Developmental Research on Large Area Growth of Ferroelectric Thin Films with a High Growth Rate by MOCVD and Their Applications to Memory Device

MOCVD大面积高生长率铁电薄膜生长研究及其在存储器件中的应用

基本信息

批准号：
06555094
负责人：
SHIOSAKI Tadashi
金额：
$ 3.26万
依托单位：
KYOTO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

项目摘要

A 6-8 inch single wafer type MOCVD system for ferroelectric thin films was developed. Large area growth of Pb (Zr, Ti) 03 (PZT) and (Pb, La) (Zr, Ti) 03 (PLZT) thin films was performed by MOCVD on a 6-8 inch Si wafer. Highly uniform PZT thin films with a variation in film thickness of less than <plus-minus>1.2% were successfu lly grown on a 6-8 inch wafer. The variations in the Pb, Zr and Ti components were of less than <plus-minus>0.8, <plus-minus>0.8 and <plus-minus>1.1%, respectively. PZT films with variation in dielectric constant of less than <plus-minus>5.1% were also obtained on a 6 inch wafer. On a 6 inch wafer. PLZT films with a variation in film thickness of less than <plus-minus>1.5% were also grown. The growth rate of PZT and PLZT films was 30-40/min, which was not enough for the realization of the practical production of memory devices. In order to obtain the high growth rate, an improvement in the shape of gas nozzle shouldThe electrical properties of PZT thin films grown on Ir, IrO_2 and Ir/IrO_2 bottom electrodes and the effects of various top electrode materials on the electrical properties of these PZT films were investigated. The PZT thin film capacitors using Ir and IrO_2 electrodes showed no fatigue up to a switching cycle of 10^<11>. It was also found that annealing process after forming the upper electrode was one of key factors in determining the fatigue characteristics.

开发了一种6-8英寸的单晶片型MOCVD系统，用于铁电薄膜。 MOCVD在6-8英寸的Si晶圆上进行了PB（ZR，TI）03（PZT）和（PB，LA）（Zr，Ti）03（Zr，Ti）03（PLZT）薄膜的大面积生长。高度均匀的PZT薄膜，膜厚度的变化小于<plus-minus> 1.2％，是在6-8英寸晶圆上生长的成功粉丝。 Pb，Zr和Ti组件的变化分别小于<plus-minus> 0.8，<plus-minus> 0.8和<plus-minus> 1.1％。在6英寸的晶圆上也获得了介电常数变化的PZT膜小于<plus-minus> 5.1％。在6英寸的晶圆上。膜厚度的变化小于<plus-minus> 1.5％的PLZT膜也已增长。 PZT和PLZT膜的增长率为30-40/min，这还不足以实现记忆设备的实际生产。为了获得高增长率，研究了在IR，IRO_2和IR/IRO_2底部电极上生长的PZT薄膜的电气性能以及各种顶部电极材料对这些PZT膜电气性能的影响。使用IR和IRO_2电极的PZT薄膜电容器显示出疲劳，直至10^<11>的开关周期。还发现，在形成上电极后退火过程是确定疲劳特征的关键因素之一。