Study on spin injection solid state magnetic memories

自旋注入固态磁存储器的研究

• 批准号: 16206031
• 负责人: TSUNASHIMA Shigeru
• 金额: $ 31.7万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16206031/
• 关键词: microfabrication; electron beam lithography; thermomagnetic recording; spin injection; amorphous alloy; etching method; Joule heating; critical current; リフトオフ法

In order to develop high speed, non-volatile, and thermally stable solid-state memory, this research studied thermal writing and spin injection writing on micro-fabricated amorphous magnetic thin films.TbFe amorphous thin films having a large perpendicular magnetic anisotropy and moderate Curie temperature were micro-fabricated by using electron beam lithography technique. In this study, thermomagnetic writing was performed by flowing current pulses into the micro-fabricated TbFe narrow path under a static magnetic field of 100 Oe. The successful writing on TbFe with a lateral size of 0.5 x 0.5 μm^2 was confirmed after the application of the current pulse of 0.14 mW and 100 nsec. The critical current density for the successful writing was increased with decreasing pulse duration, and the dependence on the pulse duration was reproduced by the numerical thermal simulation.It is necessary to exhibit high tunnel magneto-resistance (TMR) ratio in TbFe based magnetic tunnel junctions to utilize the TbFe memory layer as an element of the magnetic random access memory. We, therefore, tried to fabricate magnetic tunneling junctions having the structure of TbFe (20 nm) / CoFe (tnm) / Al-0 (1.6 nm) / CoFe (t nm) / TbFe (20 nm). By inserting thin CoFe layers at t = 1 nm, large TMR ratio of 12% was confirmed. Further improvement of the TMR ratio is expected by optimizing the deposition condition and the structure of the junction.

为了发展高速和热稳定的固体研究热写入和在m icro型无定形无定形薄膜上的自旋皮肤。在这项研究中，在100 OE的静态磁场下，将电流ULS流入微型TBFE的狭窄路径中，在TBFE上进行了0.5 x0.5μm^2电流的脉冲为0.14 MW和100 NSEC。基于TBFE的磁力连接的比率是使用TB作为磁性随机存储器的元素。 -0（1.6 nm） / cofe（TBFE（20 nm）。通过在t = 1 nm处插入三层cofe层，确认了12％的较大TMR比。预计TMR比的进一步改善可以通过优化沉积条件和优化状态。结构的结构。

项目成果

Thickness Dependence of Exchange Anisotropy for (001) Oriented Mn_<89>Pt_<11>/NiFe Bilayers

(001) 取向 Mn_<89>Pt_<11>/NiFe 双层交换各向异性的厚度依赖性

• 发表时间: 2007
• 期刊: J. Magn. Magn. Mat. 310・2-3
• 作者: D.Hippo;K.Urakawa;Y.Kawata;Y.Tsuchiya;H.Mizuta;N Koshida;S.Oda;K. Yamane;H.Yamaguchi;T.Kume et al.
• 通讯作者: T.Kume et al.

STM observation and magnetic anisotropy of MBE-Grown Fe/Pt superlattices with (111) and (001) orientations

(111) 和 (001) 取向 MBE 生长的 Fe/Pt 超晶格的 STM 观察和磁各向异性

• 发表时间: 2004
• 期刊: IEEE Trans.Magn. 95・11
• 作者: M.Takahashi;M.Tonouchi;S.Yamamoto
• 通讯作者: S.Yamamoto

Exchange anisotropy of (001) oriented Mn_<80>Ir_<20>/NiFe epitaxial bilayers

(001)取向Mn_<80>Ir_<20>/NiFe外延双层的交换各向异性

• 发表时间: 2004
• 期刊: J.Magn.Magn.Mat. 286
• 作者: I.A.Halin;S.Kawahito;T.Kume
• 通讯作者: T.Kume

固体メモリ装置

固态存储设备

• 发表时间: 2004

Simulation of thermomagnetic recording process using MFM method : effect of field gradient (Invited)

使用MFM方法模拟热磁记录过程：场梯度的影响（特邀）

• 发表时间: 2004
• 期刊: Trans. Magn. Soc. Jpn 4-2
• 作者: K. Kajikawa;K. Tomachi;N. Maema;M. Matsuo;S. Sato;K. Funaki;H. Kumakura;K. Tanaka;M. Okada;K. Nakamichi;Y. Kihara;T. Kamiya;I. Aoki;T.Kato et al.
• 通讯作者: T.Kato et al.