Electronic Phenomena at the Hetero-Nanointerface Fabricated from Self-Assembled Films and Photoelectric Conversion Devices

自组装薄膜和光电转换器件制备的异质纳米界面的电子现象

基本信息

批准号：
11450129
负责人：
ONODA Mitsuyoshi
金额：
$ 7.04万
依托单位：
Himeji Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

项目摘要

Recently, research into the practical use of organic materials in electronic devices has produced excellent results. It is considered that conducting polymers with highly extended π-electron conjugated systems in their main chains are highly promising materials for organic electronic devices. Because interfaces consisting of condicting polymer/metal or conducting polymer/conducting polymer are necessary in polymer electronic devices, the electronic phenomenon at the interface is critically important to the performance and the function of such devices. The fundamental device properties are affected by interfacial properties. Accordingly, it is necessary to understand not only the properties of the conducting polymer itself, but also interfacial electronic phenomena and electronic states on a nanometer scale.A novel thin film processing technique has been developed for the fabrication of ultrathin films of conducting polymers with molecular level control over thickness and multilayer arc … More hitecture. This new self-assebly process opens up vast possibilities in applications which require large area ultrathin films of conducting polymers and more importantly in applications that can take advantage of the unique interactions achievable in the complex, supermolecular architectures of multilayer films.Photoirradiation effects of a polypyridine, PPy/poly(2-methoxy-5-dodecylozy-p-phenylene vinylene), MDOPPV heterostructure photoelectric conversion device have been investigated. The photovoltaic characteristics of the heterostructure photoelectric conversion device are considerably improved from those in single-layer photoelectric conversion device are considerably improved from those in single-layer photoelectric conversion devices. Quenching of photoluminescence both in the PPy layer film and in the MDOPPV layer film has also been observed in the PPy/MDOPPY heterostructure film. The observed photoirrsdiation effects of the heterostructure device indicate that a photoinduced charge transfer occurs between PPy and MDOPPV. However, the photoinduced charge transfer between these polymers cannot be explained by the bulk electronic energy states of the polymers. A possible mechanism, which takes modulation of electronic energy states at the interface due to a local lattice distortion into account, has been proposed.The electronic state at the conducting polymer/electrode interface in air was investigated. The Fermi level (E_F) as well as the ionization potential (Ip) at the surface of conducting polymer films coated on various substrates was observed as a function of film thickness. The E_f of the conducting polymer surface was estimated by Kelvin probe method, and the Ip was estimated by atmospheric photoelectron spectroscopy. When Al was used as the electrode material, the dependence of the EF on film thickness was much different from that of the Ip. Less

最近，对电子设备中有机材料实际使用的研究产生了出色的结果。据认为，在其主链中具有高度扩展的π电子共轭系统的导电聚合物是有机电子设备的高度有前途的材料。由于在聚合物电子设备中必须使用由预期聚合物/金属或导电聚合物/导电聚合物组成的接口，因此界面处的电子现象对此类设备的性能和功能至关重要。基本设备的性质受界面特性的影响。彼此之间，不仅有必要理解导电聚合物本身的性能，而且还必须在纳米尺度上了解界面电子现象和电子状态。一种新型的薄膜加工技术是为制造具有分子水平控制厚度和多层级别ARC的分子水平控制的超薄膜的超薄薄膜制造的新型薄膜加工技术。这一新的自组装过程在应用中需要大量的超层膜的指导聚合物的薄膜，更重要的是，在可以利用可以利用多层膜的复杂的超分子体系结构中可以实现的独特相互作用的应用中，更重要的是MDOPPV异质结构光电转换设备已被研究。从单层光电转换装置中，异质结构光电转换设备的光伏特性被认为是从单层光电转换设备中进行了清楚改进的。在PPY层膜和MDOPPV层膜中，光致发光的淬灭也已在PPY/MDOPPY异质结构膜中观察到。观察到的异质结构装置的光rsDiation效应表明，光诱导的电荷转移发生在PPY和MDOPPV之间。但是，这些聚合物之间的光诱导的电荷转移不能用聚合物的整体电子能状态来解释。已经提出了一种可能的机制，该机制已考虑到局部晶格失真，对界面处的电子能状态进行调节。研究了空气中的电导聚合物/电极界面处的电子状态。 Fermi水平（E_F）以及在各种底物上涂在各种底物上的聚合物膜表面的电离电位（IP）作为膜厚度的函数。通过开尔文探针法估计导电聚合物表面的E_F，并通过大气光电子光谱估算IP。当Al用作电极材料时，EF对膜厚度的依赖性与IP的依赖性大不相同。较少的