Development of Laser Terahertz Technology

太赫兹激光技术的发展

基本信息

批准号：
11231202
负责人：
HANGYO Masanori
金额：
$ 46.72万
依托单位：
OSAKA UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research on Priority Areas
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11231202/
关键词：
terahertz wave ultrashort laser pulse superconductor semiconductor nonlinear optical effect magnetic semiconductor terahertz spectroscopy terahertz imaging high-Tc superconductor ultrashort optical pulse supercurrent mapping terahert

项目摘要

In this project, we summarized the result of the project supported by Grant-in-Aid for Scientific Re search for Priority Area "Development of Laser Terahertz Technology"(FY1999-FY2001). Through the meeting by the project members, a report of the project is made. The results of the project are summarized as follows.1. The characteristics of the terahertz radiation from high-To superconductors excited by ultrashort laser pulses have been clarified and the apparatus for visualizing supercurrent distribution in high-Tc superconducting films has been developed. The various terahertz spectroscopic and imaging systems for various purposes are also developed and applied to semiconductors, superconductor, photonic crystals and biomolecules.2. The characteristics of the terahertz radiation from the semiconductor InAs are investigated by changing external magnetic field, incident angle, laser pulse width, temperature etc, and the condition for the most appropriate radiation has been found. It is also found that the radiation intensity becomes maximum at about 3 T, and decreases and increases again with further increasing the magnetic field up to 15 T.3.The terahertz spectroscopy of the semimagnetic semiconductor Ga_<1-x>Mn_xAs has been done. It is found that the absorption changes largely near the critical temperature and this result is explained by the carrier hopping. The change of the Lattice vibration of La_<1-x>Sr_xMnO_3 with the transitions among the diamagnetic insulating, ferromagnetic metallic and ferromagnetic insulating phases has been made clear experimentally.4. The tunable terahertz radiation up to 20 THz is realized by the nonlinear optical effect (difference frequency mixing) by the organic crystal DAST.Through this project, the importance of the terahertz technology is realized overall in Japan.

在该项目中，我们总结了赠款支持该项目的结果，以科学搜索优先领域“激光Terahertz技术的开发”（2001年第2001财年）。通过项目成员的会议，将对项目报告。该项目的结果总结如下1。已经阐明了超短激光脉冲激发的高超导体的Terahertz辐射的特征，并且已经开发出用于可视化高-TC超导膜中超电流分布的设备。用于各种目的的各种Terahertz光谱和成像系统也被开发并应用于半导体，超导体，光子晶体和生物分子2。通过更改外部磁场，入射角，激光脉冲宽度，温度等，研究了来自半导体INA的Terahertz辐射的特征，并且发现了最合适的辐射的状况。还发现，辐射强度在大约3 t时最大化，并且随着磁场的进一步增加至15 t。。发现吸收的变化在很大程度上会在临界温度附近，并且该结果由载体跳跃来解释。 LA_ <1-x> sr_xmno_3的晶格振动的变化随透射磁性绝缘，铁磁金属和铁磁绝缘阶段之间的过渡的变化已在实验上清楚地表明。4。有机晶体dast的非线性光学效应（差异频率混合）实现了可调的Terahertz辐射。