Control of Composition Ratio of Alloy Films by New Magnetron Sputtering and Application to a Joining of Metal-Seramics

新型磁控溅射合金薄膜成分比例控制及其在金属陶瓷连接中的应用

基本信息

批准号：
01850067
负责人：
NAKASHIMA Takayoshi
金额：
$ 1.28万
依托单位：
Toyama National College of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B).
财政年份：
1989
资助国家：
日本
起止时间：
1989 至 1990
项目状态：
已结题

项目摘要

We propose a new method to control a composition ratio of metal alloy film by new magnetron sputtering method. This magnetron sputtering source has two magnetic coils, one is a conventional magnetron coil behind the target (Bm) and the other is a compressing coil (Bc) to increase magnetic field parallel to the target surface. The Bm and Bc can control the special position of intense plasma on the target surface. Experiments were performed concentric circular target jointed together Cu plate (75 phi) and Ti plate (35 phi). A Cu/Ti composition ratio can be controlled by the magnetic field Bc for constant Bm.The Cu/Ti ratio was estimated using an x-ray energy dispersive spectrometer. Ti content increases with increasing Bc because the plasma is concentrated on the Ti target. The Cu/Ti ratio is controlled from 20% to 80% by changing Bc.We can also fabricate multi-layer structure Cu-Ti alloy films with different composition ratio by different DC magnetic fields Bc. The sputtered films showed the uniform quality around 40mm phi on the film surface.We carried out a ceramic_-ceramic and ceramic_-metal joining using the sputtered films. The contact angle of molten Cu-Ti alloys containing Ti content up to 60 at. % on SiC was investigated by a sessile drop technique at 1373K in vacuum, and the joining of SiC to SiC and Al_2O_3 to Al_2O_3 were conducted using sputtered films of Cu_-Ti, Ti and Zr.Ti and Zr depress the reaction of Cu with SiC by forming TiC, Ti_3SiC_2 carbides and ZrC respectively. The fracture shear testing of SiC and Al_2O_3 joints were carried out at room temperature. The joining strength of SiC and Al_2O_3 using sputtered films ofCu_-Ti, Ti and Zr are lower than that of ceramics using amorphous filler metals of Cu_-Ti.

我们提出了一种通过新的磁控溅射方法来控制金属合金膜的成分比的新方法。该磁控溅射源有两个磁性线圈，一个是位于靶材后面的传统磁控线圈（Bm），另一个是压缩线圈（Bc），用于增加平行于靶材表面的磁场。 Bm和Bc可以控制强等离子体在靶表面的特殊位置。实验采用将铜板 (75 phi) 和钛板 (35 phi) 连接在一起的同心圆形靶材进行。 Cu/Ti组成比可以通过恒定Bm的磁场Bc来控制。使用X射线能量色散光谱仪估计Cu/Ti比。 Ti 含量随着 Bc 的增加而增加，因为等离子体集中在 Ti 靶上。通过改变Bc将Cu/Ti比例控制在20%~80%之间。通过不同的直流磁场Bc也可以制备不同成分比例的多层结构Cu-Ti合金薄膜。溅射薄膜在膜表面直径40mm左右表现出均匀的质量。我们利用溅射薄膜进行了陶瓷-陶瓷和陶瓷-金属连接。含Ti含量的熔融铜钛合金的接触角高达60 at。采用真空中1373K的坐滴技术研究了SiC上的%，并利用Cu_-Ti、Ti和Zr溅射薄膜进行了SiC与SiC以及Al_2O_3与Al_2O_3的接合。Ti和Zr抑制了Cu与SiC的反应。分别形成TiC、Ti_3SiC_2碳化物和ZrC。在室温下对SiC和Al_2O_3接头进行了断裂剪切试验。使用Cu_-Ti、Ti和Zr溅射薄膜的SiC和Al_2O_3的接合强度低于使用Cu_-Ti非晶填充金属的陶瓷的接合强度。