Unidirectional Solidification of Solar Grade Silicon and lmpurities and Themal Stress Control of the Cast

太阳能级硅及杂质的单向凝固及铸件的热应力控制

基本信息

批准号：
11694128
负责人：
KAGAWA Yutaka
金额：
$ 5.63万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11694128/
关键词：
silicon solar cell electron beam melting vacuum melting coagulation refinement simulation continuous casting residual stress 電子b-ム応力シュミレーション

项目摘要

It is known that the quality of the silicon ingot made by the casting method is greatly influenced by the residual stress which exists in the material after solidification. However, the correct measuring method for the residual stress and the evaluating method of the result has not been established enough. The object of this research is to examine the measurement of the residual stress and the relation between the generation situation and the casting process in detail by international cooperation. Silicon was continuously cast with a equipment device that was installed in the Institute of Industrial Science, The University of Tokyo. Samples were made with different casting conditions and the residual stress of these silicon ingots were measured by mean of the neutron diffraction in the Canadian National Atomic Energy Research Institute, Chalk River, Canada. Because of the larger size of the crystal grains in the continuous cast silicon ingots, the measurement of the amount of the strai … More n was difficult with the conventional technique. New measurement technique was developed on the Canadian side, in which isotropy was given with rotating the sample while the neutron diffraction was measuring and was applied to the silicon ingot The model for the estimation of the residual stress of the silicon after continuous cast was developed on The University of Tokyo side. With this model, based on the heat conduction equation and the heat of coagulation, the analysis was done with actual process condition as the boundary condition. This result was compared with the experimental result mentioned above and discussed. In addition, for the shortening the calculation time and further establishment of general calculation technique, new version of the analytical approximation method is developing When the new version is completed, it will be possible to apply it for the online process monitoring of the manufacturing of the silicon continuous cast ingot Furthermore, a larger scale equipment were completed, that was not only the scale improvement of the smaller electron-beam equipment, but a number of improvements were made. By the large scaled electron-beam dissolution equipment, which has two electron beams generators and a large size water-cooled copper hearth, the experiments of silicon refining was performed. The experimental result was success of making 30kg class large-scale silicon ingots Less

众所周知，铸造法制造的硅锭的质量很大程度上受材料凝固后存在的残余应力的影响，但目前尚无正确的残余应力测量方法和结果评价方法。这项研究的目的是通过国际合作，通过安装在工业研究所的设备装置来详细研究残余应力的测量及其产生情况与铸造工艺之间的关系。东京大学《科学》杂志在不同的铸造条件下制作了样品。这些硅锭的残余应力是在加拿大乔克河的加拿大国家原子能研究所通过中子衍射测量的。加拿大方面开发了新的测量技术，其中在中子衍射测量的同时旋转样品给出了各向同性，并将其应用于硅锭模型。东京大学开发了用于估计连铸后硅的残余应力的模型，该模型基于热传导方程和凝固热，以实际工艺条件为边界条件进行分析。将此结果与上述实验结果进行了比较和讨论。此外，为了缩短计算时间和进一步建立通用计算技术，新版本的解析近似方法正在开发中，待新版本完成后将进行讨论。可应用于在线过程监控硅连铸锭的制造此外，还完成了更大型的设备，这不仅是小型电子束设备的规模改进，而且是由大型电子束溶解设备制造的。拥有两台电子束发生器和一台大型水冷铜炉，进行了硅精炼实验，实验结果是成功制造出30kg级大型硅锭。

项目成果

期刊论文数量（33）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

川添敏, 香川豊: "セラミック-金属接合体の自由端近傍の界面に生じる応力特異性と界面破壊挙動"日本金属学会第128回金属学会講演概要. 431 (2001)

Satoshi Kawazoe、Yutaka Kakawa：“陶瓷-金属键自由端附近界面处发生的应力奇异性和界面断裂行为”第 128 届日本金属材料学会会议摘要 431 (2001)。

DOI：
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0
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S.H.Tabaian, M.Maeda, T.Ikeda, Y.Ogasawara: "Thermodynamic Study of Molten Si-Ti Alloys"High Temperature Materials and Processes. Vol.19, Nos.3&4. 257-264 (2000)

S.H.Tabaian、M.Maeda、T.Ikeda、Y.Ogasawara：“熔融硅钛合金的热力学研究”高温材料和工艺。

DOI：
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0
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M.Maeda, T.Ikeda: "Recycling and Material Flow of the World"Polymers for Advanced Technologies, Wiley. 388-391 (2000)

M.Maeda、T.Ikeda：“世界回收和物质流”先进技术聚合物，Wiley。

DOI：
发表时间：
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0
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Recycling and Material Flow of the World

世界回收与物质流动

DOI：
发表时间：
2001
期刊：
Polymers for Advanced Technologies
影响因子：
3.4
作者：
M.Maeda;T.Ikeda
通讯作者：
T.Ikeda

The EB Purification of Silicon

硅的 EB 纯化

DOI：
发表时间：
2000
期刊：
Abstract of Electron Beam Melting and refining-state of the art 2000 millennium conference
影响因子：
0
作者：
T.Ikeda;N.Nishikawa;N.Yamauchi;K.Miyazaki;H.Hattori;Y.Shinoda
通讯作者：
Y.Shinoda