Trail Manufacturing of Microscopic Infrared Polariscope

显微红外偏光镜的试制

• 批准号: 05555004
• 负责人: YAMADA Masasoshi
• 金额: $ 4.67万
• 依托单位: Kyoto Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05555004/
• 关键词: Photoelasticity; Infrared Polariscope; Residual Strain; Compond Semiconductor; Microscopic Measurement

In order to characterize two-dimensional profiles of residual strains in III-V compound semiconductors by means of photoelactic method, we have developed two kind of microscopic infrared polariscope. One is the scanning type polariscope with high sensitivity and good precision, in which the measurement is made point by point. The other is the multi-channel type polariscope with short measuring time, in which many points are measured simultaneously with an array detecter.Scanning type polariscope After several trial manufacturing of the rotating polarizer which is the most important part of the scanning type polariscope, we have succeeded in manufacturing the scanning type polariscope with practicality on measuring time and precision. The spatial resolution is attained to several ten mum by using a infrared semiconductor laser. Varieties of III-V compound semiconductor wafers (LEC-GaAs, LEC-InP,VCZ-GaAs, VCZ-InP,HB-GaAs) were examed so that the scanning type polariscope was found to be very useful in checking the crystal growth conditions.Multi-channel type polariscope A multi-channel type polariscope for visible light has been successfully developed with a data-processing system which is capable of processing a large amount of image data coming from the array detector. The polariscope developed showed fine performances on spatial resolution and mesearing time. A new technique was introduced for increasing the dynamic range of measurement.

为了表征III-V复合半导体中残留菌株的二维曲线，我们开发了两种显微镜红外偏光镜。一种是具有高灵敏度和良好精度的扫描类型的polariscope，其中测量逐点进行。另一个是多通道类型的极化时间，其测量时间很短，其中许多点与阵列检测器同时测量。在旋转偏振器进行了几次试验制造之后，这是扫描类型polarsispope的最重要部分，我们在扫描类型的polarsistope上成功制造了扫描类型的极极性，并在实用性上进行了尺寸和精确的时间和精确的时间。通过使用红外半导体激光器，实现了几个十个妈妈的空间分辨率。检查了IIII-V化合物半导体晶片（LEC-GAAS，LEC-INP，VCZ-GAA，VCZ-GAAS，VCZ-INP，HB-GAAS）的各种，因此发现扫描类型的偏光镜在检查晶体型的polariSpoper-polli-polarispess中，可用于检查多个系统的polli-polariss seption的扫描类型的极性层次的偏光层非常有用。处理来自数组检测器的大量图像数据。北极杆开发的在空间分辨率和网状时间上表现出良好的表现。引入了一种新技术，以增加测量的动态范围。

项目成果

M.Yamada: "Anomalous Increase of Residual Strains Accompanied with Slip Generation by Thermal Annealing of LEC GaAs Wafers" Proc.of 20th Int.Symp.on GaAs and Related Compounds,Freiburg. (in press). (1993)

M.Yamada：“LEC GaAs 晶圆热退火导致残余应变异常增加并伴随滑移产生”Proc.of 第 20 届 Int.Symp.on GaAs 及相关化合物，弗莱堡。

M.Yamada: "High-sensitivity computer-controlled infrared polariscope" Rev.Sci.Instrm.64. 1815-1821 (1993)

M.Yamada：“高灵敏度计算机控制红外偏光镜”Rev.Sci.Instrm.64。

M. Yamada: "Anormalous increase of residual starins accompanied with slip generation by thermal annealing of LEC-grown GaAs wafers" PRoc. of 20th Int. Symp. on GaAs and Relataed Compounds,Freiburg Germany,IOP No. 136. 505-510 (1993)

M. Yamada：“LEC 生长的 GaAs 晶圆热退火导致残留 Starins 异常增加并伴随滑移产生”PROc。

M.Yamada, T.Shibuya, and M.Fukuzawa: "Anormalous increase of residual strains accompanied with slip generation by thermal annealing of LEC-grown GaAs wafers" Proc.of 20th Int.Symp.on GaAs and Relatead Compounds, Freiburg Germany, IOP. No.136. 505-510 (199

M.Yamada、T.Shibuya 和 M.Fukuzawa：“LEC 生长的 GaAs 晶圆热退火导致残余应变异常增加并伴随滑移产生”Proc.of 20th Int.Symp.on GaAs and Relateadcompounds，德国弗莱堡，

M.Yamada: "Quantitative photoelastic characterization of residual strains in LEC-grown indium phosphide(100)wafers" Proc.of 5th Int.Conf.on Indium Phosphide and Related Materials. IEEE Cat.# 93CH3276-3. 69-72 (1993)

M.Yamada：“LEC 生长的磷化铟 (100) 晶圆中残余应变的定量光弹性表征”第五届磷化铟及相关材料国际会议论文集。