Low Temperature Growth of Semiconductor Sic by Photo-Plasma Double Excitation

光等离子体双激发低温生长半导体SiC

基本信息

批准号：
01550016
负责人：
NISHINO Shigehiro
金额：
$ 1.28万
依托单位：
Kyoto Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1989
资助国家：
日本
起止时间：
1989 至 1990
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01550016/
关键词：
Plsama CVD Photo-CVD,LPCVD Cubic sic 3C-SiC Low Temperature Growth Heteroepitaxy,Crystal Growth,3C-SiC

项目摘要

3C-SiC films were grown on Si substrates by plasma-assisted chemical vapor deposition (PCVD) and low pressure chemical vapor deposition (LPCVD) at 700-1500^ﾟC using Si_2H_6 and C_2H_2. Single crystalline SiC films were grown above 900^ﾟC. Polycrystalline SiCFilms were grown below 900^.C. The growth rate of PCVD was higher than LPCVD below 800^0C. The growth Kinetics was investigated by measuring the growth rate. The decomposition process of source gases was investigated by quadrapole mass spectroscopy (QMS). It was clarified that the radicals produced from Si_2H_6 played an important role below 800^ﾟC.The growth rate in PCVD was higher than LPCVD below 800^ﾟC. In LPCVD, the activation energy was 13 Kcal/mol above 800^ﾟC, and 31 Kcal/mol below 800^ﾟC. In PCVD, the activation energy was equal to the value in LPCVD above 800^ﾟC, and the growth rate was almost constant.The growth rate was constant, even if C_2H_2 or H_2 flow rate increased in the temperature range of 750-1000^ﾟC both with and without plasma-assistance. The fact that the growth rate was independent on H_2 flow rate indicates that the limiting process of the growth rate is not the diffusion of chemical species in In LPCVD, the reaction is first order in low temperature region, and second order in high temperature region, which indicates that bi-molecular reaction related to Si_2H_6 occurs in high temperature region.Single crystalline SiC films were grown on Si (111) substrates above 900^ﾟC by PCVD and LPCVD. The growth rate in PCVD was higher than LPCVD below 800^ﾟC. Growth Kinetics was considered from growth rates and QMS.

采用等离子辅助化学气相沉积（PCVD）和低压化学气相沉积（LPCVD）在700-1500^ﾟC温度下使用Si_2H_6和C_2H_2在Si衬底上生长3C-SiC薄膜，在900^ﾟ以上生长单晶SiC薄膜。 C.多晶SiC薄膜在900℃以下生长。PCVD的生长速率高于。通过测量生长速率，研究了800^0C以下的LPCVD生长动力学。通过四极杆质谱（QMS）研究了源气体的分解过程，阐明了Si_2H_6在800^ﾟ以下产生的自由基发挥了重要作用。 C.在 800^ﾟC 以下时，PCVD 的生长速率高于 LPCVD。在 LPCVD 中，活化能为在800^ﾟC以上为13 Kcal/mol，在800^ﾟC以下为31 Kcal/mol。在PCVD中，活化能在800^ﾟC以上与LPCVD中的值相等，并且生长速率几乎恒定。即使C_2H_2或H_2流量在750-1000^ﾟC温度范围内增加，无论有无生长速率与H_2流量无关的事实表明，生长速率的限制过程不是化学物质的扩散。在LPCVD中，反应在低温区为一级反应，在低温区为二级反应。高温区，表明与Si_2H_6有关的双分子反应发生在高温区。采用PCVD法在900^ﾟC以上的Si(111)衬底上生长单晶SiC薄膜， LPCVD。从生长速率和QMS 考虑，PCVD 的生长速率高于800^ﾟC 下的LPCVD。