Establishment of coating technology of superhard carbon nitrides films based on the measurement of the surface reaction probabilities.

基于表面反应概率测量的超硬氮化碳薄膜涂层技术的建立

基本信息

批准号：
13555197
负责人：
ITO Haruhiko
金额：
$ 7.1万
依托单位：
Nagaoka University of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2004
项目状态：
已结题

项目摘要

Mechanically hard amorphous carbon nitride (α-CN_x) films were prepared by applying a combination of the RF bias voltage to the substrate and the chemical vapor deposition process using the decomposition reaction of BrCN with the microwave discharge flow of Ar. In order to obtain the mechanical hardness, following two experiments were made.[1]The first was the deposition with suppressing temperature rise of the substrate during the application of the RF bias voltage by circulating cooling water inside the substrate stage. When the substrate was cooled, the maximum hardness of the film was 17.5 GPa under the condition of -V_<RF>=30 V, being 【approximately equal】2 times higher than that prepared without cooling. From the IR spectra of the films, three-dimensional C-N network structure was observed. This result suggested that the substrate cooling is effective for maintaining the sp^3-hybridized bonding in the films and, consequently, for suppressing the relaxation of the internal stress of the film.[2]The second experiment was the pursed operation of the RF bias voltage in the range of -V_<RF>=40-100 V. Film formation became possible in this high -V_<RF> region by this operation, although films were not formed due to severe sputtering when this voltage was applied continuously. As a result of measurement of the microhardness, it was in the case that t_<on>/t_<off>【greater than or equal】7/3 to exceed maximum hardness, 17.5 GPa, obtained by applying continuous RF bias. Hardness of the films formed under the condition of T=1000 s was higher than that formed under T=100 s. The maximum hardness of the film was 46.1 GPa, being obtained under the condition of T=1000 s, -V_<RF>=100 V, and t_<on>/t_<off>=8/2. Under the condition of t_<on>/t_<off>=9/1, the films were not deposited. Therefore, the optimum condition of t_<on>/t_<off> lies between 8/2 and 9/1

通过向基底施加射频偏压和利用 BrCN 与微波放电流 Ar 的分解反应的化学气相沉积工艺相结合，制备了机械硬质非晶氮化碳 (α-CN_x) 薄膜。机械硬度，进行了以下两个实验。[1]第一个是通过在基板台内循环冷却水来抑制施加RF偏压期间基板温度升高的沉积。当基板冷却时，最大温度升高。在-V_<RF>=30 V条件下，薄膜的硬度为17.5 GPa，比未经冷却制备的薄膜硬度高【约】2倍。从薄膜的红外光谱中观察到三维C-N网络结构。这一结果表明，基底冷却对于维持薄膜中的 sp^3 杂化键合有效，从而抑制薄膜内应力的松弛。[2]第二个实验是。在-V_<RF>=40-100V范围内进行RF偏压的扫频操作。通过该操作，在该高-V_<RF>区域中可以进行成膜，尽管当该操作时由于严重的溅射而没有形成膜。显微硬度的测量结果是，在t_<on>/t_<off>【大于或等于】7/3的情况下，获得了超过最大硬度17.5GPa的情况。通过施加连续RF偏压，在T=1000 s条件下形成的薄膜的硬度高于在T=100 s条件下形成的薄膜，在T=1000 s条件下获得的薄膜的最大硬度为46.1 GPa。，-V_<RF>=100 V，且 t_<on>/t_<off>=8/2 的条件下。 t_<on>/t_<off>=9/1，薄膜未沉积，因此t_<on>/t_<off>的最佳条件在8/2和9/1之间。