Investigation and Applications of New Electronic Phenomena in the Composite Devices of Supercomductors and Semiconductors.

超导与半导体复合器件中新电子现象的研究与应用。

• 批准号: 62420020
• 负责人: HAYAKAWA Hisao
• 金额: $ 19.01万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (A)
• 财政年份: 1987
• 资助国家: 日本
• 起止时间: 1987 至 1990
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-62420020/
• 关键词: Superconducting device; SNS junction; InSb; three terminal device; Nb; 超伝導体ー半導体結合; 近接効果; 超伝導半導体結合; 超伝導ー半導体結合; 電子デバイス

Recent developments of computer technologies can give us comfortable living circumstances. The basic technology of the recent high performance computers is the microelectronics appeared in large scale integrated circuits. However, demands of high speed and high density integration against the electronic devices now become more and more increased. In these circumstances, the conventional electronic devices based on the semiconductors may reach at their final limit of performance. New electronic devices, now are requested to answer the hard demands for the electronic devices. Superconduvices are one of the candidates.In this research, Si and InSb semiconductors were examined for their activities as a component of the hybrid device of superconductors and semiconductors. Several types of SNS (super/normal/super) junctions were investigated. Although Si was found to flow supercurrents through the SNS junction, the carrier density was too small to operate at low temperatures. On the other hand, InSb was found to be an important candidate of semiconductors for the application of low temperature superconducting devices such as three terminal devices, because the coherence length was as long as 40um with a carrier density of 10^<17> cm^<-3> at 4.2K.

计算机技术的最新发展可以给我们带来舒适的生活环境。当今高性能计算机的基础技术是大规模集成电路中出现的微电子技术。然而，现在对电子器件的高速、高密度集成的要求越来越高。在这些情况下，基于半导体的传统电子器件可能达到其最终性能极限。现在要求新的电子设备来满足对电子设备的严格要求。超导体是候选者之一。在这项研究中，研究了硅和锑半导体作为超导体和半导体混合器件的组成部分的活性。研究了几种类型的 SNS（超级/正常/超级）连接。尽管人们发现Si可以通过SNS结流过超电流，但载流子密度太小而无法在低温下工作。另一方面，InSb被发现是应用于三端器件等低温超导器件的重要半导体候选者，因为其相干长度长达40um，载流子密度为10^<17>cm^。 <-3> 4.2K。

项目成果

A.Fujimaki: "Experimental Analysis of YBa2Cu3Ox/Ag Proximity Interfaces" Jpn.J.Appl.Phys.29. L1659-L1662 (1990)

A.Fujimaki：“YBa2Cu3Ox/Ag 邻近界面的实验分析”Jpn.J.Appl.Phys.29。

K.Ohbayashi: "High Tc(95K) AsーGrown Superconducting BiーSrーCaーCuーO Thin Films" Jpn.J.Appl.Phys.29. L2049-2052 (1990)

K.Ohbayashi：“高 Tc(95K) 生长超导 Bi-Sr-Ca-Cu-O 薄膜”Jpn.J.Appl.Phys.29 (1990)。

T.Hatou;Y.Takai;H.Hayakawa: Japan.J.Appl.Phys.Lett.27. L617-L618 (1988)

T.Hatou；Y.Takai；H.Hayakawa：日本.J.Appl.Phys.Lett.27。

A. Fujimaki: "Experimental Analysis of YBa2Cu30x/Ag Proximity Interfaces" Jpn. J. Appn. Phys.L1659. 29(9) (1990)

A. Fujimaki：“YBa2Cu30x/Ag 邻近界面的实验分析”Jpn。

M.Inoue,E.Takase,Y.Takai and H.Hayakawa: "Preparation of Y-Ba-Cu-O thin Films by CVD method in a Vacuum-evaporation-type Reacter" Japan.J.Appl.Phys.Lett.28. L1575-L1577 (1989)

M.Inoue、E.Takase、Y.Takai 和 H.Hayakawa：“在真空蒸发型反应器中通过 CVD 方法制备 Y-Ba-Cu-O 薄膜”Japan.J.Appl.Phys.Lett。