Development of large-diameter RF plasmas under surface magnetic field
表面磁场下大直径射频等离子体的研制
基本信息
- 批准号:04558002
- 负责人:
- 金额:$ 6.02万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Developmental Scientific Research (B)
- 财政年份:1992
- 资助国家:日本
- 起止时间:1992 至 1994
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The research and development on plasma production, diagnostics and control have been extentsively performed in order to produce a high-density, large-diameter and low-pressure plasma for materials processing. The results obtained in this study are summarized below :1.High-Density Plasma ProductionA large-diameter high-density plasma at low pressures was generated by inserting an inductive RF antenna into a vacuum vessel which is covered with surface magnetic fields. Electrostatic coupling of the antenna from plasma was shown to be suppressed by a Faraday shield. On the other hand, mechanisms of RF power absorption in a helicon plasm were investigated. Under the conditions of low magnetic fields (<100 G) and low power (<1 kW) , the RF power turned out to be deposited into a plasma via antenna nearfields rather than helicon wave fields.2.Diagnosticcs, Control and Applications of High-Density PlasmasThe detaild dignostics showed that a high electron density considerably modifies the radical composition, thus degrading an etch selectivity. Two methods to solve this problem were developed : one is a vessel wall heating (100-200゚C) and the other is a pulsed discharge (duration -10mus) .In addition, we developed new techniques for measuring electron density by a plasma oscillation method, electron energy distribution functi on by a biased optical probe method, and SiH_3 radical and particulates by ultravioret absorption spectroscopy.
为了生产高密度,大直径和低压等离子体的材料处理,对等离子体产生,诊断和控制的研究与发展进行了广泛的执行。本研究中获得的结果总结了下面:1。通过将电感性RF天线插入带有表面磁场覆盖的真空容器中,从而产生了低压的大直径高密度等离子体。从血浆中的天线的静电耦合显示出被法拉第盾牌抑制。另一方面,研究了Helicon血浆中RF功率抽象的机制。在低磁场(<100 g)和低功率(<1 kW)的条件下,RF功率被证明是通过近场的天线而不是Helicon Wave场沉积到血浆中的。2.Dignostics,控制和应用高密度等离子体的细节dignostics表明,高电子密度对自由度的密度认为是自由度的选择,从而选择了一个选择,从而选择了一个选择的人。开发了两种解决此问题的方法:一种是容器壁加热(100-200 c),另一种是脉冲放电(持续时间-10mus)。此外,我们开发了新技术,通过等离子振荡方法测量电子密度,通过偏置的光学探针方法在电子能量分布上通过偏置的光学探针方法和SIHIH_3 RADILAVERS和SIH_3 rAD和STRAVERSTRAVES效应。
项目成果
期刊论文数量(34)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
H.Sugai,M.Yamage,Y.Hikosaka,T.Nakano,H.Toyoda: "Plasma Assisted Surface Modification and Radical Diagnostics" Journal of Nuclear Materials. (1993)
H.Sugai,M.Yamage,Y.Hikosaka,T.Nakano,H.Toyoda:“等离子体辅助表面改性和自由基诊断”核材料杂志。
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- 影响因子:0
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- 通讯作者:
Y. Hikosaka, M. Nakamura, H. Sugai: "Free Radicals in an Inductively Coupled Etching Plasma" Japanese Journal of Applied Physics. 33. 2157-2163 (1994)
Y. Hikosaka、M. Nakamura、H. Sugai:“感应耦合蚀刻等离子体中的自由基”日本应用物理学杂志。
- DOI:
- 发表时间:
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- 影响因子:0
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- 通讯作者:
Y.Hikosaka, M.Nakamura and H.Sugai :"Free Radicals in an Inductively Coupled Etching Plasma" Jpn.J.Appl.Phys.33. 2157-2163 (1994)
Y.Hikosaka、M.Nakamura 和 H.Sugai:“感应耦合蚀刻等离子体中的自由基”Jpn.J.Appl.Phys.33。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Y.Hikosaka,M.Nakamura,H.Sugai: "Free Radicals in an Inductively Coupled Etching Plasma" Japanese Journal of Applied Physics. 33. 2157-2163 (1994)
Y.Hikosaka、M.Nakamura、H.Sugai:“感应耦合蚀刻等离子体中的自由基”日本应用物理学杂志。
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- 发表时间:
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- 影响因子:0
- 作者:
- 通讯作者:
K.Nakamura,T.Imura,H.Sugai.M.Ohkubo,K.Ichihara: "High-Speed Etching of Indium-Tin-Oxide Thin Films using an Inductively Coupled Plasma" Japanese Journal Applied Physics. 33. 4438-4441 (1994)
K.Nakamura,T.Imura,H.Sugai.M.Ohkubo,K.Ichihara:“使用感应耦合等离子体高速蚀刻氧化铟锡薄膜”日本应用物理杂志。
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- 影响因子:0
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SUGAI Hideo其他文献
SUGAI Hideo的其他文献
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{{ truncateString('SUGAI Hideo', 18)}}的其他基金
Development of Giant Plasma Processing Based on Large-Area Microwave Discharge
基于大面积微波放电的巨型等离子体处理研究进展
- 批准号:
15204053 - 财政年份:2003
- 资助金额:
$ 6.02万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Development of Large-area High-quality LCD Processing by Surface Wave Plasma
表面波等离子体大面积高品质LCD加工的开发
- 批准号:
12358004 - 财政年份:2000
- 资助金额:
$ 6.02万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Study on Surface Reaction Processes Using High Performance Beam Device
利用高性能束流装置进行表面反应过程的研究
- 批准号:
10308016 - 财政年份:1998
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$ 6.02万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Development of Selective Hydrogen Pumping Method Using Lithium Films
锂膜选择性抽氢方法的发展
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07558177 - 财政年份:1995
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$ 6.02万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Novel First-Wall Conditioning in Stationary Reactor Studies
固定反应堆研究中的新型第一壁调节
- 批准号:
06452419 - 财政年份:1994
- 资助金额:
$ 6.02万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Optimization of Particle Control by Boronization
通过渗硼优化颗粒控制
- 批准号:
04452310 - 财政年份:1992
- 资助金额:
$ 6.02万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Development of Low-Energy Particle-Beam Sources for Super-fine Plasma Processing
用于超精细等离子体加工的低能粒子束源的开发
- 批准号:
01880002 - 财政年份:1989
- 资助金额:
$ 6.02万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B).
Formation of Functional Thin Films by a Double Plasma Device
双等离子体装置形成功能薄膜
- 批准号:
62880003 - 财政年份:1987
- 资助金额:
$ 6.02万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research
Mode Conversion Phenomena of Electromagnetic Waves in a Magnetized Plasma
磁化等离子体中电磁波的模式转换现象
- 批准号:
61460227 - 财政年份:1986
- 资助金额:
$ 6.02万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
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