High-Efficiency Nitride-based Power Devices in the Next Generation

下一代高效氮化物功率器件

基本信息

批准号：
18206036
负责人：
AMANO Hiroshi
金额：
$ 26.29万
依托单位：
Meijo University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2006
资助国家：
日本
起止时间：
2006 至 2007
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-18206036/
关键词：
p-GaN gate Normally off FET group III nitride High power switching High breakdown voltage Junction hetero FET GaN AIN SiC FET エンハンスメントモードオン抵抗オフ電流

项目摘要

Objective of this program is to prove that the group III nitride is one of the most suitable materials for the fabrication of high power FET in the next generation. In FY2006, 1. Reduction of on resistance and improvement of the mutual conductance by surface passivation, 2. Small sub-threshold swing and low power loss in inverter circuit, 3. Controllability of the threshold voltage by changing barrier composition and thickness, and 4. Difference of the mobility underneath the gate-source and the gate were clarified. In order to realize high power devices, AN substrate is very promising because of the small lattice mismatch and the extremely high resistance. Therefore, in this program, 5. Growth of AIN substrate by sublimation on the 6H-SiC substrate, and 6. Growth of high quality AIN template on a sapphire substrate by high temperature MOVPE was conducted. Several papers were published for this issue.In FY2007, relationship between thickness of SiN passivation film and the maximum drain current was found. By optimizing the SIN thickness to be 5 nm, the following performance can be successfully observed in the normally off JHFET; Maximum drain current density: 1.58×10^<-1> [A/mm], leakage current: 1.45×10^<-8> [A/mm], on/off ratio: higher than 7 orders of magnitude, sub-threshold swing: 90 [mV/dec.], on resistance: 3.4 [mΩcm^2]. In addition, breakdown voltage was as high as 325 V, which is sufficient for inverter circuits for small size air conditioner.

该计划的目的是证明III族氮化物是2006财年最适合制造下一代高功率FET的材料之一，1.通过表面钝化降低导通电阻并提高互导， 2. 反相器电路中亚阈值摆幅小，功耗低； 3. 通过改变势垒成分和厚度来控制阈值电压； 4. 栅源下方迁移率的差异为了实现高功率器件，AN衬底由于晶格失配小且电阻极高，因此在本方案中，5.通过在6H-SiC上升华生长AIN衬底。 6.通过高温MOVPE在蓝宝石衬底上生长高质量AIN模板。本期发表了几篇论文。2007财年，SiN钝化层厚度之间的关系。通过将SIN厚度优化为5nm，可以在常关型JHFET中成功观察到以下性能：最大漏极电流密度：1.58×10^<-1>[A/mm]。，漏电流：1.45×10^<-8> [A/mm]，开/关比：高于7个数量级，亚阈值摆幅：90 [mV/dec.]，导通电阻：3.4[mΩcm^2] 另外，击穿电压高达325V，足以满足小型空调的变频电路的要求。

项目成果

期刊论文数量（37）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Epitaxial lateral overgrowth of A1N on trench-patterned AlN layers

AlN 在沟槽图案 AlN 层上的外延横向过度生长

DOI：
发表时间：
2007
期刊：
Journal of Crystal Growth 298
影响因子：
0
作者：
M. Imura;K. Nakano;G. Narita;N. Fujimoto;N. Okada,. K. Balakrishnan;M. Iwaya;S. Kamiyama;H. Amano;I. Akasaki;T. Noro T. Takagi;A. Bandoh
通讯作者：
A. Bandoh

Low-leakage-current enhancement-mode AIGaN/GaN heterostructure field-effect transistor using p-type gate contact

采用 p 型栅极接触的低漏电流增强型 AIGaN/GaN 异质结构场效应晶体管