Surface Analysisi under Air by UV Photoelectron Yield Spectroscopy

空气下紫外光电子产率光谱分析

• 批准号: 04640552
• 负责人: MONJUSHIRO Hideaki
• 金额: $ 1.28万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04640552/
• 关键词: Photoelectron Emission; Work Function; Surface Anlysis; chemical Modification; Semiconductors

Ultraviolet photoelectron Yield spectroscopy (UPYS) is a new tool to investigate the surface property of the solid sampke under air atmosphere. In this study, the UPY spectra of semiconducters and surface modified gold metal were measured and andlyzed to elucidate the ability of this techniquw as surface analytical technique in air.The photoelectron threshold energy, Et of the various types of silicon wafers were determined form the UPY spectra. The Et and photoelectron Yield, Y reflect the nature of the surface electronic band structre and are sensitive to the type of the inpurity and its concentration. It is also indicated that the (111) and (100) faces of the silicon wafers can be easily distinguished by the use of derivative of th eUPY spectra.The escape depth of th every low energy electrons in hydrocarbon layr was determined to be about 11A by measuring the UPY spectra of alkane thiol modified gold metals. This value is vomparable or smaller than that for photoelectron neasured in XPS, indicating that the UPYS is very sensitive to the suface of the sample. The Et for the functinally modified gold metal reflects the dipole amplitude and its orientation of the surface functional group.

紫外光电子产额光谱（UPYS）是研究空气气氛下固体样品表面性质的新工具。在本研究中，测量并分析了半导体和表面改性金金属的 UPY 光谱，以阐明该技术作为空气中表面分析技术的能力。通过 UPY 测定了各种类型硅片的光电子阈值能量 Et光谱。 Et 和光电子产额 Y 反映了表面电子能带结构的性质，并且对杂质的类型及其浓度敏感。还表明利用eUPY谱的导数可以很容易地区分硅片的(111)面和(100)面。确定烃层中每个低能电子的逃逸深度约为11A通过测量烷硫醇修饰的金金属的 UPY 光谱。该值与 XPS 中测量的光电子值相当或较小，表明 UPYS 对样品表面非常敏感。功能修饰金金属的Et反映了表面官能团的偶极振幅及其取向。

项目成果

Shigemi Kohiki: "Ultraviolet Photoelectron Yield Spectroscopy of Chalcopyrite Structure Cu-In-Se Thin Films." Thin Solid Films. 238. 195-198 (1994)

Shigemi Kohiki：“黄铜矿结构 Cu-In-Se 薄膜的紫外光电子产率光谱。”

Shigemi Hohoki: "UV Photoelectron Yield Spectroscopy of Chalcopyrite Structure Cu-In-Se Thin Films" Thin Solid Films. vol.238. 195-198 (1994)

Shigemi Hohoki：“黄铜矿结构 Cu-In-Se 薄膜的紫外光电子产率光谱”固体薄膜。

Shigemi Kohiki: "UV Photoelectron Yield Spectroscopy of Chalcopyrite Structure Cu-In-Se Thin Films." Thin Solid Films. 238. 195-198 (1994)

Shigemi Kohiki：“黄铜矿结构 Cu-In-Se 薄膜的紫外光电子产率光谱。”