Integration of ultra-small plasma material processing device - fabrication of microscale plasma chip

超小型等离子体材料加工装置集成——微型等离子体芯片的制作

基本信息

批准号：
12555185
负责人：
TERASHIMA Kazuo
金额：
$ 8.58万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2001
项目状态：
已结题

项目摘要

In this project, as an example of the application to materials processing science, a plasma chip, an innovative material-processing device using microscale plasma, has been developed. A prototype plasma chip has been fabricated with microscale plasma generated using coplanar film electrodes (CFE). A plasma chip on which plasma-processing apparatuses are integrated have some advantages for processing compared to conventional ones. For instance, it is highly favorable due to its higher processing speed. The high processing speed results from a combination of high speeds of individual process due to the use of high-density microscale plasma and the possibility of parallel processing with integrated apparatus. The following results have been obtained in this project.(1) Using a specially controlled electric source, we have successfully obtained stable glow-type plasma using various plasma gas such as H2, Ar, CH4, N2, and O2 for more than 30 min.(2) The high density (above 10^<15>cm^<-3>) of the microscale plasma of plasma chip have been confirmed experimental by optical emission spectroscopy and Langmuir probe measurement, and computer simulation.(1) Plasma chemical vapor deposition (CVD) of carbon films using a CH4-H2 gas system and carbon nitride films using a CH4-N2 gas system have been performed with a prototype plasma chips. Deposits were characterized by scanning electron microcopy (SEM), electron probe microscopy analysis (EPMA), Auger electron spectroscopy (AES), Raman spectroscopy, infrared spectroscopy. From these characterizations, it was founded that we have obtained various carbon films easily, such as a glassy carbon and diamond-like carbon, and carbon nitride films with various contents of nitrides with a high deposition rate exceeding 1 μm/m.

在该项目中，作为材料加工科学应用的一个例子，开发了一种等离子体芯片，这是一种使用微型等离子体的创新材料加工装置，利用共面薄膜电极（CFE）产生的微型等离子体制造了原型等离子体芯片。与传统的等离子体处理装置相比，其上集成有等离子体处理装置的等离子体芯片具有一些优点，例如，由于其较高的处理速度，这是由各个高速度组合而成的。过程由于使用高密度微尺度等离子体和集成设备并行处理的可能性在该项目中获得了以下成果。（1）使用特殊控制的电源，我们成功地使用各种等离子体气体（例如，等离子体）获得了稳定的辉光型等离子体。 H2、Ar、CH4、N2、O2 30 min 以上。 (2) 等离子体芯片微尺度的高密度(10^<15>cm^-3>以上)已通过发射光谱实验证实(1)利用原型等离子体芯片进行了使用CH4-H2气体系统的碳膜和使用CH4-N2气体系统的氮化碳膜的等离子体化学气相沉积(CVD)。通过扫描电子显微镜（SEM）、电子探针显微镜分析（EPMA）、俄歇电子能谱（AES）、拉曼光谱、红外光谱进行表征。我们发现，我们可以轻松获得各种碳膜，例如玻璃碳和类金刚石碳，以及各种氮化物含量的氮化碳膜，沉积速率超过1μm/m。