Electronic Phenomena at the Hetero-Nanointerface Fabricated from Self-Assembled Films and Photoelectric Conversion Devices

自组装薄膜和光电转换器件制备的异质纳米界面的电子现象

基本信息

批准号：
11450129
负责人：
ONODA Mitsuyoshi
金额：
$ 7.04万
依托单位：
Himeji Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

项目摘要

Recently, research into the practical use of organic materials in electronic devices has produced excellent results. It is considered that conducting polymers with highly extended π-electron conjugated systems in their main chains are highly promising materials for organic electronic devices. Because interfaces consisting of condicting polymer/metal or conducting polymer/conducting polymer are necessary in polymer electronic devices, the electronic phenomenon at the interface is critically important to the performance and the function of such devices. The fundamental device properties are affected by interfacial properties. Accordingly, it is necessary to understand not only the properties of the conducting polymer itself, but also interfacial electronic phenomena and electronic states on a nanometer scale.A novel thin film processing technique has been developed for the fabrication of ultrathin films of conducting polymers with molecular level control over thickness and multilayer arc … More hitecture. This new self-assebly process opens up vast possibilities in applications which require large area ultrathin films of conducting polymers and more importantly in applications that can take advantage of the unique interactions achievable in the complex, supermolecular architectures of multilayer films.Photoirradiation effects of a polypyridine, PPy/poly(2-methoxy-5-dodecylozy-p-phenylene vinylene), MDOPPV heterostructure photoelectric conversion device have been investigated. The photovoltaic characteristics of the heterostructure photoelectric conversion device are considerably improved from those in single-layer photoelectric conversion device are considerably improved from those in single-layer photoelectric conversion devices. Quenching of photoluminescence both in the PPy layer film and in the MDOPPV layer film has also been observed in the PPy/MDOPPY heterostructure film. The observed photoirrsdiation effects of the heterostructure device indicate that a photoinduced charge transfer occurs between PPy and MDOPPV. However, the photoinduced charge transfer between these polymers cannot be explained by the bulk electronic energy states of the polymers. A possible mechanism, which takes modulation of electronic energy states at the interface due to a local lattice distortion into account, has been proposed.The electronic state at the conducting polymer/electrode interface in air was investigated. The Fermi level (E_F) as well as the ionization potential (Ip) at the surface of conducting polymer films coated on various substrates was observed as a function of film thickness. The E_f of the conducting polymer surface was estimated by Kelvin probe method, and the Ip was estimated by atmospheric photoelectron spectroscopy. When Al was used as the electrode material, the dependence of the EF on film thickness was much different from that of the Ip. Less

近年来，有机材料在电子器件中的实际应用研究取得了良好的成果，主链上具有高度延伸的π电子共轭体系的导电聚合物由于由导电界面组成而被认为是非常有前途的有机电子器件材料。聚合物/金属或导电聚合物/导电聚合物是聚合物电子器件中所必需的，界面处的电子现象对于此类器件的性能和功能至关重要，因此，界面特性影响着器件的基本性能。理解不不仅包括导电聚合物本身的特性，还包括纳米尺度上的界面电子现象和电子态。已经开发出一种新型薄膜加工技术，用于制造导电聚合物超薄膜，并具有分子水平控制厚度和多层电弧……这种新的自组装工艺在需要大面积超薄膜导电聚合物的应用中开辟了巨大的可能性，更重要的是在可以利用复杂的超分子结构中可实现的独特相互作用的应用中。研究了聚吡啶、PPy/聚(2-甲氧基-5-十二烷基-对亚苯基亚乙烯基)、MDOPPV异质结构光电转换器件的光辐照效应，异质结构光电转换器件的光电特性得到了显着改善。与单层光电转换器件中的光致发光猝灭相比，PPy层膜和单层光电转换器件中的光致发光猝灭都有很大改善。在 PPy/MDOPPY 异质结构薄膜中也观察到了 MDOPPV 层膜。观察到的异质结构器件的光照射效应表明，PPy 和 MDOPPV 之间发生了光致电荷转移，但这些聚合物之间的光致电荷转移无法用本体来解释。已经提出了一种可能的机制，该机制考虑了由于局部晶格畸变而导致的界面电子能态的调制。导电时的电子态。研究了空气中聚合物/电极界面的费米能级 (E_F) 以及涂覆在各种基底上的导电聚合物薄膜表面的电离势 (Ip) 作为薄膜厚度的函数。当使用Al作为电极材料时，EF对膜厚的依赖性与Ip Less有很大不同。