Trail Manufacturing of Microscopic Infrared Polariscope

显微红外偏光镜的试制

• 批准号: 05555004
• 负责人: YAMADA Masasoshi
• 金额: $ 4.67万
• 依托单位: Kyoto Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05555004/
• 关键词: Photoelasticity; Infrared Polariscope; Residual Strain; Compond Semiconductor; Microscopic Measurement

In order to characterize two-dimensional profiles of residual strains in III-V compound semiconductors by means of photoelactic method, we have developed two kind of microscopic infrared polariscope. One is the scanning type polariscope with high sensitivity and good precision, in which the measurement is made point by point. The other is the multi-channel type polariscope with short measuring time, in which many points are measured simultaneously with an array detecter.Scanning type polariscope After several trial manufacturing of the rotating polarizer which is the most important part of the scanning type polariscope, we have succeeded in manufacturing the scanning type polariscope with practicality on measuring time and precision. The spatial resolution is attained to several ten mum by using a infrared semiconductor laser. Varieties of III-V compound semiconductor wafers (LEC-GaAs, LEC-InP,VCZ-GaAs, VCZ-InP,HB-GaAs) were examed so that the scanning type polariscope was found to be very useful in checking the crystal growth conditions.Multi-channel type polariscope A multi-channel type polariscope for visible light has been successfully developed with a data-processing system which is capable of processing a large amount of image data coming from the array detector. The polariscope developed showed fine performances on spatial resolution and mesearing time. A new technique was introduced for increasing the dynamic range of measurement.

为了利用光电方法表征III-V族化合物半导体中残余应变的二维分布，我们开发了两种显微红外偏光镜。一是扫描式偏光器，灵敏度高，精度好，逐点测量。另一种是测量时间短的多通道型偏光器，用阵列探测器同时测量多个点。扫描型偏光器经过多次试制，成为扫描型偏光器最重要的部件——旋转偏光器。成功制造出具有测量时间和精度实用性的扫描式偏光镜。采用红外半导体激光器，空间分辨率可达数十μm。通过对各种III-V族化合物半导体晶片（LEC-GaAs、LEC-InP、VCZ-GaAs、VCZ-InP、HB-GaAs）进行检查，发现扫描型偏光镜对于检查晶体生长条件非常有用。多通道型偏光镜 已成功开发出可见光多通道型偏光镜，其数据处理系统能够处理来自阵列探测器的大量图像数据。开发的偏光镜在空间分辨率和弥散时间方面表现出良好的性能。引入了一种新技术来增加测量的动态范围。

项目成果

M.Yamada: "High-sensitivity computer-controlled infrared polariscope" Rev.Sci.Instrm.64. 1815-1821 (1993)

M.Yamada：“高灵敏度计算机控制红外偏光镜”Rev.Sci.Instrm.64。

M.Yamada: "Anomalous Increase of Residual Strains Accompanied with Slip Generation by Thermal Annealing of LEC GaAs Wafers" Proc.of 20th Int.Symp.on GaAs and Related Compounds,Freiburg. (in press). (1993)

M.Yamada：“LEC GaAs 晶圆热退火导致残余应变异常增加并伴随滑移产生”Proc.of 第 20 届 Int.Symp.on GaAs 及相关化合物，弗莱堡。

M. Yamada: "Anormalous increase of residual starins accompanied with slip generation by thermal annealing of LEC-grown GaAs wafers" PRoc. of 20th Int. Symp. on GaAs and Relataed Compounds,Freiburg Germany,IOP No. 136. 505-510 (1993)

M. Yamada：“LEC 生长的 GaAs 晶圆热退火导致残留 Starins 异常增加并伴随滑移产生”PROc。

M.Yamada, T.Shibuya, and M.Fukuzawa: "Anormalous increase of residual strains accompanied with slip generation by thermal annealing of LEC-grown GaAs wafers" Proc.of 20th Int.Symp.on GaAs and Relatead Compounds, Freiburg Germany, IOP. No.136. 505-510 (199

M.Yamada、T.Shibuya 和 M.Fukuzawa：“LEC 生长的 GaAs 晶圆热退火导致残余应变异常增加并伴随滑移产生”Proc.of 20th Int.Symp.on GaAs and Relateadcompounds，德国弗莱堡，

M.Yamada: "Quantitative photoelastic characterization of residual strains in LEC-grown indium phosphide(100)wafers" Proc.of 5th Int.Conf.on Indium Phosphide and Related Materials. IEEE Cat.# 93CH3276-3. 69-72 (1993)

M.Yamada：“LEC 生长的磷化铟 (100) 晶圆中残余应变的定量光弹性表征”第五届磷化铟及相关材料国际会议论文集。