Development of High Conductive ITO Films by Controlling Their Orientation

通过控制取向开发高导电 ITO 薄膜

• 批准号: 06555181
• 负责人: YASUI Itaru
• 金额: $ 3.46万
• 依托单位: UNIVERSITY OF TOKYO
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06555181/
• 关键词: ITO; Thin film; Orientation; Sputtering; ZnO; heteroepitaxial growth

<111> oriented tin-doped indium oxide (ITO) films were deposited by rf magnetron sputtering on ZnO-coated glass substrates (ZnO/glass). The ZnO underlayrs were also deposited by rf magnetron sputtering and have been known to exhibit <001> preferred orientation in a wide range of deposition conditions. The X-ray diffraction profiles of the ITO films deposited on the ZnO/glass showed predominant <111> orientation without any differently oriented crystallites, whereas the ITO films deposited on bare glass substrates (ITO/glass) under the same deposition conditions showed <100>-preferred orientation with small areas of several other orientations. A mechanism of the heteroepitaxial growth of In2O3 (111) **ZnO (001) was explained by comparing the atomic configurations of oxygen between the oxygen mostly densepacked planes Of In2O3 and ZnO parallel to In2O3 (111) and ZnO (001) planes, respectively. Sn concentrations and lattice constants of the <111> oriented films (ITO/ZnO/glass) were found to be greater than those of <100> preferred oriented films (ITO/glass) in spite of the fact that the target and deposition conditions were the same, which could be associated with the electrical properties of the films.

<111>定向锡掺杂的氧化物（ITO）膜通过RF磁控溅射在ZnO涂层玻璃基板（ZnO/Glass）上沉积。还通过RF磁控溅射沉积ZnO底层，并已知在广泛的沉积条件下表现出优选方向。沉积在ZnO/玻璃上的ITO膜的X射线衍射轮廓显示出主要的<111>方向，而没有任何不同取向的晶体，而在相同的沉积条件下沉积在裸露的玻璃基板（ITO/玻璃）上的ITO膜显示出<100 <100 > - 优先取向，具有其他几个方向的小面积。通过比较氧气之间的氧原子构型，分别是含氧于2o3和ZnO平行于2o3（111）和ZnO（001）平面，从而解释了In2O3（111）** ZnO（111）** ZnO（001）的杂增生长的机制。 。发现<111> <111>的SN浓度和晶格常数（ITO/ZnO/Glass）大于<100>首选膜（ITO/玻璃）的SN浓度和晶格常数，尽管目标和沉积条件是<100>首选的膜（ITO/玻璃）相同，可能与膜的电性能有关。

项目成果

Choong Hoon Yl, Itaru YASUI,Yuzo SHIGESATO: "Effect of Tin Concentrations on Structural Characteristics and Electropical Properties of Tin-Doped Indium Oxide Films Prepared by RF Magnetron Sputtering." Jpn.J.Appl.Phys. 34. 600-605 (1995)

Choong Hoon Yl、Itaru YASUI、Yuzo SHIGESATO：“锡浓度对射频磁控溅射制备的锡掺杂氧化铟薄膜的结构特性和电性能的影响”。

Yuzo SHIGESATO,Itaru YASUI: "Use of low-temperature processing to deposit low-resistivity ITO films." OUYOU BUTSURI. 64 (12). 1225-1229 (1995)

Yuzo SHGESATO、Itaru YASUI：“利用低温处理沉积低电阻率 ITO 薄膜。”

重里 有三: "低比抵抗ITOの低温成膜" 応用物理. 64(12). 1225-1229 (1995)

Yuzo Shigesato：“低电阻率 ITO 的低温沉积”应用物理学 64(12) (1995)。

Chun-Hun Yi: "The effect of Tin concentrations on structual characteristics and electrooptical properties of Indium Tin Oxide prepared by RF magnetron sputtering" Japanese Journal Applied Physics. 34(2A). (1995)

Chun-Hun Yi：“锡浓度对射频磁控溅射制备的氧化铟锡的结构特征和电光性能的影响”日本应用物理杂志。

Choong Hoon Yi, Itaru Yasui Yuzo Shigesato,Satoru Takaki: "Microstructure of low resistivity Tin-doped Indium Oxide films deposited at 150-200C" Japanese. Journal of Applied Physics.

Choong Hoon Yi、Itaru Yasui Yuzo Shigesato、Satoru Takaki：“150-200C 下沉积的低电阻率掺锡氧化铟薄膜的微观结构”，日语。