Formation of honeycomb structure by ion implantation- clarification of the mechanism and its application to nano-fabrication

离子注入形成蜂窝结构-机理阐明及其在纳米加工中的应用

基本信息

批准号：
14350343
负责人：
TANIWAKI Masafumi
金额：
$ 9.41万
依托单位：
Kochi University of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2004
项目状态：
已结题

项目摘要

The following important conclusion was derived from this study.(1)A part of the Frenkel pairs induced by ion implantation are not recombined, by which the surface defect structure is formed. This was proved quasi-quantitatively.(2)As-formed cellular structure is amorphous and does not show characteristic photoluminescence.(3)The novel nano-fabrication technique using the point defects behavior was proved to be possible by focused ion beam.(4)The characteristic defect formation was searched for element semiconductors and III-V compound semiconductors, and the sponge-like structure was found in Ge besides GaSb and InSb.(5)The dependence of the cellular structure on the surface orientation and the anomalous behavior for implanted ZnO was detected.The most valuable fruit of this study is that it brought several new subjects in material science and its application for us. First this study offered a new tool for the investigation for the lattice defect in semiconductors. There is little knowledge on the point defects in semiconductors, especially compound semiconductors, which is due to the lack of proper technique for these estimation. The cellular structure, which is visible, is used for probe of vacancies and interstitials, then their formation energies and migration energies is obtained by the observation of its formation and growth. Secondly fabrication of nano-devices should be challenged, because it was shown that the proposed nano-fabrication is possible. Magnetic devices and photo devices will be realized.

（1）未重新组合由离子植入引起的弗伦克尔对的一部分，从而形成表面缺陷结构。（2）形成的细胞结构是无定形的，并且没有显示出特征性的光致发光。（3）使用点缺陷的新型纳米模式技术被聚焦离子束证明是可能的。）搜索了特征缺陷的形成，以找到元素半导体和III-V复合半导体，除了GE和INSB之外，在GE中发现了类似海绵的结构。检测到植入的ZnO。这项研究中最有价值的果实是，它带来了材料科学及其对我们的应用中的几个新主题。首先，这项研究为半导体的晶格缺陷提供了一种新工具。关于半导体的点缺陷，尤其是复合半导体的知识很少，这是由于缺乏适当的技术来进行这些估计。可见的细胞结构用于探测空缺和间质的探针，然后通过观察其形成和生长来获得它们的形成能和迁移能。其次，应挑战纳米驱动器的制造，因为这表明提出的纳米制作是可能的。将实现磁性设备和照片设备。