Development of large-diameter RF plasmas under surface magnetic field

表面磁场下大直径射频等离子体的研制

基本信息

批准号：
04558002
负责人：
SUGAI Hideo
金额：
$ 6.02万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1992
资助国家：
日本
起止时间：
1992 至 1994
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-04558002/
关键词：
plasma process high density plasma inductively coupled plasma helicon plasma plasma etching surface magnetic field Faraday shield indium-tin-oxide film ヘリコン波プラズマ選択ドライエッチング ITO薄膜ファラデシールドラジカルアンテナ電磁界永久磁石誘導型RF 高周波プラズマ大

项目摘要

The research and development on plasma production, diagnostics and control have been extentsively performed in order to produce a high-density, large-diameter and low-pressure plasma for materials processing. The results obtained in this study are summarized below :1.High-Density Plasma ProductionA large-diameter high-density plasma at low pressures was generated by inserting an inductive RF antenna into a vacuum vessel which is covered with surface magnetic fields. Electrostatic coupling of the antenna from plasma was shown to be suppressed by a Faraday shield. On the other hand, mechanisms of RF power absorption in a helicon plasm were investigated. Under the conditions of low magnetic fields (<100 G) and low power (<1 kW) , the RF power turned out to be deposited into a plasma via antenna nearfields rather than helicon wave fields.2.Diagnosticcs, Control and Applications of High-Density PlasmasThe detaild dignostics showed that a high electron density considerably modifies the radical composition, thus degrading an etch selectivity. Two methods to solve this problem were developed : one is a vessel wall heating (100-200ﾟC) and the other is a pulsed discharge (duration -10mus) .In addition, we developed new techniques for measuring electron density by a plasma oscillation method, electron energy distribution functi on by a biased optical probe method, and SiH_3 radical and particulates by ultravioret absorption spectroscopy.

为了产生用于材料加工的高密度、大直径和低压等离子体，对等离子体产生、诊断和控制的研究和开发已被广泛进行。本研究获得的结果总结如下：1.高-密度等离子体的产生通过将感应射频天线插入到覆盖有表面磁场的真空容器中，可以产生低压下的大直径高密度等离子体。另一方面，研究了在低磁场（<100 G）和低功率（<1 kW）条件下射频功率吸收的机制。通过天线近场而不是螺旋波场沉积到等离子体中。2.高密度等离子体的诊断、控制和应用详细的诊断表明，高电子密度大大改变了自由基我们开发了两种方法来解决这个问题：一种是容器壁加热（100-200°C），另一种是脉冲放电（持续时间-10mus）。此外，我们还开发了新技术。用于通过等离子体振荡法测量电子密度，通过偏置光学探针法测量电子能量分布函数，以及通过紫外吸收光谱法测量SiH_3自由基和颗粒。