Research on preparations of precise-resistance thin-film materials having higher resistivity with zero-temperature dependence

零温度依赖性高电阻率精密电阻薄膜材料的制备研究

• 批准号: 16560267
• 负责人: SATO Yuichi
• 金额: $ 1.98万
• 依托单位: Akita University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16560267/
• 关键词: thin film; sputtering; resistance

In this research, preparations of novel thin film resistance materials which have small temperature coefficient of resistance (TCR) and higher resistivities compared with those of the usual materials were investigated. Firstly, effects of nitrogen, oxygen and substrate temperatures on electrical properties of ZnO : In thin films were investigated. The TCR showed minimum value when In_2O_3 was added to ZnO at 9 wt%. The resistivities decreased with increasing of N_2 partial pressure, whereas the resistivities increased with the increasing of N_2 partial pressure when it was over 20 %. Carrier concentration of the ZnO based films became high as 10^<20>cm^<-3> when Al_2O_3 was added to ZnO at 2 wt%. Resistivity of the films increase from 10^<-3> to 1 Ω・cm by adding Cu to the films, and their TCR became low within 100 ppm/℃ Moreover, resistivity of the ZnO films increased from 10^<-1> to 10^3 Ω・cm by mixing MgO to the films. Degenerated Al_2O_3 added ZnMgO films kept high carrier concentration, whereas Hall mobility of them was extremely low and their resistivity increased to about 3×10^<-3> Ω・cm. Their TCR showed within 50 ppm/℃. The resistivities showed much higher value when the substrate material was changed from sapphire single crystals to quartz glasses.

在本研究中，与普通材料相比，具有较小电阻温度系数（TCR）和较高电阻率的新型薄膜电阻材料的制备首先研究了氮、氧和衬底温度对ZnO电性能的影响：在薄膜中，当ZnO中添加9wt%的In_2O_3时，TCR呈现最小值，电阻率随着N_2分压的增加而降低，而电阻率随着N_2分压的增加而增加。当Al_2O_3以2wt％添加到ZnO中时，ZnO基薄膜的载流子浓度从10^<-增加到10^20cm^-3。 3> 通过向薄膜中添加Cu，其电阻率降低至1 Ω·cm，TCR降低至100 ppm/℃以内，此外，ZnO薄膜的电阻率从添加MgO的简并Al_2O_3薄膜保持了较高的载流子浓度，其霍尔迁移率极低，电阻率增加至约3×10^<-，从10^<-1>到10^3Ω·cm。 3> Ω·cm。当衬底材料从蓝宝石单晶改为石英时，电阻率显示出更高的值。眼镜。

项目成果

Growth of ZnO films on quartz glass substrates having recrystallized ZnO under layers and their crystallinities

ZnO 薄膜在具有再结晶 ZnO 下层的石英玻璃基板上的生长及其结晶度

• 发表时间: 2007
• 期刊: Abstract of the 15^<th> International Conference on Crystal Growth (to be published)
• 作者: Yoko Amano;Hiroyuki Kajiwara;Toshifumi Suzuki
• 通讯作者: Toshifumi Suzuki

Preparations and electrical properties of Al, Cu co-doped ZnO thin films

Al、Cu共掺杂ZnO薄膜的制备及电学性能

• 发表时间: 2006
• 期刊: Abstracts of the Annual Meeting of the Ceramic Society of Japan 170
• 作者: Masayuki Nishitani;Tomoki Nagao;Daigo Yonetsu;Takehisa Hara;Shigeki Shimada;Yuichi Sato
• 通讯作者: Yuichi Sato

AlとCuを同時に添加したZnO系薄膜の作製と電気的特性

同时添加Al和Cu的ZnO薄膜的制备及电学性能

• 发表时间: 2006
• 期刊: 日本セラミクス協会2006年年会講演予稿集
• 作者: Yoko Amano;Hiroyuki Kajiwara;Toshifumi Suzuki;佐藤 祐一
• 通讯作者: 佐藤 祐一

Preparations of ultra-precision resistors with ultra-high resistivity by introducing indium and nitrogen to ZnO semiconductor thin-films

ZnO半导体薄膜引入铟和氮制备超高电阻率超精密电阻器

• 发表时间: 2004
• 期刊: Proceedings of International Workshop on Resource Science and Engineering of Rare Metals
• 作者: 西谷真幸;長尾智記;米津大吾;原武久;島田茂樹;Yuichi Sato
• 通讯作者: Yuichi Sato

Investigation of ZnO based thin films as resistance materials with small temperature coefficients

ZnO基薄膜作为小温度系数电阻材料的研究

• 发表时间: 2006
• 期刊: Advances in Science and Technology 45
• 作者: 米津大吾;長尾智記;西谷真幸;原武久;島田茂樹;天野耀鴻;Yuichi Sato
• 通讯作者: Yuichi Sato