OPTICAL STUDY OF NEW THERMAL DONORS IN SILICON

硅中新热供体的光学研究

基本信息

批准号：
03650017
负责人：
KAMIURA Yoichi
金额：
$ 1.28万
依托单位：
OKAYAMA UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1993
项目状态：
已结题

项目摘要

1. We have measured infrared absorption at 4K of phosphorus-doped CZ Si crystals annealed at 470ﾟC for long durations. We have observed many sharp absorption peaks arising from the electronic transitions from the ground states to excited states of the shallow levels of several species of thermal donor (TD). The present work has been made to investigate the relationship between the annihilation behavior of these TD peaks and the generation behavior of new thermal donor (NTD) during the prolonged annealing and the effects of carbon on this relationship and also to discuss the mechanism of the generaton and annihilation of TD and NTD and the mechanism of their electrical activation.2. The results obtained are as follows. The same infrared absorption peaks were observed regardless of the carbon density. This means that the same TD species were formed independently of the carbon density. However, the formation of TD was suppressed by the presence of carbon. More remarkably, the annihilation of TD occurred anomalously rapidly in carbon-rich crystals, accompanying the annihilation of substitutional carbon. An important feature is the close correlation of these annihilation with the formation of NTD.3. We propose the following hypothesis. Si self-interstitials created during the oxygen aggregation process eject substitutional carbon into an interstitial site and this interstitial carbon rapidly diffuses to TD to decorate them so as to form electrically inactive clusters, which act as the embryos of NTD.In other words, oxygen atoms diffuse to these neutral embryos to grow the clusters and cause the generation of electrically active donors, NTD.

1. 我们测量了在 470°C 长时间退火的磷掺杂 CZ Si 晶体在 4K 时的红外吸收，我们观察到许多尖峰是由几个浅吸收能级的电子从基态跃迁到激发态而产生的。目前的工作是研究这些 TD 峰的湮灭行为与新热供体 (NTD) 的生成行为之间的关系。退火和碳对此关系的影响，并讨论了TD和NTD的产生和湮灭的机制以及它们的电激活机制。2．得到的结果如下。这意味着相同的 TD 物种的形成与碳密度无关。然而，TD 的形成受到碳的存在的抑制，TD 的湮灭异常迅速。富含碳的晶体，伴随着取代碳的湮灭，一个重要的特征是这些湮灭与NTD的形成密切相关。3我们提出了以下假设：在氧聚集过程中产生的硅自填隙将取代碳喷射到其中。间隙位点，间隙碳迅速扩散到 TD 来装饰它们，从而形成电不活跃的团簇，这些团簇充当 NTD 的胚胎。换句话说，氧原子扩散这些中性胚胎生长簇并导致电活性供体 NTD 的产生。