STUDY ON NANO-INPROCESS MEASUREMENT OF SILICON WAFER SURFACE DEFECTS

硅片表面缺陷的纳米加工测量研究

• 批准号: 07455064
• 负责人: MIYOSHI Takashi
• 金额: $ 4.29万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07455064/
• 关键词: Silicon wafer; Surface defects inspection; Laser applied measurement; Contamination; In-process measurement; Nano-technology; Photorefractive crystal; BSO crystal; 表面欠陥; Fraunhofer回折; ミ-散乱; BSO; 超精密

The detection of silicon wafer surface defects is a very important aspect in the continued improvement of the yield and reliability of manufactured devices. The current methods for measuring particulate contamination on surfaces are divided into two general types : (i) manual particle counting, by naked eye or with a microscope, of the light scattered under the illumination of an intense white light source ; (ii) automatic particle counting with a commercially available instrument that uses a He-Ne or He-Cd laser. The manual method does not allow for accurate particle sizing ; the second method does not allow examination of surface defects and particles. For LSI in next generation, these disadvantages are big problems. So, this report describes on development of a new optical measuring method applied to the nano-inprocess measurement of imperfections such as COP,particle, and so on without disadvantages mentioned above. The results obtained in this study are summarized as follows ;Firs … More t, we developed a new optical measuring system, consisting of an Ar laser and the objective lens of high magnification, which can quantitatively evaluate the imperfections by detecting the laser scattered defect patterns. It can be seen that an isolated particle of 0.212,0.605, and 1.16mum was able to be detected clearly as the Laser Scattered Defect Patterns. By measuring the first ring diameter of the Laser Scattered Defect Pattern, the particle size can be evaluated. This method has a feasibility to discriminate the imperfections by making the use of the characteristic of the Laser Scattered Defect Pattern.Second, in order to apply this method to the in-process measurement, we detected the Laser Scattered Defect Pattern not with CCD area sensor but with a photorefractive BSO crystal. we proposed to applied a photorefractive BSO crystal to a volume holographic storage of the Laser Scattered Defect Patterns, which were detected during the inspection of the silicon wafer surface. In order to verify the feasibility of our proposed method, the basic experiment was carried out. As a result, it takes only 10 msec to record a Laser Scattered Defect Pattern in a BSO crystal. Multiple holograms can be recorded in one photorefractive crystal using spatial multiplexing techniques and 5 holograms can be recorded in a BSO crystal (7mm*7mm*3mm). Less

硅晶片表面缺陷的检测是持续提高制造设备的产量和可靠性的一个非常重要的方面。目前测量表面颗粒污染的方法分为两种一般类型：（i）手动颗粒计数，裸露法。 (ii) 使用 He-Ne 或 He-Cd 激光器的市售仪器进行自动颗粒计数。准确的粒径；第二种方法不允许检查表面缺陷和颗粒，对于下一代LSI来说，这些缺点是大问题，因此，本报告描述了一种应用于纳米过程中缺陷测量的新光学测量方法，例如COP、没有上述缺点，本研究获得的结果总结如下；首先，我们开发了一种新的光学测量系统，由Ar激光器和高倍率物镜组成，可以定量测量。评估缺陷检测激光散射缺陷图案可以看出，0.212、0.605和1.16μm的孤立颗粒能够被清晰地检测为激光散射缺陷图案。该方法具有利用激光散射缺陷图案的特征来判别缺陷的可行性。将此方法应用于过程中测量，我们不使用CCD区域传感器而是使用光折变BSO晶体来检测激光散射缺陷图案，我们建议将光折变BSO晶体应用于激光散射缺陷图案的体全息存储。为了验证我们提出的方法的可行性，进行了基础实验，结果只需要10毫秒即可记录。 BSO 晶体中的激光散射缺陷图案。使用空间复用技术可以在一个光折变晶体中记录多个全息图，并且可以在一个 BSO 晶体（7mm*7mm*3mm）中记录 5 个全息图。

项目成果

Satoru TAKAHASHI,Takashi MIYOSHI,Yasuhiro TAKAYA: "Study on Nano-inprocess Measurement of Silicon Wafer Surface Defects by Laser Scattered Defect Pattern" Proceedings of ISMTII '96 Hayama, JAPAN. 243-250 (1996)

Satoru TAKAHASHI、Takashi MIYOSHI、Yasuhiro TAKAYA：“通过激光散射缺陷图案对硅晶片表面缺陷进行纳米过程测量的研究”ISMTII 96 Hayama 论文集，日本。

高橋哲,三好隆志,高谷裕浩,吉田晴彦,立野泰史,濱田守: "シリコンウェハ加工表面欠陥のナノインプロセス計測に関する研究(第6報)-付着微粒子の検出パターンの発生メカニズムの検討-" 1997年度精密工学会春季大会学術講演論文集. 東京. 393-394 (1997)

Tetsu Takahashi、Takashi Miyoshi、Hirohiro Takatani、Haruhiko Yoshida、Yasushi Tateno、Mamoru Hamada：《硅晶圆加工表面缺陷的纳米过程测量研究（第六次报告）——附着微粒检测图案生成机制的检验-”1997 年日本精密工程学会春季会议论文集。东京。393-394 (1997)

Satoru TAKAHASHI,Takashi MIYOSHI,Yasuhiro TAKAYA,Takanori OKITA: "Study on Nano-inprocess Measurement of Silicon Wafer Surface Defects (3rd Report) -Identification with Particles Observed by SEM-" Proceedings of 1995 JSPE general meeting in autumn. 547-54

Satoru TAKAHASHI、Takashi MIYOSHI、Yasuhiro TAKAYA、Takanori OKITA：“硅片表面缺陷的纳米过程测量研究（第三次报告）-用SEM观察到的颗粒进行识别-”1995年秋季JSPE会员大会论文集。

Satoru TAKAHASHI,Takashi MIYOSHI,Yasuhiro TAKAYA,Yasuhumi TATSUNO: "Study on Nano-inprocess Measurement of Silicon Wafer Surface Defects (5th Report) -Discrimination of Silicon Wafer Surface Defects-" Proceedings of 1996 JSPE general meeting in autumn. 42

Satoru TAKAHASHI、Takashi MIYOSHI、Yasuhiro TAKAYA、Yasuhumi TATSUNO：“硅片表面缺陷的纳米过程测量研究（第5次报告）-硅片表面缺陷的判别-”1996年JSPE秋季会员大会论文集。

T. Miyoshi, Y. Takaya, K. Saito: "Nanometer measurement of silicon wafer surface texture based on Fraunhofer diffraction pattern" Annals of the CIRP. 44/1. 489-492 (1995)

T. Miyoshi、Y. Takaya、K. Saito：“基于弗劳恩霍夫衍射图样的硅晶片表面纹理的纳米测量” CIRP 年鉴。