Developmental Research on Large Area Growth of Ferroelectric Thin Films with a High Growth Rate by MOCVD and Their Applications to Memory Device

MOCVD大面积高生长率铁电薄膜生长研究及其在存储器件中的应用

• 批准号: 06555094
• 负责人: SHIOSAKI Tadashi
• 金额: $ 3.26万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06555094/
• 关键词: MOCVD; PZT; PLZT; large area growth; thin film; uniformity; memory device; fatigue; 面内均一性; 均一成長; PZT薄膜; PLZT薄膜; 均一膜; 膜厚分布; 組成分布; 成長速度

A 6-8 inch single wafer type MOCVD system for ferroelectric thin films was developed. Large area growth of Pb (Zr, Ti) 03 (PZT) and (Pb, La) (Zr, Ti) 03 (PLZT) thin films was performed by MOCVD on a 6-8 inch Si wafer. Highly uniform PZT thin films with a variation in film thickness of less than <plus-minus>1.2% were successfu lly grown on a 6-8 inch wafer. The variations in the Pb, Zr and Ti components were of less than <plus-minus>0.8, <plus-minus>0.8 and <plus-minus>1.1%, respectively. PZT films with variation in dielectric constant of less than <plus-minus>5.1% were also obtained on a 6 inch wafer. On a 6 inch wafer. PLZT films with a variation in film thickness of less than <plus-minus>1.5% were also grown. The growth rate of PZT and PLZT films was 30-40/min, which was not enough for the realization of the practical production of memory devices. In order to obtain the high growth rate, an improvement in the shape of gas nozzle shouldThe electrical properties of PZT thin films grown on Ir, IrO_2 and Ir/IrO_2 bottom electrodes and the effects of various top electrode materials on the electrical properties of these PZT films were investigated. The PZT thin film capacitors using Ir and IrO_2 electrodes showed no fatigue up to a switching cycle of 10^<11>. It was also found that annealing process after forming the upper electrode was one of key factors in determining the fatigue characteristics.

开发了6-8英寸单晶圆式铁电薄膜MOCVD系统。通过MOCVD在6-8英寸Si晶片上进行Pb(Zr,Ti)03(PZT)和(Pb,La)(Zr,Ti)03(PLZT)薄膜的大面积生长。在6-8英寸晶圆上成功生长出高度均匀的PZT薄膜，膜厚变化小于正负1.2%。 Pb、Zr 和 Ti 成分的变化分别小于<正负>0.8、<正负>0.8 和<正负>1.1%。在6英寸晶片上还获得了介电常数变化小于正负5.1%的PZT薄膜。在 6 英寸晶圆上。还生长了膜厚度变化小于±1.5%的PLZT膜。 PZT和PLZT薄膜的生长速率为30-40/min，不足以实现存储器件的实际生产。为了获得高生长速率，应改进气体喷嘴的形状。在Ir、IrO_2和Ir/IrO_2底电极上生长的PZT薄膜的电性能以及各种顶电极材料对这些PZT电性能的影响电影进行了调查。使用Ir和IrO_2电极的PZT薄膜电容器在高达10^<11>的开关周期内没有表现出疲劳。还发现形成上电极后的退火工艺是决定疲劳特性的关键因素之一。

项目成果

Tadashi Shiosaki: "Large Area Growth of Pb(Zr,Ti)O_3 Thin Films by MOCVD" Integruted Ferroelectrics. 5. 39-45 (1994)

Tadashi Shiosaki：“通过 MOCVD 大面积生长 Pb(Zr,Ti)O_3 薄膜”集成铁电体。

Masaru Shimizu: "Properties of Ferroelectric (Pb,La)(Zr,Ti)O_3 Thin Films by MOCVD" Integrated Ferroelectrics. 10. 23-30 (1995)

Masaru Shimizu：“MOCVD 铁电 (Pb,La)(Zr,Ti)O_3 薄膜的特性”集成铁电体。

Masaru Shimizu: "MOCVD of Ferroelectric PLZT Thin Films and Their Properties" Microelectronic Engineering. 29. 173-176 (1995)

Masaru Shimizu：“铁电PLZT薄膜的MOCVD及其性能”微电子工程。

T.Shiosaki: "Metalorganic Chemical Vapor Deposition of Ferroelectric Pb (Zr, Ti) O_3 Thin Films" Integrated Ferroelectrics. 9. 13-20 (1995)

T.Shiosaki：“铁电Pb(Zr,Ti)O_3薄膜的金属有机化学气相沉积”集成铁电体。

Masaru Shimizu: "Control of Orientation of Pb(Zr,Ti)O_3 Thin Films Lising PbTiO_3 Butter Layer" Jpn.J.Appl.Phys.33. 5167-5171 (1994)

Masaru Shimizu：“控制 Pb(Zr,Ti)O_3 薄膜 Lising PbTiO_3 黄油层的取向”Jpn.J.Appl.Phys.33。