Development of a Microwave-Laser Measurement Technique and Contactless Measurement of Conductivity of Silicon Wafer in an Infinitesimal Area

微波激光测量技术的发展及无限小区域硅片电导率的非接触测量

基本信息

批准号：
13555192
负责人：
JU Yang
金额：
$ 7.49万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555192/
关键词：
Microwave Laser Silicon Wafer Conductivity Electro-optic effect Quantitative Measurement Contactless High Resolution

项目摘要

1.Development of a microwave-laser measurement systemA measurement system for detecting the phase variation of a laser light occurring in an electro-optic crystal was developed. The phase variation is induced by the changed index of refraction when a microwave beam is applied to the electro-optic crystal. The variation of the polarized light of a femtosecond pulse laser generated due to the electro-optic effect was successfully detected; thereby the sampling of a high frequency microwave (millimeter-wave) becomes possible.2. Contactless measurement of conductivity of silicon wafer independent of the thicknessA method for quantitative measurement of electrical conductively of semiconductor wafers in a contactless fashion by using millimeter waves was developed, A high-frequency millimeter wave was used in order to ensure the transmitted millimeter wave attenuated rapidly inside the wafer so that the reflection from the bottom surface of the wafer can be neglected. Thereby it becomes possible only to consider the reflection on the top surface of the wafer and thus the millimeter wave response signal is not affected by the thickness of the wafer. In addition, in the experiment, both the amplitude and phase of the reflection coefficient are measured, and by using these two parameters it is possible to determine the conductivity independent of the permittivity of the semiconductor wafers.3. Measurement of conductivity distribution of silicon wafer with high spatial resolution and sensitivityDistribution of the conductivity of silicon wafer was measured by microwave imaging. An open-ended coaxial line sensor was used to increase the spatial resolution and the sensitivity of the measurement. The relationship of the amplitude of the reflection coefficient and the conductivity of a wafer was found to be linear. The demonstrated method could be used to determine conductivity distribution in the process of wafer manufacturing or during device fabrication.

1.微波激光测量系统的开发开发了用于检测电光晶体中发生的激光的相位变化的测量系统。当微波束施加到电光晶体上时，折射率的变化会引起相位变化。成功检测到飞秒脉冲激光因电光效应而产生的偏振光变化；从而使高频微波（毫米波）的采样成为可能。2．与厚度无关的硅片电导率非接触式测量开发了一种利用毫米波非接触式定量测量半导体晶片电导率的方法，采用高频毫米波以确保传输的毫米波快速衰减晶片内部的反射，因此可以忽略晶片底面的反射。从而可以仅考虑晶片顶表面上的反射，因此毫米波响应信号不受晶片厚度的影响。此外，在实验中，测量了反射系数的幅度和相位，通过使用这两个参数，可以确定与半导体晶片的介电常数无关的电导率。 3．高空间分辨率和高灵敏度硅片电导率分布测量通过微波成像测量硅片电导率分布。使用开放式同轴线传感器来提高测量的空间分辨率和灵敏度。发现反射系数的幅度与晶片的电导率之间的关系是线性的。所演示的方法可用于确定晶圆制造过程或器件制造过程中的电导率分布。