Fabrication of ULSI highly Functional Thin Film employing High Rate and High Uniformity Digital CVD

采用高速率和高均匀性数字 CVD 制造 ULSI 高功能薄膜

• 批准号: 05555089
• 负责人: HORIIKE Yasuhiro
• 金额: $ 11.71万
• 依托单位: Toyo University (1994-1995)Hiroshima University (1993)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05555089/
• 关键词: Digital CVD; ULSI; High quality thin film; Multi-layr Atacked Interlayr; Conformable CVD; Low dielectric constant film; Time-modulated plasma; Bias sputtering; デジタル法; 誘導結合プラズマ; 高アスペクト比構造; 高速成膜; トリエチルシラン; 低誘電率薄膜

The goal of this study was to establish the digital CVD technology of the ULSI thin films which required filling to increasingly high aspect ratio gap/hole and high performance. The basic process is carried out by the atomic level repetition of one fundamental process of first adsorption of the deposition precursor and subsequently improvement of the film quality and their reactions such as oxidation with active species. At first, the multi-layr Si oxide/Si nitride film was studied to fill a interlayr insulator film to the high aspect ratio gap. For the purpose, TES (triethylsilane : Si (C_2H_5) H) which did not oxygen was adopted. Then, the organic Si film with 1nm thickness was deposited confrmably in the deep gap by the reaction of hydrogen (H) atoms to TES.The great improvement of the Si film quality was found out by irradiation of H atoms, thereby removing H bonds in this Si film. Thus, a multi-layr, stacked oxide/nitride film with 2.5 nm periodicity was obtained successfully by a … More lternate irradiation of oxygen atoms and ammonia radicals. This film showed high voltage-resistance. Secondly, the digital CVD of the low dielectric constant (low-k) film was studied to improve the high-speed of the ULSI devices. The origin of the low-k was considered to arise from materials produced by small number of valence electrons, thus deposition of films with chemical bonds such as B-C-H,B-N,C-H and C-F was investigated. Specific dielectric constant, epsilon of the SiOF film was 3.89 of high value because of liberation of F atoms during oxidation of the fluorinated Si film. However, the boron nitride film, the hydrocarbon film fabricated from triethylchlorine and cumene, respectively demonstrated epsilon =3 and 2.57. Furthermore epsilon of the fluorocarbon film was low value of 1.89. Finally, since the present digital CVD method required long fabrication time, the Si oxide CVD employing the ICP (Inductively Coupled Plasma) with SiCl_2H_2/O_2 was studied to solve the drawback of the digital CVD.In this study, it was found that reaction of the precursor with oxygen radicals deposited the Si oxide in the absence of the plasma. Hence, another ICP antenna was arranged in vicinity of the sample stage and the time-modulated Ar plasma was generated. Accordingly, the pulse, namely digital irradiation of Ar^+ ions realized filling of the oxide to the high aspect ratio gap. Less

本研究的目标是建立 ULSI 薄膜的数字 CVD 技术，该技术需要填充越来越高的深宽比间隙/孔和高性能，其基本过程是通过原子级重复第一吸附的基本过程来进行的。首先，研究了多层硅氧化物/氮化硅薄膜以填充层间绝缘体薄膜以达到高纵横比间隙。这为此，采用了不含氧的TES（三乙基硅烷：Si(C_2H_5)H），然后通过氢（H）原子与TES的反应，在深间隙中牢固地沉积了1nm厚的有机Si薄膜。通过照射H原子，从而除去该Si膜中的H键，从而得到2.5nm的多层堆叠的氧化物/氮化物膜，从而发现Si膜质量的好坏。通过氧原子和氨自由基的交替照射，成功地获得了周期性。该薄膜表现出高耐压性。其次，研究了低介电常数（低k）薄膜的数字CVD，以提高薄膜的高速化。 ULSI器件的起源被认为是由少量价电子产生的材料产生的，因此沉积了具有B-C-H、B-N、C-H等化学键的薄膜。研究了由于氟化硅膜氧化过程中F原子的释放，SiOF膜的比介电常数ε为3.89，而氮化硼膜、由三乙氯和异丙苯制备的碳氢化合物膜则分别表现出较高的值。 ε=3和2.57，并且氟碳薄膜的ε最终为1.89的低值。 CVD方法需要较长的制造时间，为了解决数字CVD的缺点，研究了采用ICP（感应耦合等离子体）SiCl_2H_2/O_2的氧化硅CVD。在这项研究中，发现前驱体与沉积的氧自由基发生反应因此，另一个 ICP 天线被布置在样品台附近，并且时间调制的 Ar 等离子体相应地产生了脉冲，即数字脉冲。 Ar^+离子的照射实现了氧化物向高深宽比间隙的填充。

项目成果

Y. Kobayashi, Y. Chinzei, H. Asanome, J. Kikuchi, S. Shingubara and Y. Horiike: "High Rate Bias Sputtering Filling of SiO_2 Film Employing Both Continuous Wave and Time-Modulated Inductive Coupled Plasmas" Extended Abstr. of the 1995 Intern. Conf. on Sol.

Y. Kobayashi、Y. Chinzei、H. Asanome、J. Kikuchi、S. Shingubara 和 Y. Horiike：“采用连续波和时间调制感应耦合等离子体的 SiO_2 薄膜的高速率偏置溅射填充”扩展摘要。

Y.Horiike: "High Rate Bias Sputtering Filling of SiO_2 Film Employing Both Continuous Wave and Time-Modulated Inductively Coupled Plasmas" Jpn.J.Appl.Phys.35. 1474-1477 (1996)

Y.Horiike：“采用连续波和时间调制感应耦合等离子体对 SiO_2 薄膜进行高速率偏置溅射填充”Jpn.J.Appl.Phys.35。

H.Sakaue: ""Low Energy Bias Sputtering of SiO_2 into High Aspect Ratio Trench Employing Axially Confined Helicon Wave Plasma"" Extended Abstr.of the 1994 Intern.Conf.on Sol.St.Devs.and Mats.Yokohama. 643-645 (1994)

H.Sakaue：“采用轴向约束螺旋波等离子体将 SiO_2 低能量偏置溅射到高深宽比沟槽中”，1994 年 Intern.Conf.on Sol.St.Devs.and Mats.Yokohama 的扩展摘要。

Y.Horiike: ""High Rate Bias Sputtering Filling of SiO_2 Film Employing Both Continuous Wave and Time-Modulated Inductively Coupled Plasmas"" Jpn.J.Appl.Phys.35. 1474-1477 (1996)

Y.Horiike：“采用连续波和时间调制感应耦合等离子体对 SiO_2 薄膜进行高速率偏置溅射填充”Jpn.J.Appl.Phys.35。

G.Sadakuni,et al.: "Low Energy Bias Sputtcring of SiO_2 into Hihg Aspect Ratio Ternch Employing Axially Confined Hilicon Wave Plasma" Extended Abstr.of the 1994 Intern.Conf.on Sol.St.Devs.and Mats.643-645 (1994)

G.Sadakuni 等人：“Low Energy Bias Sputtcring of SiO_2 into Hihg Aspect Ratio Ternch Employing Axially Conconfed Hilicon Wave Plasma”Extend Abstr.of the 1994 Intern.Conf.on Sol.St.Devs.and Mats.643-645