Research on functional electronic devices based on straind-Si on SiGe alloy substrates

基于SiGe合金基底应变硅的功能电子器件研究

• 批准号: 13555086
• 负责人: USAMI Noritaka
• 金额: $ 8.51万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555086/
• 关键词: Silicon Germanium; Molecular Beam Epitaxy; Multicomponent Zone-melting Method; Strain-controlled thin film; Modulation doping; Two-dimensional hole gas

The purpose of this research is to realize strain-controlled Si-based heterostructures with superior electronic properties on homemade SiGe substrates wish uniform Ge composition.Firstly, we tried to develop a feedback control system of the crystal-melt interface position and temperature based on in-situ monitoring system. Automatic recognition of the interface position was successful by binarization and differentiation of the CCD image. By utilizing newly developed system, we succeeded in growing SiGe with uniform composition. To improve the crystal quality, we systematically changed the temperature gradient at around the crystal-melt interface. At a result, systematic decrease of the line-width of the X-ray rocking curve and increase of the intensity were confirmed presumably due to the suppression of constitutional supercooling. In addition, crystal quality was found to be strongly dependent on the orientation of the seed crystal.On homemade SiGe, modulation doped structure with strained-Ge channel was grown by molecular beam epitaxy. Although improved carrier mobility was not achieved, controllability of strain was confiemed.

本研究的目的是在具有均匀Ge成分的自制SiGe衬底上实现具有优异电子性能的应变控制硅基异质结构。 - 现场监控系统。通过CCD图像的二值化和微分，成功实现了界面位置的自动识别。通过利用新开发的系统，我们成功地生长了成分均匀的SiGe。为了提高晶体质量，我们系统地改变了晶体-熔体界面周围的温度梯度。结果，确认了X射线摇摆曲线的线宽的系统性减小和强度的增加，推测是由于抑制了组织过冷。此外，晶体质量很大程度上取决于籽晶的取向。在自制的SiGe上，通过分子束外延生长了具有应变Ge沟道的调制掺杂结构。尽管没有实现载流子迁移率的改善，但应变的可控性得到了保证。

项目成果

N.Usami et al.: "Modification of the growth mode of Ge on Si(100) in the presence of buried Ge islands"J. Cryst. Growth. 227/228. 782-785 (2001)

N.Usami 等人：“在存在埋藏 Ge 岛的情况下，改变 Ge 在 Si(100) 上的生长模式”J。

N.Usami et al.: "Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution"Jpn. J. Appl. Phys.. 41. L37-L39 (2002)

N.Usami等人：“通过微观成分分布控制多晶SiGe的宏观吸收系数”Jpn。

K. Fujiwara, Ke. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguchi, K. Nakajima: "In situ observation of crystal growth behavior from silicon melt"J. Cryst. Growth. 243. 275-282 (2002)

K.藤原，Ke.

K.Sawano, K.Arimoto, Y.Hirose, S.Koh, N.Usami, K.Nakagawa, T.Hattori, Y.Shiraki: "Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures"J. Cryst. Growth. 251. 693-696 (2003)

K.Sawano、K.Arimoto、Y.Hirose、S.Koh、N.Usami、K.Nakakawa、T.Hattori、Y.Shiraki：“通过 CMP 平坦化 SiGe 虚拟衬底及其在应变 Si 调制掺杂结构中的应用

K.Kutsukake, N.Usami, K.Fujiwara, T.Ujihara, G.Sazaki, K.Nakajuna et al.: "Fabrication of homogeneous SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate"Jpn. J. Appl. Phys.. 42. L232-L234 (2003)

K.Kutsukake、N.Usami、K.Fujiwara、T.Ujihara、G.Sazaki、K.Nakajuna 等人：“通过 Ge 在 Si-on-insulator 衬底上的热扩散制造均质 SiGe-on-insulator”Jpn