Development of next-generation photosensitive organic insulating material wit low dielectric constant and low dissipation factor

新一代低介电常数、低损耗因子光敏有机绝缘材料的开发

基本信息

批准号：
14350484
负责人：
UEDA Mitsuru
金额：
$ 9.28万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2003
项目状态：
已结题

项目摘要

1.A convenient synthesis of regiocontrolled poly(2,6-dihydroxy-1,5-naphthylene) (PDHN) with high molecular weights by oxidative coupling polymerization of 2,6-dihydroxynaphthalene has been developed. A negative working and chemically amplified photosensitive polymer based on PDHN, a cross-linker, and a photoacid generator PTMA has been developed. The resist showed a sensitivity of 8.3 mJ cm^<-2> and a contrast of 11. The optically estimated dielectric constant of the resist system in 2.88. A positive working and chemically amplified photosensitive polymer based on partially (30%) Ο-methylated poly(2,6-dihydroxy-1,5-naphthylene) [PMPDHN (30)], as an acidolytic de-cross-linker, and a photoacid generator PTMA has been developed. The resist showed a sensitivity of 19.4 mJ cm^<-2> and a contrast of 7.5. The optically estimated dielectric constants (at 1 MHz) of this resist 2.9. The moisture absorption (1.7 wt% this resist system based on PMPDHN (30) and TVEB is very low compared to that (4. … More 3%) of the resist system consisting of conventional PDHN resist system.2.A chemically amplified photosensitive and thermosetting polymer based on poly[2,6-di(3-methyl-2-butenyl)phenol(15mol%)-co-2,6-dimethylphenol(85 mol%)] and a photoacid PTMA has been developed. The average refractive index of the cured copolymer film was 1.5452, from which the dielectric constant (ε) at 1 MHz was estimated as 2.6. The resist showed a sensitivity of 35 mJ cm^<-2> and a contrast of 1.6. The glass transition temperature of this polymer is 300℃ after thermal curing. Poly[(2-allyl-6-methyl-phenol(20mol%)-co-2,6-dimethylphenol(85 mol%)] after curing also showed low ε (2.6) and low dissipation factor 0.0015-0.0019 at 1 MHz.3.A novel thermally stable and low dielectric poly(binaphthylene ether) has been developed. Polymer was easily prepared by oxidative coupling polymerization of 2,2'-bis(1-naphthyloxy)-1,1'-binaphthyl with FeCl_3 as an oxidant. The ε of polymer at 1 MHz was directly measured from the capacitance as 2.50. The modulus and hardness of polymer were determined as 9.8 GPa and 0.42 GPa. Less

1.开发了一种通过2,6-二羟基萘氧化偶联聚合方便合成高分子量区域控制聚(2,6-二羟基-1,5-亚萘基)(PDHN)的负性化学放大光敏聚合物。已开发出基于PDHN、交联剂和光酸产生剂PTMA的抗蚀剂，其灵敏度为8.3mJ cm^-2>。对比度为11。抗蚀剂系统的光学估计介电常数为2.88。基于部分(30%)O-甲基化聚(2,6-二羟基-1,5-亚萘基)的正性化学放大光敏聚合物。 [PMPDHN (30)]，作为酸解去交联剂和光致产酸剂 PTMA 已开发出来。抗蚀剂的灵敏度为 19.4。 mJ cm^-2 且该抗蚀剂的光学估计介电常数(在1MHz)为2.9。该基于PMPDHN(30)和TVEB的抗蚀剂系统的吸湿率(1.7wt％)非常低。与传统 PDHN 抗蚀剂系统组成的抗蚀剂系统相比 (4. … 更多 3%)。2.基于化学放大的光敏和热固性聚合物聚[2,6-二(3-甲基-2-丁烯基)苯酚(15mol%)-co-2,6-二甲基苯酚(85mol%)]和光酸PTMA已开发出固化物的平均折射率。共聚物膜为1.5452，由此估计1MHz下的介电常数(ε)为2.6。抗蚀剂的灵敏度为35mJ。 cm^<-2>，对比度为1.6，热固化后该聚合物的玻璃化转变温度为300℃。 (85 mol%)] 固化后还表现出低 ε (2.6) 和低损耗因数 0.0015-0.0019 在 1 MHz.3.A 新型热学以FeCl_3为氧化剂，通过2,2'-双(1-萘氧基)-1,1'-联萘的氧化偶联聚合制备了稳定、低介电的聚联萘醚。在 1 MHz 下直接从电容测得为 2.50。聚合物的模量和硬度确定为 9.8 GPa， 0.42 GPa以下