Thin Film Growth around Misfit Dislocations

错位位错周围的薄膜生长

• 批准号: 11450005
• 负责人: HIRAYAMA Hiroyuki
• 金额: $ 8.06万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B).
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450005/
• 关键词: Silicon; Germanium; Molecular Beam Epitaxy; Scanning Tunneling Microscope; Step Morphology; Surface Stress; Misfit Dislocation; 分子線エピタキシー; Misfit転位; MBE; STM; Si; Ge

Si/Ge hetero-structure has been paid much attention in Si-based two-dimensional confinement of electrons and holes, and also in self assembling of quantum dots recently. A key of these applications is the control of the growth mode at the strained hetero-interfaces. However, a detail of the Si layers growth on the Si_<1-x>Ge_x (001 ) surface is still not well investigated. Here, we report our study on the growth of Si layers on Si_<1-x>Ge_x/Si (001) surfaces using STM.First, we observed the surface morphology of the Si_<1-x>Ge_x (001) layers of various thickness grown on the Si (001) substrates. The surface of the 0.46nm thick Sil-xGex layer include many dimer vacancies in the 2x1 reconstruction. However, the step density was small enough to keep the surface flat as the Si (001) substrate. Increasing the thickness, the dimer vacancies aligned to lines to release the compressive strain on the Si_<1-x>Ge_x (001) surface. The distance between dimer vacancy lines reduced to 8a (a is the su … More rface unit cell length) on the Si_<1-x>Ge_x layer of 1.38nm thickness.On the surface with dimer vacancy lines, small terraces stacked to make the surface uneven. SA step tended to be rough while SB step became straight in contrast to the Si (001) 2x1 surface. At the surface of the Sil-xGex layer with the thickness over 2nm, pyramidal 3D islands with (105) facets were observed to nucleate.In Si deposition, the dimer vacancies disappeared and many small terraces appeared in the initial stage on the Si_<1-x>Ge_x (001) layer of 0.46nm thickness. The terrace size became larger and the surface recovered smoothness in further deposition of Si. On the Si_<1-x>Ge_x (001) layer of 1.38nm thickness, patchy small terraces disappeared and the surface became smoother in the Si deposition. But, the dimer vacancy lines still persisted for the Si coverage up to 1nm, probably due to the segregation of Ge. In the conference, more details of the morphological change on the Si layers grown on the Si_<1-x>Ge_x (001) surface will be presented, and will be discussed from the viewpoints of the accumulation and release of stain and Ge out-diffusion on the growth front. Less

Si/ge杂种结构在基于SI的电子和孔的二维限制中引起了极大的关注，最近在量子点的自我组装中也引起了人们的关注。这些应用程序的关键是在紧张的异质间隙处的生长模式控制。但是，SI层的细节si_ <1x> ge_x（001）表面仍未得到很好的研究。在这里，我们报告了SI_ <1-X> ge_x/si（001）表面上Si层生长的研究，我们使用Stm.First，观察到SI_ <1-x> ge_x（001）层的表面形态在SI（001）基础上生长的各种厚度。 0.46nm厚的SIL-XGEX层的表面在2x1重建中包括许多二聚体空位。但是，台阶密度足够小，可以使表面保持平整为Si（001）底物。增加了厚度，二聚体空位与线路对齐以释放Si_ <1-X> ge_x（001）表面上的压缩应变。二聚体空位线之间的距离降低至8A（A是SU…更多的rface单位单元长），厚度为1.38nm的Si_ <1-X> GE_X层。在带有二聚体空置线的表面上，小露台堆叠以使表面不平坦。 SA步骤趋于粗糙，而SB步骤与Si（001）2x1表面形成鲜明对比。在厚度超过2nm的Sil-XGEX层的表面上，观察到具有（105）个刻面的锥体3D岛为核。在SI沉积中，二聚体空位消失了，许多小露台出现在SI__ <1-x> ge_x（001）层的0.46nm厚度的初始阶段。露台尺寸变大，表面在进一步沉积Si时恢复了光滑度。在厚度为1.38nm的si_ <1-x> ge_x（001）层上，斑点的小露台消失了，在SI沉积中表面变得光滑。但是，二聚体空位线仍然持续到1NM的SI覆盖范围，这可能是由于GE的隔离。在会议上，将提供有关Si_ <1-X> ge_x（001）表面上SI层上形态学变化的更多细节，并将从污渍和GE Out-Diffusion在生长方面的积累和释放的观点进行讨论。较少的

项目成果

H.Hirayama et al.: "Nucleation of Ag nanodots at the Si(III)3X1-Ag surfaces"Surface Science. (印刷中). (2001)

H. Hirayama 等人：“Si(III)3X1-Ag 表面的 Ag 纳米点的成核”《表面科学》（出版中）。

H.Hirayama et al: "Chain-left isomer of the π-borded chain reconstruction at the Ge(III)2X1"Physical Review. B62. 6900-6903 (2000)

H. Hirayama 等人：“Ge(III)2X1 的 π 边界链重建的链左异构体”物理评论 B62 (2000)。

H.Hirayama et al: "Optical Second Harmonic Generation Spectrum of Ag/Si (111) Reconstructed Surfaces"Physical Review. B63 (in press).

H.Hirayama 等人：“Ag/Si (111) 重构表面的光学二次谐波产生谱”物理评论。

H.Hirayama et al.: "Optical Second Harmonic Generation Spectrum of Ag/Si(III) reconstructer surfaces"Physical Review. B63(印刷中). (2001)

H. Hirayama 等人：“Ag/Si(III) 重建器表面的光学二次谐波生成谱”物理评论 B63（出版中）。

H.Hirayama et al: "Chain-left isomer of the π-bonded chain Reconstruction at the Ge {111} 2x1"Physical Review. B62. 6900-6903 (2000)

H. Hirayama 等人：“Ge {111} 2x1 处 π 键合链的左链异构体重建”物理评论 B62（2000 年）。