Physical Properties of a new Low-dimensional Conductor HfTes

新型低维导体 HfTes 的物理特性

• 批准号: 57460020
• 负责人: MATSUURA Etsuyuki
• 金额: $ 5.06万
• 依托单位: University of Tsukuba
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1982
• 资助国家: 日本
• 起止时间: 1982 至 1988
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-57460020/
• 关键词: Low-dimensional Conductor; Pulsed high-magnetic field; Shubnikov-de Haas effect; Fermi surface; 低温X線構造解析(17K)

The transition-metal pentatellurides ZrTe_5 and HfTe_5 have been attracting the interest in the field of low-dimensional conductors. We found out a strong electrical resistivity peak around 70 K in HfTe_5 for the first time and we also obtained a clue to synthesize single crystals of impurity-free HfTe_5. The purpose of this research project is to study its fruitful physical properties as far as possible by various experiments and to clarify the origin of the resistivity peak in HfTe_5.[1982-1983] with respect to the origin of the resistivity peak, the measurements of magnetoresistance, Hall coefficient and resistance under the pulsed magnetic field up to 42 T have been intensively done together with magnetization study below the temperature of the resistivity peak. As the result the long cigarette shaped ellipsoidal Fermi surfaces of HfTe_5 and ZrTe_5 were determined by the observed Shubnikov-de Haas oscillation. The anisotropic conductivity was explained semi-quantitatively by using the obtained transport parameters.[1984-1986] On the other hand we have performed the intensive study of single crystal X-ray diffraction down to 7 K by using four-circle X-ray diffractometer. Especially, the determination of the crystal structure of HfTe_5 at 17 K was carried out and its result was compared with the crystal structure at room temperature. In the present X-ray study, no remarkable lattice displacement was observed in HfTe_5 between 17 K and room temperature.

过渡金属五角肽ZRTE_5和HFTE_5一直在吸引对低维导体领域的兴趣。我们第一次发现了HFTE_5中70 K附近70 K的强电阻率峰，我们还获得了合成无杂质HFTE_5的单晶的线索。该研究项目的目的是通过各种实验来研究其富有成果的物理特性，并阐明HFTE_5中电阻率峰的起源。[1982-1983]就电阻率峰的起源而言，测量值在脉冲磁场下，磁力固定，霍尔系数和电阻最高42吨，在电阻率峰的温度下进行了磁化研究，并与磁化研究一起完成。结果，Hfte_5和Zrte_5的长香烟形状的椭圆形纤毛表面由观察到的Shubnikov-de Haas振荡确定。通过使用获得的传输参数对各向异性电导率进行半高量解释。[1984-1986]，另一方面，我们通过使用四圈X射线衍射仪对单晶X射线衍射量降低到7 K进行了深入研究。 。特别是，在17 K时测定了HFTE_5的晶体结构，并将其结果与室温下的晶体结构进行了比较。在目前的X射线研究中，HFTE_5在17 K和室温之间未观察到明显的晶格位移。

项目成果

Physica B. 117&118. (1983)

物理学B.117

J. Phys. C:Solid State Phys.20. (1987)

J. Phys。

J.Phys.C:Solid State Physics,. 20巻. (1987)

J.Phys.C：固体物理学，第 20 卷。（1987 年）

Solid State Commun.42. (1982)

固态通讯42。

Solid State Commun.第42巻. (1982)

固态通讯。第 42 卷。(1982)