High Temperature Fatigue Crack Growth in Silicon Nitride and Role of SCC.

氮化硅中的高温疲劳裂纹扩展和 SCC 的作用。

基本信息

  • 批准号:
    02650054
  • 负责人:
  • 金额:
    $ 1.22万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
  • 财政年份:
    1990
  • 资助国家:
    日本
  • 起止时间:
    1990 至 1991
  • 项目状态:
    已结题

项目摘要

(1) During crack growth in silicon nitride, microcracking on weak grain boundaries and subsequently bridging occur. The acceleration of crack growth rate in cyclic fatigue compared to the case in static fatigue will result from that the bridges are fractured and removed by cyclic deformation.(2) The crack growth behavior in silicon nitride is strongly affected by the history of crack growth due to formation of the bridges. So, the crack growth rate can not be given uniquely by the applied K-value.(3) The crack tip stress intensity factor K-tip, which is given the actual stress field at the crack tip country on the effect of stress shield by the bridging, can be estimated by reducing the K at crack tip from the measured crack mouth opening displacement. The unique relationship between K-tip and crack growth rate is found independent of the history of crack growth.(4) The orientation of silicon nitride grain in the tensile direction in the high strain region at the crack tip was observed at the temperatures over 1200゚C, which corresponds to the softening point of the grain boundary glass phase. The transition of fracture mechanism was observed from brittle intergranular to ductile pulling out of grain with shear deformation of boundary glass phase.
(1)在氮化硅裂纹生长过程中,微裂纹在弱晶界和随后的桥梁上进行。与静态疲劳的情况相比,环状疲劳的裂纹生长速率的加速性将导致桥梁被骨折并通过循环变形来清除。(2)氮化硅的裂纹生长行为受到桥形成裂纹生长的历史的强烈影响。因此,裂纹的生长速率不能由施加的k值唯一给出。(3)裂纹尖端应力强度因子k-tip(在裂纹尖端国家通过桥梁的效果)给出了裂纹尖端的实际应力场,可以通过从裂纹尖端从测量的裂纹裂纹口张开的裂纹尖端减少k来估计。发现K-TIP和裂纹生长速率之间的独特关系与裂纹生长的历史无关。(4)在高应变区域在裂纹尖端的高应变区域在1200 c的温度下观察到氮气在高应变区域中的方向的方向,这对应于晶粒边界玻璃相的软化点。从脆性间间到延性的裂缝机制的过渡,并从晶粒中脱离边界玻璃相的剪切变形。

项目成果

期刊论文数量(20)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Y. Motoh, M. Takahashi, T. Oikawa, H. Okamoto: "Fatigue Crack Growth of Long and Short Cracks in Silicion Nitride" Fatigue of Advanced Materials. Pergamon Press. (1991)
Y. Motoh、M. Takahashi、T. Oikawa、H. Okamoto:“氮化硅中长裂纹和短裂纹的疲劳裂纹扩展”先进材料的疲劳。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Y.Mutoh,et al.: "Fatigue Crack Growth of Long and Short Cracks in Silicon Nitride" Fatigue of Advanced Materials. (1991)
Y.Mutoh 等人:“氮化硅中长裂纹和短裂纹的疲劳裂纹生长”先进材料的疲劳。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Y.Mutoh,et al.: "BrittleーtoーDuctile Transition in Silion Nitride" Fracture Mechanics of Ceramics. 10. (1992)
Y. Mutoh 等人:“氮化硅中的脆性到延性转变”陶瓷断裂力学 10。(1992)
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
M. Takahashi, Y. Mutoh, K. Yanagi, H. Okamoto, T. Oikawa: "Effect of surface Finish on Fatigue Strength in Silicon Nitride" Mechanical Behavior of Materials- VI.2. 371-376 (1991)
M. Takahashi、Y. Mutoh、K. Yanagi、H. Okamoto、T. Oikawa:“表面光洁度对氮化硅疲劳强度的影响”材料的机械行为 - VI.2。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
高橋,武藤: "数種のセラミックスの静疲労および繰返し疲労き裂伝ぱ特性" 日本機械学会論文集. 57. 2615-2621 (1991)
Takahashi, Muto:“几种陶瓷的静态疲劳和循环疲劳裂纹扩展特性”,日本机械工程师学会汇刊 57. 2615-2621 (1991)。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
共 18 条
  • 1
  • 2
  • 3
  • 4
前往

MUTOH Yoshiharu其他文献

Effects of Adhesives on Evaluation Method of Interfacial Strength of Plasma‐Sprayed HAp Coating
粘合剂对等离子喷涂HAp涂层界面强度评价方法的影响
  • DOI:
  • 发表时间:
    2017
    2017
  • 期刊:
  • 影响因子:
    0
  • 作者:
    OTSUKA Yuichi,HIRAKU Yoshihisa;HAKOZAKI Yuki, MIYASHITA Yukio;MUTOH Yoshiharu
    OTSUKA Yuichi,HIRAKU Yoshihisa;HAKOZAKI Yuki, MIYASHITA Yukio;MUTOH Yoshiharu
  • 通讯作者:
    MUTOH Yoshiharu
    MUTOH Yoshiharu
共 1 条
  • 1
前往

