A BASIC STUDY ON METAL CMP MECHANISM AND A TRIAL FOR PRODUCING CMP SLURRY BY SOL-GEL METHOD

金属CMP机理的基础研究及溶胶-凝胶法生产CMP浆料的试验

基本信息

批准号：
15560101
负责人：
SHIBATA Junji
金额：
$ 2.37万
依托单位：
SHIBAURA INSTITUTE OF TECHNOLOGY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

项目摘要

Today, the drastic change of our life to the information society has been brought by the rapid popularization of computers, which are associated with highly integrated IC and LSI. The production of IC and LSI depends upon the development of micro-precision processing technologies. Chemical Mechanical Polishing(CMP) is the typical technology necessary for producing multi-layer circuits of IC and LSI by the damascene method on a silicon wafer, where the surface of each circuit layer must be made to be perfectly smooth. The required flatness for the surface finished by CMP in production process would be now less than 100 Å.In this study, first of all, production of colloidal silica slurry for CMP by sol-gel method was conducted in trial in our laboratory. Therefore, constitutions of the slurry used for the experiment are known clearly. Then, polishing experiments for glass materials were carried out with the trial slurry and its polishing properties such as stock removal, surface roughness, polishing torque, etc. were investigated under various polishing conditions (i.e., pH, grain size, slurry density of grains, pad material, etc.), comparing polishing properties of marketed slurries which include some unknown additives. As a result, we formulate a CMP mechanism model and it was proved that some polishing properties obtained in the experiments could be explained by the CMP mechanism modelOn the basis of the results obtained above, we conducted Metal CMP experiments and discussed Metal CMP mechanism. Finally, we get to a conclusion that there exists a similarity between Si CMP and Metal CMP, though it is complicated phenomena.

今天，计算机的迅速普及给我们的生活带来了巨大的变化，而这又与高度集成的IC和LSI相关。IC和LSI的生产依赖于微细加工技术的发展。机械抛光（CMP）是在硅片上采用镶嵌法生产IC和LSI多层电路所必需的典型技术，其中每个电路层的表面必须达到完全光滑的表面所需的平整度。完成的在生产过程中，通过 CMP 生产的硅浆料将小于 100 Å。本研究首先在我们的实验室中试制了溶胶-凝胶法用于 CMP 的胶体二氧化硅浆料，因此，我们对用于 CMP 的浆料的组成进行了研究。然后，用该试验浆料进行了玻璃材料的抛光实验，考察了其在不同抛光条件下的抛光性能，如切削量、表面粗糙度、抛光扭矩等。（即 pH、晶粒尺寸、颗粒的浆料密度、抛光垫材料等），比较包含一些未知添加剂的市售浆料的抛光性能，结果，我们制定了 CMP 机理模型，并证明了一些抛光性能。实验中得到的结果可以用CMP机理模型来解释。在上述结果的基础上，我们进行了金属CMP实验并讨论了金属CMP机理，最后我们得出结论：Si CMP和Metal CMP之间存在相似性。尽管这是复杂的现象。