Al concentration dependent oxidation behavior of Ti1-yAlyB2 and Ti1-xAlxN coatings

Ti1-yAlyB2 和 Ti1-xAlxN 涂层的 Al 浓度依赖性氧化行为

• 批准号: 449548449
• 负责人: Professor Jochen M. Schneider, Ph.D.
• 金额: --
• 依托单位: Lehrstuhl für Werkstoffchemie (MCh)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/449548449?language=en
• 关键词: Al; concentration; dependent; oxidation; behavior

We have demonstrated the synthesis for single phase V1-xAlxN coatings with unprecedented Al concentrations of up to x = 0.75. This supersaturation was obtained by separating the film-forming species in time and energy domains through synchronization of the pulsed substrate bias with intense periodic fluxes of energetic Al ions during reactive hybrid high power pulsed magnetron sputtering. Here, we will utilize massive Al ion fluxes [*] for the first time during synthesis of Ti1-xAlxN and Ti1-yAlyB2 coatings with maximized Al concentrations (ymax , xmax) following the subplantation approach conceived by G. Greczynski and the applicant. In addition to the two films with maximized Al concentration, also films with a 5 at.% and 10 at.% lower Al concentration than the respective maximum concentration will be grown and evaluated for both material systems. The oxidation behavior of all six compositions will be evaluated at temperatures of up to 1000 °C and exposure times of up to 60 min in a furnace and by differential scanning calorimetry. [*] Massive ion fluxes are enabled by recent developments in power supply design allowing for 1000 A max current compared to the previously employed 500 A maximum current rating.

我们已经证明了单相 V1-xAlxN 涂层的合成，其 Al 浓度高达 x = 0.75，这种过饱和是通过脉冲基底偏压与强周期性通量的同步在时间和能量域中分离成膜物质来获得的。在这里，我们将在 Ti1-xAlxN 和 Ti1-xAlxN 的合成过程中首次利用大量的 Al 离子通量 [*]。 Ti1-yAlyB2 涂层具有最大的 Al 浓度（ymax、xmax），遵循 G. Greczynski 和申请人设想的次植方法。除了具有最大 Al 浓度的两个薄膜之外，还有具有 5 at.% 和 10 at.% 的薄膜。低于各自最大浓度的Al将在两种材料系统中生长和评估。所有六种成分的氧化浓度行为将在高达1000°C的温度和长达1000°C的暴露时间下进行评估。通过差示扫描量热法在炉中持续 60 分钟 [*] 电源设计的最新发展使最大离子通量达到 1000 A，而之前采用的最大额定电流为 500 A。