Studies on chemical Vapor Deposition of High-temperature Superconductor for Wire Application

线材用高温超导体化学气相沉积研究

基本信息

批准号：
02555146
负责人：
HIRAI Toshio
金额：
$ 7.81万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1990
资助国家：
日本
起止时间：
1990 至 1991
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02555146/
关键词：
Oxide High-T_c Oxide Chemical Vapor Deposition Polycrystalline Ceramic Substrate Superconducting Transition Critical Current Densigy Crystallographic Orientation Low Temperature Growth Magnetic Field Dependence 磁場依存性線材化多結晶基板

项目摘要

Chemical vapor deposition (CVD) of Y-Ba-Cu-O superconductiong oxide were investigated for production of superconducting wires. The substrates used were polycrystallne Y_2O_3-stabilized ZrO_2 (YSZ), MgO, Al_2O_3, and Hastelloy from which long fibers and tapes can be shaped. The c-axis of YBa_2Cu_3Oy was mainly oriented perpendicular to the subtrate plane. The films deposited on YSZ, MgO and YSZ-coated Hastelloy metal showed zero resistivity at 90 K, 87 K and 87 K, respectively. The superconducting transition temperature of the films deposited on Al_2O_3 and Hastelloy without the YSZ coating layer was below 77 K. The critical current density (J_c) of the films deposited on YSZ was 8.0X10^3 A/cm^2 and that of the film on YSZ-coated Hastelloy was 6.4X10^6 A/cm^2 at 77.3 K and O T. J_c measured at 77.3 K under an applied magnetic field of 15 T parallel to the substrate plane was 6.4X10^3 A/cm^2 for the film on YSZ and 4.7X10^2 A/cm^2 for the film on YSZ-coated Hastelloy.High-J_c Y-Ba-Cu-O superconducting films were successfully prepared at 700ﾟC by CVD under low oxygen partial pressure during film depostition. Such high-J_c films could previously be obtained only at 850ﾟC by CVD.

研究了Y-BA-CU-O超导氧化物的化学蒸气沉积（CVD）以生产超导电线。所使用的底物是polycrystallne y_2o_3稳定的zro_2（ysz），mgo，al_2o_3和hastelloy，可以从中形成长纤维和磁带。 YBA_2CU_3OY的C轴主要定向垂直于下层平面。这些膜沉积在YSZ，MGO和涂层YSZ涂层的Hastelloy金属上，分别在90 K，87 K和87 K处显示为零。在没有YSZ涂层层的Al_2O_3和Hastelloy上沉积的薄膜的超导过渡温度低于77K。在YSZ上沉积的膜的临界电流密度（J_C）为8.0x10^3 A/CM^2，在YSZ涂层的Hastelloy上的胶片上的iS/cm ys.4x10^6 a/cm and yss and yss and yss and ys and ys ys and ys and ys and ys and ys ys ys/cm and o ot o ys and ys o ang and o o ot ot ys。 77.3 K在YSZ上的胶片上平行于15 t的磁场为15 T平行的磁场为6.4x10^3 A/cm^2，而在YSZ涂层的hastelloy.high-j_c y-ba-ba-ba-cu-o-o-o-o cu-o-o cu-o-o-o timpoctions在70000 c上的胶卷中的胶片中的胶片均取得了较低的压力。以前，CVD以前只能在850°C下获得此类高J_C膜。