Study on Enhancement of Non-Phonon Excitonic Luminescence by using Inhomogeneous strain fields

非均匀应变场增强非声子激子发光的研究

• 批准号: 11450002
• 负责人: SHIRAKI Yasuhiro
• 金额: $ 6.08万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450002/
• 关键词: SiGe; strain field; exciton; Optelectronics; Quantum dot; island growth; 不均一歪み場; 微小共振器; 自己形成Geドット; 間接遷移型半導体; 無フォノン発光; DBR; 励起子分子; 量子井戸; 局在

In this work, we have investigated on the growth characteristics and the optical properties of the Ge islands grown on Si substrates. For the Ge-island growth, the most significant issues are increasing of the density of Ge islands and ordering of the size of the Ge islands. On these issues, we have tried two approaches. First, we have utilized staked Ge islands layers with thin Si spacer layers, which leads to. correlation of the each Ge islands layer resulting in the ordering of the size of the Ge islands. Second, we have utilize a lower-temperature grown Ge islands layers, on which higher-temperature grown Ge island layers are stacked via thin Si spacer layers, resulting in drastic size reduction of the Ge islands even at high growth temperature. In 2001, we have investigated on SiGe/Si distributed Bragg mirrors (DBRs) to enhance luminescence of SiGe quantum structures and successfully fabricated DBRs with a record reflectivity (>90 %). We have also fabricated a microcavity by using SiGe/Si DBRs, by which luminescence from SiGe/Si quantum wells and Ge islands drastically modulated. The directionality of the luminescence is also improved by the effect of microcavity.

在这项工作中，我们研究了在硅衬底上生长的Ge岛的生长特性和光学性质。对于葛岛的生长来说，最重要的问题是葛岛密度的增加和葛岛大小的有序化。在这些问题上，我们尝试了两种方法。首先，我们利用了具有薄硅间隔层的堆叠Ge岛层，从而导致。每个Ge岛层的相关性导致Ge岛的大小排序。其次，我们利用较低温度生长的Ge岛层，在其上通过薄Si间隔层堆叠较高温度生长的Ge岛层，从而即使在高生长温度下也能大幅减小Ge岛的尺寸。 2001年，我们研究了SiGe/Si分布式布拉格镜（DBR）以增强SiGe量子结构的发光，并成功制造了具有创纪录反射率（>90%）的DBR。我们还使用 SiGe/Si DBR 制造了一个微腔，通过该微腔，来自 SiGe/Si 量子阱和 Ge 岛的发光得到了极大的调制。微腔效应也改善了发光的方向性。

项目成果

Usami N, Miura M, Ito Y, Araki Y, Shiraki Y: "Drastic increase of the density of Ge islands by capping with a thin Si layer"Appl. Phys. Lett.. 77. 217-219 (2000)

Usami N、Miura M、Ito Y、Araki Y、Shiraki Y：“通过覆盖薄硅层，大幅增加 Ge 岛的密度”

N, Usami, M. Miura, Y, Ito, Y. Araki, K. Nakajima, and Y. Shiraki: "Modification of the growth mode of Ge on Si(100) in the presence of buried Ge islands"J. Cryst. Growth. 227. 782-785 (2001)

N、Usami、M. Miura、Y、Ito、Y. Araki、K. Nakajima 和 Y. Shiraki：“在存在埋藏 Ge 岛的情况下，Ge 在 Si(100) 上生长模式的修改”J。

K.Kawaguchi: "Fabrication of strain-balanced Si/Si1-xGex multiple quantum well on Si1-yGey virtual substrates and their optical properties"Applied Physics Letters. (発表予定).

K. Kawaguchi：“Si1-yGey 虚拟基板上应变平衡 Si/Si1-xGex 多量子阱的制造及其光学特性”《应用物理快报》（即将发表）。

K.Kawaguchi: "Fabrication of strain-balanced Si0.73Ge0.27/Si distributed Bragg reflectors on Si substrates"Applied Physics Letters. (発表予定).

K. Kawaguchi：“Si0.73Ge0.27/Si 分布式布拉格反射器在 Si 衬底上的制造”《应用物理快报》（即将发表）。

K.Arimoto: "Effect of the insertion of an ultrathin AIP layer on the optical properties of GaAsP/GaP quantum wells"Phys,Rev.B. 60. 13735-13739 (1999)

K.Arimoto：“插入超薄 AIP 层对 GaAsP/GaP 量子阱光学特性的影响”Phys，Rev.B。