  • 起止时间:
    1995 至 1996
  • 项目状态:
    已结题

项目摘要

Ba_<1-x>K_xBiO_3(BKBO)grain-boundary junctions fabricated on bicrystal substrates are Josephson tunnel junctions which show the SIS (superconductor-insulator-superconductor) feature. A highly-sensitive sensor for superhigh-frequency electromagnetic-waves is a candidate for the application of these junctions, utilizing the gap energy of BKBO wider than those of metal superconductors. In this research, we intended to develop the SIS mixers for the detection of super high-frequency electromagnetic waves using BKBO grain-boundary junctions, and studies on the use of low-permitivity substrates, the improvement of junction properties and the development of junction integration technology (high-frequency circuits) were carried out.1. Establishment of the technology for the deposition of BKBO thin films on low-permittivity substrates :In order to establish the technology for the deposition of thin films on low-permittivity substrates necessary for high-frequency application, we tried to prepar … More e BKBO thin films on Mg (permittivity : 10). Since the deposition of BKBO thin films of high quality on MgO is more difficult than on SrTiO_3 (STO), we investigated the effect of the substrate treatment, buffer layrs, etc. It was found that the in-situ annealing of the substrate before the deposition in the sputter chamber is effective, and BKBO films which shows properties similar to those on STO were obtained. A buffer BKBO layr deposited at a high substrate temperature for a short time prior to the deposition at the normal temperature for superconducting films gives a (100) BKBO film of high quality on (100) MgO substrate.2. Investigation of junction properties :We investigated the properties of the junctions on STO.The velocity of the electromagnetic wave in the barrier of the junction is an order smaller than that reported for junctions of other materials, which suggests the effect of the high permittivity of the substrate and the necessity of low-permittivity substrates.3. Study of high-frequency circuits :We studied the circuits for the basic experiments of the superhigh-frequency detector including junctions and other components such as antennas, etc. Less
在双晶衬底上制造的Ba_<1-x>K_xBiO_3(BKBO)晶界结是约瑟夫森隧道结,其表现出SIS(超导体-绝缘体-超导体)特征,是一种用于超高频电磁波的高灵敏度传感器的候选者。对于这些结的应用,我们打算利用比金属超导体更宽的 BKBO 间隙能量来开发。利用BKBO晶界结探测超高频电磁波的SIS混频器,以及低介电常数衬底的使用、结性能的改善和结集成技术(高频电路)的开发等研究1. 低介电常数衬底上沉积BKBO薄膜的技术的建立:为了建立在低介电常数衬底上沉积薄膜的技术由于在 MgO 上沉积高质量的 BKBO 薄膜比在 SrTiO_3 (STO) 上沉积更困难,因此我们尝试在 Mg 上制备 e BKBO 薄膜(介电常数:10)。研究发现,在溅射室中沉积之前对衬底进行原位退火是有效的,并且BKBO薄膜表现出与STO类似的性能获得了在常温沉积超导薄膜之前在高基底温度下短时间沉积的缓冲BKBO层,在(100)MgO基底上得到了高质量的(100)BKBO薄膜。 2.特性:我们研究了 STO 上结的特性。结势垒中的电磁波速度比其他材料结的报告小一个数量级,这表明高介电常数的影响3.高频电路的研究:研究了超高频探测器基础实验的电路,包括结点和天线等其他部件。

项目成果

期刊论文数量(1)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
S. Imaeda: "Ba_<1-x>K_xBiO_3 Grain Boundary Junctions Prepared on SrTiO_3 Bicrystal Substrates" IEEE Trans. Appl. Supercond.5. 2208-2211 (1995)
S. Imaeda:“Ba_<1-x>K_xBiO_3 在 SrTiO_3 双晶基底上制备的晶界结”IEEE Trans。
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HAYAKAWA Hisao其他文献

HAYAKAWA Hisao的其他文献

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{{ truncateString('HAYAKAWA Hisao', 18)}}的其他基金

Theoretical studies on correlation effects and non-equilibrium phase transitions for high density particles systems
高密度粒子体系相关效应和非平衡相变的理论研究
  • 批准号:
    21540384
  • 财政年份:
    2009
  • 资助金额:
    $ 3.26万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Kinetic approach to nonequilibrium statistical mechanics
非平衡统计力学的动力学方法
  • 批准号:
    18540371
  • 财政年份:
    2006
  • 资助金额:
    $ 3.26万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Fundamental research on dynamics of dissipative particles
耗散粒子动力学基础研究
  • 批准号:
    15540393
  • 财政年份:
    2003
  • 资助金额:
    $ 3.26万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Enhancement of the Quality of Stacked-type High-Tc Josephson Junctions by Doping and Development of the Integration Technology for These Junctions
通过掺杂提高堆叠型高温约瑟夫森结的质量及其集成技术的发展
  • 批准号:
    14350185
  • 财政年份:
    2002
  • 资助金额:
    $ 3.26万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
A Study on Josephson Junctions with Controlled Barrier Layrs Operating at 10 K for Integrated Circuit Application
集成电路应用中工作温度为 10 K 的可控势垒层约瑟夫森结的研究
  • 批准号:
    09305026
  • 财政年份:
    1997
  • 资助金额:
    $ 3.26万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Studies on the Bi System Josephson Junctions with High Criteical Temperature
高临界温度Bi系约瑟夫森结的研究
  • 批准号:
    07455138
  • 财政年份:
    1995
  • 资助金额:
    $ 3.26万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of waveform observation system with 1ps time resolution and 100 micron specific resolution
开发1ps时间分辨率、100微米特定分辨率的波形观测系统
  • 批准号:
    02555080
  • 财政年份:
    1990
  • 资助金额:
    $ 3.26万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
Investigation and Applications of New Electronic Phenomena in the Composite Devices of Supercomductors and Semiconductors.
超导与半导体复合器件中新电子现象的研究与应用。
  • 批准号:
    62420020
  • 财政年份:
    1987
  • 资助金额:
    $ 3.26万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (A)
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