Research on preparations of precise-resistance thin-film materials having higher resistivity with zero-temperature dependence

零温度依赖性高电阻率精密电阻薄膜材料的制备研究

基本信息

批准号：
16560267
负责人：
SATO Yuichi
金额：
$ 1.98万
依托单位：
Akita University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2006
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16560267/
关键词：
thin film sputtering resistance

项目摘要

In this research, preparations of novel thin film resistance materials which have small temperature coefficient of resistance (TCR) and higher resistivities compared with those of the usual materials were investigated. Firstly, effects of nitrogen, oxygen and substrate temperatures on electrical properties of ZnO : In thin films were investigated. The TCR showed minimum value when In_2O_3 was added to ZnO at 9 wt%. The resistivities decreased with increasing of N_2 partial pressure, whereas the resistivities increased with the increasing of N_2 partial pressure when it was over 20 %. Carrier concentration of the ZnO based films became high as 10^<20>cm^<-3> when Al_2O_3 was added to ZnO at 2 wt%. Resistivity of the films increase from 10^<-3> to 1 Ω・cm by adding Cu to the films, and their TCR became low within 100 ppm/℃ Moreover, resistivity of the ZnO films increased from 10^<-1> to 10^3 Ω・cm by mixing MgO to the films. Degenerated Al_2O_3 added ZnMgO films kept high carrier concentration, whereas Hall mobility of them was extremely low and their resistivity increased to about 3×10^<-3> Ω・cm. Their TCR showed within 50 ppm/℃. The resistivities showed much higher value when the substrate material was changed from sapphire single crystals to quartz glasses.

在这项研究中，研究了具有较小温度抗性系数（TCR）的新型薄膜抗性材料的制剂，并研究了较高的耐药性比较与常规材料的耐药性比较。首先，研究了氮，氧和底物温度对ZnO的电性能的影响：在薄膜中。当以9 wt％添加IN_2O_3时，TCR显示出最小值。耐药性随着N_2二压的增加而降低，而耐药物在超过20％的情况下随着N_2的二压增大而增加。当以2 wt％添加Al_2O_3时，基于ZnO的膜的载体浓度高达10^<20> cm^<-3>。膜的电阻率从10^<-3>增加到1Ωcm，通过将Cu添加到膜中，其TCR在100 ppm/℃之内变得较低，此外，ZnO膜的抗性从10^<-1>> <1>> 10^3Ωcm增加，通过将MGO混合到膜中。退化的Al_2O_3添加了Znmgo膜保持高载体的浓度，而霍尔的迁移率极低，其抗性增加到约3×10^<-3> ω・cm。他们的TCR显示在50 ppm/℃以内。当底物材料从蓝宝石单晶变为石英玻璃时，抗性显示出更高的值。

项目成果

期刊论文数量（22）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Growth of ZnO films on quartz glass substrates having recrystallized ZnO under layers and their crystallinities

ZnO 薄膜在具有再结晶 ZnO 下层的石英玻璃基板上的生长及其结晶度

DOI：
发表时间：
2007
期刊：
Abstract of the 15^<th> International Conference on Crystal Growth (to be published)
影响因子：
0
作者：
Yoko Amano;Hiroyuki Kajiwara;Toshifumi Suzuki
通讯作者：
Toshifumi Suzuki

Preparations and electrical properties of Al, Cu co-doped ZnO thin films

Al、Cu共掺杂ZnO薄膜的制备及电学性能

DOI：
发表时间：
2006
期刊：
Abstracts of the Annual Meeting of the Ceramic Society of Japan 170
影响因子：
0
作者：
Masayuki Nishitani;Tomoki Nagao;Daigo Yonetsu;Takehisa Hara;Shigeki Shimada;Yuichi Sato
通讯作者：
Yuichi Sato

AlとCuを同時に添加したZnO系薄膜の作製と電気的特性

同时添加Al和Cu的ZnO薄膜的制备及电学性能

DOI：
发表时间：
2006
期刊：
日本セラミクス協会2006年年会講演予稿集
影响因子：
0
作者：
Yoko Amano;Hiroyuki Kajiwara;Toshifumi Suzuki;佐藤祐一
通讯作者：
佐藤祐一

Preparations of ultra-precision resistors with ultra-high resistivity by introducing indium and nitrogen to ZnO semiconductor thin-films

ZnO半导体薄膜引入铟和氮制备超高电阻率超精密电阻器

DOI：
发表时间：
2004
期刊：
Proceedings of International Workshop on Resource Science and Engineering of Rare Metals
影响因子：
0
作者：
西谷真幸;長尾智記;米津大吾;原武久;島田茂樹;Yuichi Sato
通讯作者：
Yuichi Sato

lnvestigation of ZnO based thin films as resistance materials with small temperature coefficients

ZnO基薄膜作为小温度系数电阻材料的研究