Development of Scanning Capacitance Transient Spectroscopy and Characterization of Ultrathin Oxide/Silicon Interface

扫描电容瞬态光谱学的发展和超薄氧化物/硅界面的表征

基本信息

批准号：
13450014
负责人：
YOSHIDA Haruhiko
金额：
$ 7.68万
依托单位：
Himeji Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

项目摘要

In this research, scanning capacitance transient spectroscopy was developed for obtaining a spatial distribution of localized states and carrier lifetime. In this method, a wafer mapping of electrical characteristics can be obtained by scanning a contactless electrode on a wafer. In order to demonstrate the validity of the developed method, a wafer map of generation lifetime of minority carriers were measured. Zerbst method was applied to the contactless characterization for the measurement of a spatial distribution of carrier lifetime. By comparison with conventional Zerbst method, it was found that the contactless Zerbst method enabled us to obtain carrier lifetime as well as the conventional method. Furthermore, it was demonstrated that a wafer mapping of carrier lifetime could be characterized by using scanning capacitance transient spectroscopy.Moreover, a capacitance-frequency (C-f) method was applied to the characterization of heavy metal contamination. In this study, the characterization of generation lifetime, interface traps, and bulk traps based on the C-f measurement was carried out. The validity of this method was assured with the use of Cu-doped and Au-doped samples.Also, a capacitance-voltage (C-V) method was proposed to separately characterize charges in respective oxide films and interface traps at the respective interfaces of SOI (Silicon-on-Insulator) wafer. In the proposed C-V method, a capacitance of SOI-MOS capacitor is measured between a front-gate electrode and SOI body contact interconnected to a back-gate electrode. The respective oxide charges and interface traps are estimated from dependence of SOI-MOS capacitance on a front-gate or a back-gate voltage.

在这项研究中，开发了扫描电容瞬态光谱，以获得局域态和载流子寿命的空间分布。在该方法中，可以通过扫描晶圆上的非接触式电极来获得电特性的晶圆图。为了证明所开发方法的有效性，测量了少数载流子生成寿命的晶圆图。 Zerbst 方法应用于非接触表征，以测量载流子寿命的空间分布。通过与传统Zerbst方法的比较，发现非接触Zerbst方法使我们能够获得与传统方法一样的载流子寿命。此外，还证明了可以使用扫描电容瞬态光谱来表征载流子寿命的晶圆图。此外，将电容频率（C-f）方法应用于重金属污染的表征。在本研究中，基于 C-f 测量对发电寿命、界面陷阱和体陷阱进行了表征。使用Cu掺杂和Au掺杂样品保证了该方法的有效性。此外，提出了一种电容-电压（C-V）方法来分别表征各个氧化膜中的电荷和SOI各个界面处的界面陷阱（绝缘体上硅）晶圆。在所提出的C-V方法中，在前栅电极和与背栅电极互连的SOI体接触之间测量SOI-MOS电容器的电容。根据SOI-MOS电容对前栅或背栅电压的依赖性来估计相应的氧化物电荷和界面陷阱。