Study of ZnS epitaxial layer by triple co-doping method

三重共掺杂法ZnS外延层的研究

• 批准号: 16560286
• 负责人: KISHIMOTO Seiichi
• 金额: $ 1.92万
• 依托单位: Kochi University of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16560286/
• 关键词: vapor phase epitaxy; zinc sulfide; Hall effect measurement; doping; co-doping; epitaxial growth; エピタキシャル成長; 気相成長法

In order to realize the blue-light-emitting devices, we have investigated the influence of systematically varying of temperature of In source in the range from 550 to 800℃ on N incorporation, microstructures and electrical properties of triple-codoped ZnS thin films. A series of vapor-phase epitaxial ZnS : (Ag,In, and N) films were prepared on semi-insulating GaAs (100) substrates with H_2+NH_3 gas flow. The amount of NH_3 flow varied from 100 to 500 ccm. The Ag source temperature was kept at 950℃.On the basis of the analysis of N profiles obtained by SIMS measurements, an increase in N concentrations with increasing an incorporation of In acceptors and In-reactive donors was deduced. Hall measurements using the Van der Pauws method at room temperature revealed that free hole concentrations and Hall mobility range (1.31-8.76)×10^<18> cm^<-3> and 58.4-80.5 cm^2/Vs, respectively.It was established that the growth conditions with the amount of NH_3 flow varying from 200 to 300 ccm and In source about 650 to 750℃ in temperature are very effective for the realization of good p-type ZnS : (Ag,In,N) with high Hall mobility.

为了实现蓝光发射器件，我们研究了在550至800℃范围内系统地改变In源温度对三重共掺杂ZnS系列薄膜的N掺入、微观结构和电性能的影响。气相外延ZnS：在半绝缘GaAs(100)衬底上用H_2+NH_3气流制备(Ag、In、N)薄膜。 NH_3流量从100到500 ccm变化，Ag源温度保持在950℃。根据SIMS测量获得的N分布分析，N浓度随着In受体和In反应供体掺入的增加而增加。室温下使用 Van der Pauws 方法推断出霍尔测量结果表明自由空穴浓度和霍尔迁移率范围为 (1.31-8.76)×10^<18>。 cm^<-3> 和 58.4-80.5 cm^2/Vs 分别。确定了 NH_3 流量从 200 到 300 ccm 变化以及源温度大约 650 到 750℃ 的生长条件是非常有效的用于实现具有高霍尔迁移率的良好 p 型 ZnS : (Ag,In,N)。