Study on the Epitaxial Growth of Oxide Films in Sputtering focusing on Negative Oxygen Ion Behavior

关注负氧离子行为的溅射氧化膜外延生长研究

• 批准号: 16540454
• 负责人: OKIMURA Kunio
• 金额: $ 2.24万
• 依托单位: Tokai University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16540454/
• 关键词: oxide material; ICP-assisted sputtering; epitaxial growth; titanium dioxide; high-density plasma; negative oxygen ion; vanadium dioxide; in-situ sputtering; 酸素ラジカル生成; ルチル型Ti酸化膜; アナターゼ型Ti酸化膜; アニール挙動

In this project, we performed depositions of titanium dioxide films on single crystalline MgO substrates by using inductively coupled plasma (ICP)-assited sputtering. In addition, we fabricated a new sputtering device which can realize in-situ sequential depositions utilizing movable multi targets.Through depositions of titanium dioxide (TiO_2) films on MgO substrates, we showed oriented growth of rutile-type crystalline films having in-plane two orientations. It is interpreted that higher density plasma production and lowered target self bias voltage in ICP-assisted sputtering brig about epitaxial growth of high-temperature stable phase of rutile Ti0_2. Based on the Langmuir probe studies which were done by the cooperation with co-researcher, Professor Haruo Shindo, kinetic effects of negative oxygen ions are supposed to be very important issue due to their effects different from positive ions. This issue of the roles of negative oxygen ions and active oxygen atoms is to be continued … More in next study. In addition to the TiO_2 growth on MgO substrates, we performed deposition of Nb-doped TiO_2 films on SrTiO_3 single substrates. As the results, transparent TiO_2 films with lower resistivity on the order of 10^<-4> Ωcm were achieved.Further, we deposited vanadium dioxide (VO_2) films by using ICP-assisted sputtering technique. As a promising result, we obtained stoichiometric VO_2, films which show metal-insulator transition at relatively low temperature around 65℃. Such film with transition characteristic can be applied to newly concept switching and memory devices.Newly fabricated sputtering device with in-situ changeable two targets enabled sequential sputter deposition of different kinds of material. As a representative, we performed depositions of ferromagnetic Co film on pre-deposited Al film. As the result, crystalline hcp-Co film was deposited on Al under-layer without the magnetron effect, revealing the potential ability to realize superior multi-layered film growth by the introduction of in-situ sequential deposition. Less

在该项目中，我们利用电感耦合等离子体（ICP）辅助溅射在单晶氧化镁基底上沉积二氧化钛薄膜。此外，我们制造了一种新型溅射装置，可以利用可移动的多靶材实现原位顺序沉积。通过在MgO基底上沉积二氧化钛（TiO_2）薄膜，我们展示了具有面内两个取向的金红石型晶体薄膜的定向生长。基于与合作研究员、教授合作进行的Langmuir探针研究，解释了ICP辅助溅射装置中金红石Ti0_2高温稳定相外延生长的更高密度的等离子体产生和更低的靶材自偏压。 Haruo Shindo，负氧离子的动力学效应被认为是非常重要的问题，因为它们的作用与正离子不同，负氧离子和活性氧原子的作用的问题待续……除了在 MgO 衬底上生长 TiO_2 之外，我们还在 SrTiO_3 单一衬底上沉积了 Nb 掺杂 TiO_2 薄膜，结果，透明 TiO_2 薄膜的电阻率较低，约为 10^<-4> Ωcm。此外，我们利用ICP辅助溅射技术沉积了二氧化钒（VO_2）薄膜，并获得了化学计量的结果。 VO_2，在65℃左右的相对较低温度下表现出金属-绝缘体转变的薄膜，这种具有转变特性的薄膜可应用于新概念的开关和存储器件。新制造的溅射装置具有原位可更换的两个靶材，可以连续溅射沉积不同的靶材。作为代表，我们在预沉积的 Al 薄膜上沉积了铁磁 Co 薄膜，结果，在没有磁控管的情况下，在 Al 底层上沉积了结晶 hcp-Co 薄膜。效应，揭示了通过引入原位顺序沉积实现优异的多层薄膜生长的潜在能力。

项目成果

Growth of VO_2 Films with Metal-Insulator Transition on Silicon Substrates by Inductively Coupled Plasma-Assisted Sputtering

硅衬底上电感耦合等离子体辅助溅射生长具有金属-绝缘体转变的VO_2薄膜

• 发表时间: 2005
• 期刊: Proceedings of 27^<th> International Symposium on Dry Process
• 作者: J.Takayama;K.Okimura;Kunio Okimura;Kunio Okimura;Kunio Okimura;Ken Okumura;Kunio Okimura
• 通讯作者: Kunio Okimura

Selective Growth of Rutile and Anatase TiO_2 Films on MgO substrate Using TiN Buffer Layer in Reactive Sputtering

反应溅射中TiN缓冲层在MgO基底上选择性生长金红石和锐钛矿TiO_2薄膜

• 发表时间: 2006
• 期刊: Proceedings of the 6^th International Conference on Reactive Plasmas and 23^rd Symposium on Plasma Processing
• 作者: S.Koike;T.Sakamoto;H.Kobori;H.Matsuura;H.Akatsuka;H.Akatsuka;Jun Takayama
• 通讯作者: Jun Takayama

Growth of VO_2 Films with Metal Insulator Transition on Silicon Substrates by Inductively Coupled Plasma Assisted Sputtering

硅衬底上感应耦合等离子体辅助溅射生长金属绝缘体转变的VO_2薄膜

• 发表时间: 2005
• 期刊: Proceedings of 27th International Symposium on Dry Process
• 作者: K.Okimura;N.Kubo
• 通讯作者: N.Kubo

Epitaxial Growth of Rutile TiO_2 Films on MgO Substrate in Inductively Coupled Plasma-Assisted Sputtering

电感耦合等离子体辅助溅射在MgO基体上外延生长金红石型TiO_2薄膜

• 发表时间: 2004
• 期刊: Japanese Journal of Applied Physics Vol.43, No.5B
• 作者: K.Okimura;T.Furumi;Kunio Okimura;Kunio Okimura
• 通讯作者: Kunio Okimura

Performance of Inductively Coupled Plasma Source with an External Coil for Sputtering of Titanium Oxide

带有外部线圈的感应耦合等离子体源用于氧化钛溅射的性能

• 发表时间: 2005
• 期刊: Proceedings of Plasma Science Symposium 2005/The 22^th Symposium on Plasma Processing
• 作者: J.Takayama;K.Okimura;Kunio Okimura;Kunio Okimura;Kunio Okimura;Ken Okumura
• 通讯作者: Ken Okumura