Development of a nanoscale point-defect analysis method using convergent-beam electron diffraction and its application to point-defect-induced properties

使用会聚束电子衍射的纳米级点缺陷分析方法的开发及其在点缺陷诱导特性中的应用

• 批准号: 17510083
• 负责人: TSUDA Kenji
• 金额: $ 2.3万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2005
• 资助国家: 日本
• 起止时间: 2005 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17510083/
• 关键词: transmission electron microscopy; nano-materials; lattice defect; CBED; strain distribution; 物性実験

The present research project aimed to develop a method to quantitatively analyze the atomic structure and distribution of point defects and the local lattice strain of their surrounding areas in a nanometer-scale spatial resolution.Impurity-doped Si was used as a test specimen containing point defects, in which anomalous intensity increase was found in rocking curves of low-order reflections of convergent-beam electron diffraction (CBED) patterns. In order to clarify the relationship between the anomalous intensity and the strain due to point defects, the intensities of the anomalous rocking curves were measured from specimens with various doping amounts using an energy-filter transmission electron microscope.The specimen preparation method not to cause the anomalous intensity was established. It was also found that the anomalous intensity increase can be caused by not only doped impurity atoms but also the atoms and small clusters induced by ion implantation.Simulation programs for the rocking curves was developed based on the statistical-dynamical diffraction theory, the multi-slice method and the Howie-Whelan's method. Simulations of rocking curves were performed using various strain distribution models and were compared with the experimental data.As a result, we have demonstrated that the anomalous CBED rocking curves can be explained by a strain-relaxation model with lattice bending. This implies that the CBED rocking curves of the low-order reflections can be successfully used for the determination of local strain distributions with a nanometer-scale spatial resolution.Local lattice strains of semiconductor devices have been so far examined using higher-order Laue zone (HOLZ) line patterns of CBED. The present method enables us to analyze such highly strained areas as HOLZ lines are blurred or unclear, to which the HOLZ line method cannot be applied.

本研究项目旨在开发一种定量分析点缺陷的原子结构和分布的方法，以及其周围地区的局部晶格应变，以纳米尺度的空间分辨率进行。Inmpurity-compority-compedsed Si被用作包含点缺陷的测试标本，其中在收敛梁电子衍射（CBED）模式的低阶反射曲线中发现异常强度增加。为了阐明异常强度与因点缺陷引起的应变之间的关系，使用能量过滤器透射电子显微镜从具有各种掺杂量的标本中测量了异常摇动曲线的强度。样品制备方法不引起该方法，以免引起该方法。建立了异常强度。还发现，异常强度的增加不仅是由掺杂的杂质原子，而且还由离子植入引起的原子和小簇引起的。摇摆曲线的示意计划是基于统计 - 动力学衍射理论，是多种多样的。切片方法和Howie-Whelan的方法。使用各种应变分布模型进行了摇摆曲线的模拟，并将其与实验数据进行了比较。结果，我们已经证明，可以通过带有晶格弯曲的应变 - 浮肿模型来解释异常的CBED摇动曲线。这意味着低阶反射的CBED摇摆曲线可以成功地用于用纳米尺度空间分辨率来确定局部应变分布。迄今已使用高阶俗人区（迄今为止）检查了半导体设备的局部晶格菌株（ HOLZ）CBED的线模式。目前的方法使我们能够分析高度紧张的区域，因为HOLZ线是模糊的或不清楚的，无法应用HOLZ线方法。

项目成果

Strain analysis of arsenic-doped silicon using CBED rocking curves of low-order reflertiong

使用低阶反射的 CBED 摇摆曲线进行砷掺杂硅的应变分析

• 发表时间: 2007
• 期刊: Journal of Electron Microscopy (in press)
• 作者: Yuuji TUJIKO;Makoto KAWAMURA;太田 泰雄;Yasuo OHTA;Ralf Theissmann;Kenji Tsuda;Ralf Theissmann;Kenji Tsuda
• 通讯作者: Kenji Tsuda

Charge density analysis of Si using convergent-beam electron diffraction

使用会聚束电子衍射分析 Si 的电荷密度

• 发表时间: 2006
• 期刊: Materia 45-12 (in Japanese)
• 作者: Yuuji TUJIKO;Makoto KAWAMURA;太田 泰雄;Yasuo OHTA;Ralf Theissmann;Kenji Tsuda;Ralf Theissmann;Kenji Tsuda;Takayuki Akaogi;Takayuki Tajiri;小形曜一郎;赤荻隆之;Takayuki Akaogi;Takayuki Tajiri;Yoichiro Ogata
• 通讯作者: Yoichiro Ogata

A transmission electron microscopy study on the real structure of synthetic hematite

• DOI: 10.1007/s10853-007-1718-3
• 发表时间: 2009-03
• 期刊: Journal of Materials Science
• 影响因子: 4.5
• 作者: R. Theissmann;H. Fuess,;K. Tsuda;M. Terauchi

収束電子回折法によるSiの電子密度分布解析

使用会聚电子衍射法分析 Si 的电子密度分布

• 发表时间: 2006
• 期刊: まてりあ 45・12
• 作者: Yuuji TUJIKO;Makoto KAWAMURA;太田 泰雄;Yasuo OHTA;Ralf Theissmann;Kenji Tsuda;Ralf Theissmann;Kenji Tsuda;Takayuki Akaogi;Takayuki Tajiri;小形曜一郎
• 通讯作者: 小形曜一郎

第5版 実験化学講座 11巻 物質の構造[III]回折

第五版实验化学课程第11卷物质结构[III]衍射

• 发表时间: 2006
• 作者: Yuuji TUJIKO;Makoto KAWAMURA;太田 泰雄;Yasuo OHTA;Ralf Theissmann;Kenji Tsuda;Ralf Theissmann;Kenji Tsuda;Takayuki Akaogi;Takayuki Tajiri;小形曜一郎;赤荻隆之;Takayuki Akaogi;Takayuki Tajiri;Yoichiro Ogata;Takayuki Akaogi;津田健治(共著)
• 通讯作者: 津田健治(共著)