Studies on chemical Vapor Deposition of High-temperature Superconductor for Wire Application

线材用高温超导体化学气相沉积研究

• 批准号: 02555146
• 负责人: HIRAI Toshio
• 金额: $ 7.81万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1990
• 资助国家: 日本
• 起止时间: 1990 至 1991
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02555146/
• 关键词: Oxide High-T_c Oxide; Chemical Vapor Deposition; Polycrystalline Ceramic Substrate; Superconducting Transition; Critical Current Densigy; Crystallographic Orientation; Low Temperature Growth; Magnetic Field Dependence; 磁場依存性; 線材化; 多結晶基板

Chemical vapor deposition (CVD) of Y-Ba-Cu-O superconductiong oxide were investigated for production of superconducting wires. The substrates used were polycrystallne Y_2O_3-stabilized ZrO_2 (YSZ), MgO, Al_2O_3, and Hastelloy from which long fibers and tapes can be shaped. The c-axis of YBa_2Cu_3Oy was mainly oriented perpendicular to the subtrate plane. The films deposited on YSZ, MgO and YSZ-coated Hastelloy metal showed zero resistivity at 90 K, 87 K and 87 K, respectively. The superconducting transition temperature of the films deposited on Al_2O_3 and Hastelloy without the YSZ coating layer was below 77 K. The critical current density (J_c) of the films deposited on YSZ was 8.0X10^3 A/cm^2 and that of the film on YSZ-coated Hastelloy was 6.4X10^6 A/cm^2 at 77.3 K and O T. J_c measured at 77.3 K under an applied magnetic field of 15 T parallel to the substrate plane was 6.4X10^3 A/cm^2 for the film on YSZ and 4.7X10^2 A/cm^2 for the film on YSZ-coated Hastelloy.High-J_c Y-Ba-Cu-O superconducting films were successfully prepared at 700ﾟC by CVD under low oxygen partial pressure during film depostition. Such high-J_c films could previously be obtained only at 850ﾟC by CVD.

研究了Y-Ba-Cu-O超导氧化物的化学气相沉积（CVD）技术用于生产超导线材，所用基材是多晶Y_2O_3稳定的ZrO_2（YSZ）、MgO、Al_2O_3和哈氏合金，可以用其制备长纤维和带材。 YBa_2Cu_3Oy 的 c 轴主要垂直于方向。在YSZ、MgO和YSZ涂层的哈氏合金金属上沉积的薄膜分别在90 K、87 K和87 K时表现出零电阻率。在没有YSZ涂层的Al_2O_3和哈氏合金上沉积的薄膜的超导转变温度为。低于77 K。YSZ上沉积的薄膜的临界电流密度（J_c）为8.0X10^3 A/cm^2 和 YSZ 涂层哈氏合金上薄膜的 A/cm^2 在 77.3 K 和 O T 下为 6.4X10^6 A/cm^2。J_c 在 77.3 K 下在平行于基底平面的 15 T 外加磁场下测量YSZ 上的胶片为 6.4X10^3 A/cm^2，YSZ 上的胶片为 4.7X10^2 A/cm^2 YSZ涂层哈氏合金。在薄膜沉积过程中，在低氧分压下，通过CVD在700℃下成功制备了高J_c Y-Ba-Cu-O超导薄膜，这种高J_c薄膜以前只能在850℃下获得。 CVD

项目成果

H. Yamane: "Effect of Oxygen Partial Pressure on the chemical Vapor Deposition of Y-Ba-Cu-O Superconducting films" Hign T_c Superconductor Thin Films, Proc. International Conference on Advanced materials (ICAM 91) edited by L. Correra, Elsevier Science Pu

H. Yamane：“氧分压对 Y-Ba-Cu-O 超导薄膜化学气相沉积的影响”高 T_c 超导薄膜，Proc。

T. Hirai: "MOCVD Superconducting Oxide Films" J. Crystal Growth. 107[1-4]. 683-691 (1991)

T. Hirai：“MOCVD 超导氧化物薄膜”J. 晶体生长。

H. Yamane: "Chemical Vapor Deposition of High-T_c Superconducting Oxide Thin Films" High-T_c Superconductor Thin films, Proc. International Conference on AdvancedMaterials, (ICAM 91) edited by L. Correra, Elsevier Science Publishers, Amsterdam. May 27-31.

H. Yamane：“高温超导氧化物薄膜的化学气相沉积”高温超导薄膜，Proc。

H.Yamane: "Effect of Oxygen Partial Presure on the Chemical Vapor Deposition of Y-Ba-Cu-O Superconducting Films" High Tc Superconductor Thin Films,Proc.International Conference on Advanced Materials (ICAM 91),May 27-31,1991,Strasbourg,edited by L.Correra,

H.Yamane：“氧分压对 Y-Ba-Cu-O 超导薄膜化学气相沉积的影响”高温超导薄膜，Proc.国际先进材料会议 (ICAM 91)，1991 年 5 月 27-31 日

T.Hirai: "MOCVD Superconducting Oxide Films" J.Crystal Growth. 107[1-4]. 683-691 (1991)

T.Hirai：“MOCVD 超导氧化物薄膜”J.Crystal Growth。