MUTOH Yoshiharu的其他基金

Development of a Method for Fretting Fatigue Life Prediction with Taking Account of Wear based on in-situ Observation of Fretting Wear and Fatigue Processes
基于微动磨损和疲劳过程的现场观察,开发考虑磨损的微动疲劳寿命预测方法
  • 批准号:
    21360052
    21360052
  • 财政年份:
    2009
  • 资助金额:
    $ 1.22万
    $ 1.22万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
    Grant-in-Aid for Scientific Research (B)
Laser Cutting of Functional Materials by Twin Laser Beam and Thermal Stress Analysis
双激光束激光切割功能材料和热应力分析
  • 批准号:
    16360050
    16360050
  • 财政年份:
    2004
  • 资助金额:
    $ 1.22万
    $ 1.22万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
    Grant-in-Aid for Scientific Research (B)
Development of thermo conductive analysis simulation in order to aid laser welding of dissimilar metals
开发热传导分析模拟以辅助异种金属的激光焊接
  • 批准号:
    13650774
    13650774
  • 财政年份:
    2001
  • 资助金额:
    $ 1.22万
    $ 1.22万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
    Grant-in-Aid for Scientific Research (C)
Fatigue crack growth behavior of interface crack in thermal barrier coating
热障涂层界面裂纹的疲劳裂纹扩展行为
  • 批准号:
    10650077
    10650077
  • 财政年份:
    1998
  • 资助金额:
    $ 1.22万
    $ 1.22万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
    Grant-in-Aid for Scientific Research (C)
Development of a System for Analysing Damage Mechanism of Coatings in Scratch Test
涂层划痕试验损伤机理分析系统的开发
  • 批准号:
    07555619
    07555619
  • 财政年份:
    1995
  • 资助金额:
    $ 1.22万
    $ 1.22万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
    Grant-in-Aid for Scientific Research (B)
Fatigue Strength of Functionally Graded Thermal Barrier Ceramic Coatings Subjected to Thermal Cycling under Gradient Temperature
梯度温度下热循环功能梯度热障陶瓷涂层的疲劳强度
  • 批准号:
    06452147
    06452147
  • 财政年份:
    1994
  • 资助金额:
    $ 1.22万
    $ 1.22万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
    Grant-in-Aid for Scientific Research (B)
High Temperature Fretting Fatigue Properties of Silicon Nitride
氮化硅的高温微动疲劳性能
  • 批准号:
    04650062
    04650062
  • 财政年份:
    1992
  • 资助金额:
    $ 1.22万
    $ 1.22万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
    Grant-in-Aid for General Scientific Research (C)
High Temperature Fretting Fatigue of Turbine Steels Under Variable Loading Simulating Practical Operation
模拟实际运行变载荷下汽轮机钢的高温微动疲劳
  • 批准号:
    62550053
    62550053
  • 财政年份:
    1987
  • 资助金额:
    $ 1.22万
    $ 1.22万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
    Grant-in-Aid for General Scientific Research (C)
Fracture toughness of ceramics at elevated temperature and metallurgical factors for controlling the toughness
陶瓷高温断裂韧性及控制韧性的冶金因素
  • 批准号:
    60550048
    60550048
  • 财政年份:
    1985
  • 资助金额:
    $ 1.22万
    $ 1.22万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
    Grant-in-Aid for General Scientific Research (C)

相似国自然基金

数字/模拟共存型氮化硅阻变开关及机理研究
  • 批准号:
    62374127
  • 批准年份:
    2023
  • 资助金额:
    48 万元
  • 项目类别:
    面上项目
孔隙率梯度氮化硅基耐高温宽频透波材料的制备与应用相关基础问题
  • 批准号:
    52332002
  • 批准年份:
    2023
  • 资助金额:
    230 万元
  • 项目类别:
    重点项目
氮化硅基透波材料的多孔结构构筑及高温力学/介电性能协同优化
  • 批准号:
    12374030
  • 批准年份:
    2023
  • 资助金额:
    53 万元
  • 项目类别:
    面上项目
面向功率器件用高强韧高导热氮化硅陶瓷的显微结构精细调控
  • 批准号:
    52302067
  • 批准年份:
    2023
  • 资助金额:
    30.00 万元
  • 项目类别:
    青年科学基金项目
氮化硅陶瓷/金属界面梯度过渡层设计与热疲劳机理研究
  • 批准号:
  • 批准年份:
    2022
  • 资助金额:
    30 万元
  • 项目类别:
    青年科学基金项目

相似海外基金

Monolithic generation & detection of squeezed light in silicon nitride photonics (Mono-Squeeze)
单片一代
  • 批准号:
    EP/X016218/1
    EP/X016218/1
  • 财政年份:
    2024
  • 资助金额:
    $ 1.22万
    $ 1.22万
  • 项目类别:
    Research Grant
    Research Grant
Monolithic generation & detection of squeezed light in silicon nitride photonics (Mono-Squeeze)
单片一代
  • 批准号:
    EP/X016749/1
    EP/X016749/1
  • 财政年份:
    2024
  • 资助金额:
    $ 1.22万
    $ 1.22万
  • 项目类别:
    Research Grant
    Research Grant
Study of silicon nitride thin films as optical mirror coatings for cryogenic based gravitational wave detectors
氮化硅薄膜作为低温引力波探测器光学镜涂层的研究
  • 批准号:
    ST/X00533X/1
    ST/X00533X/1
  • 财政年份:
    2023
  • 资助金额:
    $ 1.22万
    $ 1.22万
  • 项目类别:
    Training Grant
    Training Grant
Improved Detection of Gravitational Waves using Silicon Nitride Thin Films Under Cryogenic Conditions.
在低温条件下使用氮化硅薄膜改进引力波检测。
  • 批准号:
    2903348
    2903348
  • 财政年份:
    2023
  • 资助金额:
    $ 1.22万
    $ 1.22万
  • 项目类别:
    Studentship
    Studentship
Silicon Nitride for Quantum Computing (SiNQ)
用于量子计算的氮化硅 (SiNQ)
  • 批准号:
    10074567
    10074567
  • 财政年份:
    2023
  • 资助金额:
    $ 1.22万
    $ 1.22万
  • 项目类别:
    Feasibility Studies
    Feasibility Studies