Homogeneous growth of SiGe bulk crystals by using the traveling liquidus-zone method

采用移动液相线区法均匀生长 SiGe 块状晶体

• 批准号: 15560015
• 负责人: ADACHI Satoshi
• 金额: $ 2.37万
• 依托单位: Japan Aerospace and Exploration Agency
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560015/
• 关键词: Traveling Liquidus-zone Method; SiGe Compound Semiconductor; Estimation of Diffusion Coefficient; Estimation of Temperature Gradient; Numerical Simulation; Homogeneous Composition

Our aims are (1)to verify that the traveling liquidus-zone(TLZ) method [1]is applicable to the homogeneous crystal growth of not only III-V compounds but also IV-IV compounds, and (2)to grow homogeneous SiGe bulk crystals by using the TLZ method.In order to obtain homogeneous crystals, it is required to determine the optimum sample translation rate by calculating the theoretical TLZ model. This means that we must know the diffusion coefficient first. So we estimate the diffusion coefficient of 9.5×10^<-5> cm^2/s by comparing the numerical data obtained from the one-dimensional simulation with the experimental data. By using the estimated diffusion coefficient and the temperature gradient, the optimum sample translation rate of 0.234 mm/hr is calculated. Thus, by using the similar translation rate of 0.24 mm/hr to the calculated one, we succeed in growing the homogeneous bulk crystals of Si_<0.503>Ge_<0.497> with negligibly small deviation of the lattice constant, that is, about ±0.025 %.The one-dimensional simulation is also carried out in order to know whether the growth mode is the TLZ mode or other growth modes. From the simulation results, it is found that the growth mode should be the TLZ mode but the deviation is slightly large as compared with the experimentally determined deviation, ±0.05 %. However, the deviation of the lattice constant is still negligibly small. As a conclusion, we believe that the TLZ method is applicable to the crystal growth of not only III-V compounds but also IV-IV compounds.[1]K.Kinoshita et al., J.Crystal Growth,225(2001)59.

我们的目的是（1）验证旅行的液态液体区（TLZ）方法[1]适用于非iii-v ds的均匀晶体生长，但也适用于IV-IV化合物，以及（2）生长均匀的sige sige块晶体通过TLZ方法，为了获得理论TLZ模型的均匀晶体。使用实验数据。晶格个体座的微小偏差可忽略不计，即约±0.025％。一维模拟也被责任遵守以了解模拟结果，发现生长模式应该是TLZ模式，但与此相比，偏差略有大。实验确定的偏差很小。

项目成果

Numerical analysis of growth rates in the traveling liquidus-zone method

移动液相线法中增长率的数值分析

• 发表时间: 2004
• 期刊: J.Crystal Growth 270
• 作者: S.Adachi;K.Kinoshita;I.Yoshizaki;S.Yoda et al.
• 通讯作者: S.Yoda et al.

Homogeneous SiGe crystals grown by using the traveling liquidus-zone method

采用移动液相线法生长的均质 SiGe 晶体

• 期刊: J.Crystal Growth Accepted
• 作者: S.Adachi;K.Kinoshita;I.Yoshizaki;S.Yoda et al.
• 通讯作者: S.Yoda et al.