Electrochemical Maskless Metal Patterning on Silicon Using Photo-excited Carriers

使用光激发载流子在硅上进行电化学无掩模金属图案化

基本信息

批准号：
14350383
负责人：
OGATA Yukio
金额：
$ 9.22万
依托单位：
KYOTO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14350383/
关键词：
Porous silicon Photo-excitation Laser Electrodeposition Immersion plating Metal patterning パターニング

项目摘要

Position-selective metal deposition on p-type silicon was successfully performed by laser illumination in metal-salt solution under cathodic polarization. The scanning of illumination realized metal patterning on silicon without the help of photolithography. The resolution on a porous silicon surface was superior to that on a flat silicon surface. The deposited spot size was 15 μm when using a laser with the beam diameter of 5 μm.Immersion plating hinders the patterning since the whole surface of silicon receives metal deposition. Less-noble metal systems can prevent this situation, and the metal pattering was demonstrated in nickel, iron, and zinc systems. Copper is a noble metal and unfavorable for the patterning. However, it is possible if the redox potential can be shifted toward the negative direction by complexation. Copper patterning was achieved using a solution consisting of cupric chlorides instead of the use of a copper sulfate solution. In the immersion plating study, we ma … More de two new findings. First, immersion plating of nickel is possible from an alkaline nickel sulfate solution containing ammonium fluorides, and oxidation of the silicon substrate can be prevented in this process. Second, open circuit potential of silicon oscillates spontaneously and persistently during copper immersion plating.Photo-assisted copper patterning was possible also on n-type silicon by the following method. Porosification of silicon is position-selectively performed by illuminating n-type silicon in a hydrofluoric acid solution under anodic polarization, and then the patterned sample is immersed in a copper sulfate solution. Immersion plating of copper takes place only at the porous surface ; it makes the patterning possible. This patterning utilizes the different reducing abilities between silicon and porous silicon. However, metal deposition on n-type silicon showed some limitations. Only noble metals, which can be immersion-plated, are usable, and careful control of hydrofluoric acid concentration and illumination conditions are crucial. Less

在阴极偏振下，通过激光照射在金属盐溶液中成功地在 p 型硅上进行了位置选择性金属沉积，无需光刻技术即可在硅上实现金属图案化，其分辨率优于多孔硅表面。当使用光束直径为 5 μm 的激光时，在平坦的硅表面上沉积的光斑尺寸为 15 μm。由于硅的整个表面都接受金属沉积，所以浸镀阻碍了图案化。较稀有的金属体系可以防止这种情况，并且在镍、铁和锌体系中证明了金属图案化，铜是贵金属并且不利于图案化，但是，如果氧化还原电位可以向氧化还原电位移动，则这是可能的。使用由氯化铜组成的溶液而不是硫酸铜溶液来实现铜图案化。在浸镀研究中，我们获得了两个新发现。可以从含有氟化铵的碱性硫酸镍溶液中浸镀镍，并且在此过程中可以防止硅基板的氧化。其次，浸镀铜期间硅的开路电位会自发且持续地振荡。光辅助铜图案化。通过以下方法也可以在n型硅上通过在氢氟酸中照射n型硅来选择性地进行硅的多孔化。在阳极极化的溶液中，然后将图案化的样品浸入硫酸铜溶液中，仅在多孔表面进行铜的浸镀；这种图案化利用了硅和多孔硅之间的不同还原能力。 n型硅上的金属沉积显示出一些局限性，只有可浸镀的贵金属才可用，并且仔细控制氢氟酸浓度和光照条件至关重要。